Perowskite und Perowskit-artige Materialien sind von großem Interesse, da sie eine Vielzahl von strukturellen und physikalischen Eigenschaften haben, welche die Möglichkeit bieten, sie für unterschiedliche Anwendungen einzusetzen. Die Methode der Liquid-Delivery Metal Organic Chemical Vapour Deposition (LD-MOCVD) wurde gewählt, da sie eine gute Kontrolle über die Zusammensetzung ternärer Oxide und eine hohe Homogenität der Filme ermöglicht. Darüber hinaus können mit dieser Methode Filme hergestellt werden, die aus Elementen bestehen, für welche nur feste Precursor oder welche mit niedrigem Dampfdruck zur Verfügung stehen. Ziel dieser Arbeit war es, mit Hilfe der LD-MOCVD Filme aus SrRuO3, Bi4Ti3O12 und (Na,Bi)4Ti3O12 abzuscheiden und den Einfluss der Wachstumsbedingungen auf die Eigenschaften der Filme zu untersuchen. Zusätzlich wurde die Wirkung der Verspannung, die durch die Gitterfehlanpassung zwischen Substrat und Film entsteht, auf die physikalischen Eigenschaften der Schichten untersucht. SrRuO3 Filme wurden auf gestuften SrTiO3(001), NdGaO3(110) und DyScO3(110) Substraten gewachsen, deren Oberflächenterminierung durch oberflächensensitive Proton-induzierte Auger-Elektronen-Spektroskopie (AES) bestimmt wurde. Die Substrate wurden unter verschiedenen Bedingungen durch Änderung der Temperdauer und -atmosphäre präpariert. Die systematische Untersuchung der Beziehung zwischen Verspannung und Curie-Temperatur von dünnen SrRuO3(100) Filmen erfolgte unter Verwendung von Substraten mit unterschiedlichen Gitterkonstanten. Die beobachtete Curie-Temperatur sank mit erhöhter kompressiver Verspannung und nahm mit erhöhter tensiler Verspannung zu. Um stöchiometrische und epitaktische Bi4Ti3O12(001) Filme zu wachsen, war aufgrund der Flüchtigkeit des Bismuts ein Bi Überschuss in der Precursor-Lösung notwendig. Die Substitution von Bi durch Na in Bi4Ti3O12 wurde zum ersten Mal in LD-MOCVD-Filmen erreicht. / Perovskites and perovskite-like materials are actually of great interest since they offer a wide range of structural and physical properties giving the opportunity to employ these materials for different applications. Liquid-Delivery Metal Organic Chemical Vapour deposition (LD-MOCVD) was chosen due to the easy composition control for ternary oxides, high uniformity and good conformal step coverage. Additionally, it allows growing the films, containing elements, for which only solid or low vapour pressure precursors, having mainly thermal stability problems over long heating periods, are available. The purpose of this work was to grow SrRuO3, Bi4Ti3O12 and (Na, Bi)4Ti3O12 films by LD-MOCVD and to investigate the influence of the deposition conditions on the properties of the films. Additionally, the effect of the strain due to the lattice mismatch between substrates and films on the physical properties of the films was also investigated. SrRuO3 films were grown on stepped SrTiO3(001), NdGaO3(110) and DyScO3(110) substrates, which were prepared under different conditions by changing the annealing time and atmosphere. The termination of the substrates was measured by surface sensitive proton-induced Auger Electron Spectroscopy (p-AES) technique. Another systematic study of the relation between epitaxial strain and Curie temperature of thin SrRuO3(100) films was performed by using substrates with different lattice constants. The observed Curie temperature decreased with compressive and increased with tensile strain. Thin films of Bi4Ti3O12 as well as (Na, Bi)4Ti3O12 were successfully deposited. In order to grow stoichiometric and epitaxial Bi4Ti3O12(001) films, Bi excess in the precursor solution was necessary, due to the volatility of Bi. Substitution of Bi with Na in Bi4Ti3O12 was achieved for the first time for the films deposited by LD-MOCVD.

<p>Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO₂ and single crystalline α-Al₂O₃ by the so called Atomic Layer Deposition (ALD) techniques has been studied. This technique allows precise control of the growth process at monolayer level on solid substrates. Other characteristic features of ALD are that it produces films with excellent step coverage and good uniformity even as extremely thin films on complicated shaped substrates.</p><p>Alternative deposition schemes were developed for the materials of interest. It was demonstrated that use of intermediate water pulses affected the deposition pathways considerably. By adding water, the films are thought to grow via formation of an oxide over-layer instead of through a direct reaction between the precursors as in the case without water.</p><p>For growth of copper(I) nitride from Cu(hfac)₂ and ammonia no film growth occurred without adding water to the growth process. The Cu₃N films could be transformed into conducting copper films by post annealing. In copper growth from CuCl and H₂ the water affected film growth on the alumina substrates considerably more than on the fused silica substrates. The existence of surface -OH and/or -NH_x groups was often found to play an important role, according to both theoretical calculations and experimental results.</p>

Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO2 and single crystalline α-Al2O3 by the so called Atomic Layer Deposition (ALD) techniques has been studied. This technique allows precise control of the growth process at monolayer level on solid substrates. Other characteristic features of ALD are that it produces films with excellent step coverage and good uniformity even as extremely thin films on complicated shaped substrates. Alternative deposition schemes were developed for the materials of interest. It was demonstrated that use of intermediate water pulses affected the deposition pathways considerably. By adding water, the films are thought to grow via formation of an oxide over-layer instead of through a direct reaction between the precursors as in the case without water. For growth of copper(I) nitride from Cu(hfac)2 and ammonia no film growth occurred without adding water to the growth process. The Cu3N films could be transformed into conducting copper films by post annealing. In copper growth from CuCl and H2 the water affected film growth on the alumina substrates considerably more than on the fused silica substrates. The existence of surface -OH and/or -NHx groups was often found to play an important role, according to both theoretical calculations and experimental results.