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Three-dimensional spheroid arrays represent in vivo activity better than conventional 2D cell culturing. A high-throughput microfluidic chip may be capable of depositing cells into spheroid arrays, but it is difficult to regulate the path of individual cells for deposition. Droplets that encapsulate cells may aid in facilitating cell delivery and deposition in the return bend of a microfluidic chip. In this study, a low-cost method for fabricating polymer-cast microfluidic chips has been developed for rapid device prototyping. Computational fluid dynamic (CFD) simulations were conducted to quantify how a change in geometry or fluid properties affects the dynamics of a droplet. These simulations have shown that the deformation, velocity, and trajectory of a droplet are altered when varying the geometry and fluid properties of a multiphase microfluidic system. This quantitative data will be beneficial for the future design of a microfluidic chip for cell deposition into 3D spheroid arrays.

Neste trabalho se realiza a síntese e caracterização de nanofios de óxido de zinco. Adicionalmente se apresenta o processo de montagem de um dispositivo para medidas elétricas deste material. Estuda-se complementarmente o efeito do tratamento de plasma sobre as propriedades de fotoluminescência do material. Nanofios foram sintetizados pelo mecanismo vapor-líquido-sólido (VLS), utilizando ouro como catalizador e safira c-plane como substrato. As amostras foram caracterizadas utilizando microscopia eletrônica de varredura, fotoluminescência a temperatura ambiente, difração de raios X, e microscopia eletrônica de transmissão. Os nanofios obtidos têm seção transversal com formato quase hexagonal, e larguras de aproximadamente 46 nm. O comprimento deles varia de 3 a 10 μm. Os resultados de difração de raios x e microscopia eletrônica de transmissão mostram que eles são monocristalinos com rede cristalina tipo wurtzita, e com direção de crescimento no eixo c. Foram estudados os efeitos da potência de plasma de oxigênio (O2) na fotoluminescência dos nanofios a temperatura ambiente. A diferença na fotoluminescência após diferentes tratamentos de plasma de O2 mostra que a razão entre a emissão da região do band gap e da banda do visível pode ser modificada pelo tratamento. Este efeito corrobora com a hipótese de que a banda verde de luminescência está relacionada às vacâncias de zinco. A variação percentual da razão entre as duas regiões apresenta uma dependência linear com a potência do plasma. / In this work, we performed the synthesis and characterization of zinc oxide nanowires. We also report an assembly process to measure the electrical properties of this material. We study the plasma treatment effect on the photoluminescence spectra of the nanowires. Nanowires were synthesized via vapor-liquid-solid mechanism, using gold as catalyst and c-plane sapphire as substrate. The samples were characterized using scanning electron microscopy, room temperature photoluminescence, x-rays diffraction and transmission electron microscopy. Our nanowires show a quasi-hexagonal cross section, with diameters of approximately 46 nm. Their lengths ranged from 3 to 10 μm. Our results show monocrystalline wurtzite crystal nanowires with c growth direction. We also study the plasma power effect of oxygen (O2) plasma treatment on the room temperature photoluminescence spectra of the nanowires. Our results show that the deep level emission to near band emission ratio decreases with the plasma treatment. This effect supports the hypothesis that claims the green band luminescence is related to the oxygen vacancies. Furthermore, the relative ratio change depends linearly on the plasma power.

<p>Direct semiconductor wafer bonding has emerged as a technology to meet the demand foradditional flexibility in materials integration. The applications are found in microelectronics, optoelectronics and micromechanics. For instance, wafer bonding is used to produce silicon-on-insulator (SOI) wafers. Wafer bonding is also interesting to use for combining dissimilar semiconductors, such as Si and InP, with different dictated optical, electronic and mechanicalproperties. This enables a completely new freedom in the design of components and systems, e.g. for high performance optoelectronic integrated circuits (OEIC). Although wafer bonding has proved to be a useful and versatile tool, the high temperature annealing that is needed to achieve reliable properties sometimes hampers its applicability. Therefore, low temperature wafer bonding procedures may further qualify this technology.</p><p>In the present thesis, low temperature wafer bonding procedures using oxygen plasma surface activation have been studied. A specially designed fixture was adopted enabling <i>in situ </i>oxygen plasma wafer bonding. Oxygen plasma surface activation was seen to indeed yield high Si-Si bonding-strength at low temperatures. Here, the optimisation of the plasma parameters was shown to be the key to improved results. Furthermore, dependence of wafer bonded Si p-n junctions on the annealing temperature was investigated. InP-to-Si wafer bonding is also presented within this thesis. High temperature annealing was seen to induce severe material degradation. However, using oxygen plasma assisted wafer bonding reliable InP-to-Si integration was achieved already at low temperature, thereby circumventing the problems associated with the lattice and thermal mismatch that exist between these materials. As a result, low temperature InP-based epitaxial-layer transferring to Si could be presented. Finally, high-quality SiO2 insulator on InP and Si was realised at low temperatures.</p><p>It is concluded that low temperature oxygen plasma assisted wafer bonding is an interesting approach to integrate dissimilar materials, for a wide range of applications.</p>

Silicone rubber based on polydimethylsiloxane is used ashigh voltage outdoor insulation, due to its ability to preservethe hydrophobic surface properties during service and evenregain hydrophobicity after exposure to electrical discharges.The underlying processes for the hydrophobic recovery arediffusion of low molar mass siloxanes from the bulk to thesurface and reorientation by conformational changes ofmolecules in the surface region. Only little is known of whichfactors are responsible for the long-term stability of thishydrophobic recovery. It is therefore important to increase theknowledge about the fundamental mechanisms for the loss andrecovery of hydrophobicity of silicone rubbers, exposed toelectrical discharges. Addition-cured polydimethylsiloxanenetworks, with known crosslink densities, were exposed tocorona discharges and air/oxygen-plasma and the loss andrecovery of hydrophobicity was characterised by contact anglemeasurements. The degree of surface oxidation increased withincreasing exposure time with a limiting depth of 100- 150 nm,as assessed by neutron reflectivity measurements. The oxidationrate increased with increasing crosslink density of the polymernetwork, according to X-ray photoelectron spectroscopy. Withinthe oxidised layer, a brittle, silica-like layer was graduallydeveloped with increasing exposure time. The hydrophobicrecovery following the corona or air/oxygen- plasma exposuresoccurred at a slow pace by diffusion of cyclic oligomericdimethylsiloxanes through the micro-porous but uncrackedsilica-like surface layer or at a much higher pace by transportof the oligomers through cracks in the silica-like layer. Theoligomers were present in the bulk, but additional amounts wereformed during exposure to corona discharges. High-temperaturevulcanised silicone rubber specimens were aged in a coastalenvironment under high electrical stress levels (100 V/mm). Thechanges in surface structure and properties were compared tothe data obtained from specimens exposed to coronadischarges/plasma. The dominating degradation mechanism wasthermal depolymerisation, initiated by hot discharges. Thisresulted in the formation of mobile siloxanes, of which the lowmolar mass fraction consisted of cyclic oligomericdimethylsiloxanes. Oxidative crosslinking resulting insilica-like surface layers was not observed during theseconditions. <b>Keywords:</b>silicone rubber, polydimethylsiloxane,hydrophobicity, corona, air-plasma, oxygen-plasma, surfacecharacterisation, degradation products, crosslink density.

Direct semiconductor wafer bonding has emerged as a technology to meet the demand foradditional flexibility in materials integration. The applications are found in microelectronics, optoelectronics and micromechanics. For instance, wafer bonding is used to produce silicon-on-insulator (SOI) wafers. Wafer bonding is also interesting to use for combining dissimilar semiconductors, such as Si and InP, with different dictated optical, electronic and mechanicalproperties. This enables a completely new freedom in the design of components and systems, e.g. for high performance optoelectronic integrated circuits (OEIC). Although wafer bonding has proved to be a useful and versatile tool, the high temperature annealing that is needed to achieve reliable properties sometimes hampers its applicability. Therefore, low temperature wafer bonding procedures may further qualify this technology. In the present thesis, low temperature wafer bonding procedures using oxygen plasma surface activation have been studied. A specially designed fixture was adopted enabling in situ oxygen plasma wafer bonding. Oxygen plasma surface activation was seen to indeed yield high Si-Si bonding-strength at low temperatures. Here, the optimisation of the plasma parameters was shown to be the key to improved results. Furthermore, dependence of wafer bonded Si p-n junctions on the annealing temperature was investigated. InP-to-Si wafer bonding is also presented within this thesis. High temperature annealing was seen to induce severe material degradation. However, using oxygen plasma assisted wafer bonding reliable InP-to-Si integration was achieved already at low temperature, thereby circumventing the problems associated with the lattice and thermal mismatch that exist between these materials. As a result, low temperature InP-based epitaxial-layer transferring to Si could be presented. Finally, high-quality SiO2 insulator on InP and Si was realised at low temperatures. It is concluded that low temperature oxygen plasma assisted wafer bonding is an interesting approach to integrate dissimilar materials, for a wide range of applications.

<p>Silicone rubber based on polydimethylsiloxane is used ashigh voltage outdoor insulation, due to its ability to preservethe hydrophobic surface properties during service and evenregain hydrophobicity after exposure to electrical discharges.The underlying processes for the hydrophobic recovery arediffusion of low molar mass siloxanes from the bulk to thesurface and reorientation by conformational changes ofmolecules in the surface region. Only little is known of whichfactors are responsible for the long-term stability of thishydrophobic recovery. It is therefore important to increase theknowledge about the fundamental mechanisms for the loss andrecovery of hydrophobicity of silicone rubbers, exposed toelectrical discharges. Addition-cured polydimethylsiloxanenetworks, with known crosslink densities, were exposed tocorona discharges and air/oxygen-plasma and the loss andrecovery of hydrophobicity was characterised by contact anglemeasurements. The degree of surface oxidation increased withincreasing exposure time with a limiting depth of 100- 150 nm,as assessed by neutron reflectivity measurements. The oxidationrate increased with increasing crosslink density of the polymernetwork, according to X-ray photoelectron spectroscopy. Withinthe oxidised layer, a brittle, silica-like layer was graduallydeveloped with increasing exposure time. The hydrophobicrecovery following the corona or air/oxygen- plasma exposuresoccurred at a slow pace by diffusion of cyclic oligomericdimethylsiloxanes through the micro-porous but uncrackedsilica-like surface layer or at a much higher pace by transportof the oligomers through cracks in the silica-like layer. Theoligomers were present in the bulk, but additional amounts wereformed during exposure to corona discharges. High-temperaturevulcanised silicone rubber specimens were aged in a coastalenvironment under high electrical stress levels (100 V/mm). Thechanges in surface structure and properties were compared tothe data obtained from specimens exposed to coronadischarges/plasma. The dominating degradation mechanism wasthermal depolymerisation, initiated by hot discharges. Thisresulted in the formation of mobile siloxanes, of which the lowmolar mass fraction consisted of cyclic oligomericdimethylsiloxanes. Oxidative crosslinking resulting insilica-like surface layers was not observed during theseconditions.</p><p><b>Keywords:</b>silicone rubber, polydimethylsiloxane,hydrophobicity, corona, air-plasma, oxygen-plasma, surfacecharacterisation, degradation products, crosslink density.</p>

Neste trabalho se realiza a síntese e caracterização de nanofios de óxido de zinco. Adicionalmente se apresenta o processo de montagem de um dispositivo para medidas elétricas deste material. Estuda-se complementarmente o efeito do tratamento de plasma sobre as propriedades de fotoluminescência do material. Nanofios foram sintetizados pelo mecanismo vapor-líquido-sólido (VLS), utilizando ouro como catalizador e safira c-plane como substrato. As amostras foram caracterizadas utilizando microscopia eletrônica de varredura, fotoluminescência a temperatura ambiente, difração de raios X, e microscopia eletrônica de transmissão. Os nanofios obtidos têm seção transversal com formato quase hexagonal, e larguras de aproximadamente 46 nm. O comprimento deles varia de 3 a 10 μm. Os resultados de difração de raios x e microscopia eletrônica de transmissão mostram que eles são monocristalinos com rede cristalina tipo wurtzita, e com direção de crescimento no eixo c. Foram estudados os efeitos da potência de plasma de oxigênio (O2) na fotoluminescência dos nanofios a temperatura ambiente. A diferença na fotoluminescência após diferentes tratamentos de plasma de O2 mostra que a razão entre a emissão da região do band gap e da banda do visível pode ser modificada pelo tratamento. Este efeito corrobora com a hipótese de que a banda verde de luminescência está relacionada às vacâncias de zinco. A variação percentual da razão entre as duas regiões apresenta uma dependência linear com a potência do plasma. / In this work, we performed the synthesis and characterization of zinc oxide nanowires. We also report an assembly process to measure the electrical properties of this material. We study the plasma treatment effect on the photoluminescence spectra of the nanowires. Nanowires were synthesized via vapor-liquid-solid mechanism, using gold as catalyst and c-plane sapphire as substrate. The samples were characterized using scanning electron microscopy, room temperature photoluminescence, x-rays diffraction and transmission electron microscopy. Our nanowires show a quasi-hexagonal cross section, with diameters of approximately 46 nm. Their lengths ranged from 3 to 10 μm. Our results show monocrystalline wurtzite crystal nanowires with c growth direction. We also study the plasma power effect of oxygen (O2) plasma treatment on the room temperature photoluminescence spectra of the nanowires. Our results show that the deep level emission to near band emission ratio decreases with the plasma treatment. This effect supports the hypothesis that claims the green band luminescence is related to the oxygen vacancies. Furthermore, the relative ratio change depends linearly on the plasma power.

Neste trabalho se realiza a síntese e caracterização de nanofios de óxido de zinco. Adicionalmente se apresenta o processo de montagem de um dispositivo para medidas elétricas deste material. Estuda-se complementarmente o efeito do tratamento de plasma sobre as propriedades de fotoluminescência do material. Nanofios foram sintetizados pelo mecanismo vapor-líquido-sólido (VLS), utilizando ouro como catalizador e safira c-plane como substrato. As amostras foram caracterizadas utilizando microscopia eletrônica de varredura, fotoluminescência a temperatura ambiente, difração de raios X, e microscopia eletrônica de transmissão. Os nanofios obtidos têm seção transversal com formato quase hexagonal, e larguras de aproximadamente 46 nm. O comprimento deles varia de 3 a 10 μm. Os resultados de difração de raios x e microscopia eletrônica de transmissão mostram que eles são monocristalinos com rede cristalina tipo wurtzita, e com direção de crescimento no eixo c. Foram estudados os efeitos da potência de plasma de oxigênio (O2) na fotoluminescência dos nanofios a temperatura ambiente. A diferença na fotoluminescência após diferentes tratamentos de plasma de O2 mostra que a razão entre a emissão da região do band gap e da banda do visível pode ser modificada pelo tratamento. Este efeito corrobora com a hipótese de que a banda verde de luminescência está relacionada às vacâncias de zinco. A variação percentual da razão entre as duas regiões apresenta uma dependência linear com a potência do plasma. / In this work, we performed the synthesis and characterization of zinc oxide nanowires. We also report an assembly process to measure the electrical properties of this material. We study the plasma treatment effect on the photoluminescence spectra of the nanowires. Nanowires were synthesized via vapor-liquid-solid mechanism, using gold as catalyst and c-plane sapphire as substrate. The samples were characterized using scanning electron microscopy, room temperature photoluminescence, x-rays diffraction and transmission electron microscopy. Our nanowires show a quasi-hexagonal cross section, with diameters of approximately 46 nm. Their lengths ranged from 3 to 10 μm. Our results show monocrystalline wurtzite crystal nanowires with c growth direction. We also study the plasma power effect of oxygen (O2) plasma treatment on the room temperature photoluminescence spectra of the nanowires. Our results show that the deep level emission to near band emission ratio decreases with the plasma treatment. This effect supports the hypothesis that claims the green band luminescence is related to the oxygen vacancies. Furthermore, the relative ratio change depends linearly on the plasma power.

京都大学 / 0048 / 新制・課程博士 / 博士(医学) / 甲第22367号 / 医博第4608号 / 新制||医||1043(附属図書館) / 京都大学大学院医学研究科医学専攻 / (主査)教授 戸口田 淳也, 教授 妻木 範行, 教授 安達 泰治 / 学位規則第4条第1項該当 / Doctor of Medical Science / Kyoto University / DFAM