This article describes that we grew InGaN ternary films by Plasma- Assisted Molecular Beam Epitaxy (PAMBE) on the ZnO substrate O-polar (0001) surface. Before we grew the films, we grew the InN films on the ZnO substrate to find out the interface reaction conditions. We used Double Crystal X-ray Diffraction (XRD) to analyze the diffraction peak of InGaN films after we grew them. We found it was very hard to grow the single content InGaN films by generally methods. We tried period shutter control method to grow films, and we succeeded to grow the single phase films. We analyzed the morphologies by AFM and SEM, the microstructures by TEM, the electric properties by Hall measurement, and the fluorescent characteristics by PL.