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131	Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors Pratapgarhwala, Mustansir M. 23 November 2005 (has links) Transistor mismatch is a crucial design issue in high precision analog circuits, and is investigated here for the first time in SiGe HBTs. The goal of this work is to study the effects of mismatch under extreme conditions including radiation, high temperature, and low temperature. One portion of this work reports collector current mismatch data as a function of emitter geometry both before and after 63 MeV proton exposure for first-generation SiGe HBTs with a peak cut-off frequency of 60 GHz. However, minimal changes in device-to-device mismatch after radiation exposure were experienced. Another part of the study involved measuring similar devices at different temperatures ranging from 298K to 377K. As a general trend, it was observed that device-to-device mismatch improved with increasing temperature. Mismatch SiGe Radiation Temperature Silicon Bipolar transistors
132	Enhanced hot-hole degradation and negative bias temperature instability (NBTI) in p⁺-poly PMOSFETs with oxynitride gate dielectrics / Chen, Yuh-yue, January 2000 (has links) Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 158-172). Available also in a digital version from Dissertation Abstracts.
133	Strain effects on the valence band of silicon piezoresistance in p-type silicon and mobility enhancement in strained silicon pMOSFET / Wu, Kehuey. January 2005 (has links) Thesis (Ph. D.)--University of Florida, 2005. / Title from title page of source document. Document formatted into pages; contains 157 pages. Includes vita. Includes bibliographical references.
134	High-k gate dielectric for 100 nm MOSFET application / Jeon, Yongjoo. January 2000 (has links) Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 111-119). Available also in a digital version from Dissertation Abstracts.
135	Performance enhancement in column IV mobility, bandgap, and strain engineered MOSFETs Onsongo, David Masara, Banerjee, Sanjay, January 2003 (has links) Thesis (Ph. D.)--University of Texas at Austin, 2003. / Supervisor: Sanjay K. Banerjee. Vita. Includes bibliographical references. Also available from UMI.
136	Evaluation of nitrogen incorporation effects in HfO₂ gate dielectric for improved MOSFET performance Cho, Hag-ju, Lee, Jack Chung-Yeung, January 2003 (has links) Thesis (Ph. D.)--University of Texas at Austin, 2003. / Supervisor: Jack C. Lee. Vita. Includes bibliographical references. Available also from UMI Company.
137	Heterojunction MOSFET devices using column IV alloys grown by UHVCVD / Quinones, Eduardo Jose, January 1999 (has links) Thesis (Ph. D.)--University of Texas at Austin, 1999. / Vita. Includes bibliographical references (leaves 112-119). Available also in a digital version from Dissertation Abstracts.
138	Novel 3-D CMOS and BiCMOS devices for high-density and high-speed ICs / Liu, Haitao. January 2003 (has links) Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2003. / Includes bibliographical references. Also available in electronic version. Access restricted to campus users.
139	RF integrated circuit design options : from technology to layout / Zhang, Xibo. January 2003 (has links) Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003. / Includes bibliographical references (leaves 59-61). Also available in electronic version. Access restricted to campus users.
140	RF characterization and modeling of MOSFET power amplifier in wireless communication / Tsui, Kenneth Kin Pun. January 2003 (has links) Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003. / Includes bibliographical references. Also available in electronic version. Access restricted to campus users.

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