171 |
A study of HfO₂-based MOSCAPs and MOSFETs on III-V substrates with a thin germanium interfacial passivation layerKim, Hyoung-sub, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.
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172 |
Schrödinger equation Monte Carlo-3D for simulation of nanoscale MOSFETsLiu, Keng-ming. January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.
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173 |
The mechanism of the flatband voltage shift by capping a thin layer of Me₂O₃ (Me=Gd, Y and Dy) on SiO₂ and HfO₂-based dielectricsZhang, Manhong, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.
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174 |
A high power DC motor controller for an electrical race car using power MOSFETSWelchko, Brian A. January 1996 (has links)
Thesis (M.S.)--Ohio University, November, 1996. / Title from PDF t.p.
|
175 |
Modeling of the dual-gate GaAs MESFET /Ibrahim, Mostafa M. January 1900 (has links)
Thesis (Ph. D.)--Carleton University, 2003. / Includes bibliographical references (p. 162-169). Also available in electronic format on the Internet.
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176 |
Total ionizing dose mitigation by means of reconfigurable FPGA computing /Smith, Farouk. January 2007 (has links)
Dissertation (PhD)--University of Stellenbosch, 2007. / Bibliography. Also available via the Internet.
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177 |
Intelligent gate drive for high power MOSFETs and IGBTsChen, Lihua. January 2008 (has links)
Thesis (Ph. D.)--Michigan State University. Dept. of Electrical and Computer Engineering, 2008. / Title from PDF t.p. (viewed on July 23, 2009) Includes bibliographical references (p. 243-252). Also issued in print.
|
178 |
Large signal electro-thermal LDMOSFET modeling and the thermal memory effects in RF power amplifiersDai, Wenhua, January 2004 (has links)
Thesis (Ph. D.)--Ohio State University, 2004. / Title from first page of PDF file. Document formatted into pages; contains xix, 156 p.; also includes graphics (some col.). Includes bibliographical references (p. 152-156).
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179 |
A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodesKang, Changseok, Lee, Jack Chung-Yeung, January 2004 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Jack C. Lee. Vita. Includes bibliographical references. Also available from UMI.
|
180 |
A study of the performance and reliability characteristics of HfO₂ MOSFET's with polysilicon gate electrodesOnishi, Katsunori. January 2002 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.
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