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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

An investigation into the stress-strain state of case furniture

Crisan, Romulus Leon January 2001 (has links)
No description available.
2

Experimental and Numerical Investigations of Microdroplet Evaporation with a Forced Pinned Contact Line

Gleason, Kevin 01 May 2014 (has links)
Experimental and numerical investigations of water microdroplet evaporation on heated, laser patterned polymer substrates are reported. The study is focused on both (1) validating numerical models with experimental data, (2) identifying how changes in the contact line infuences evaporative heat transfer and (3) determining methods of controlling contact line dynamics during evaporation. Droplets are formed using a bottom-up methodology, where a computer-controlled syringe pump supplies water to a ~200[micro]m in diameter fluid channel within the heated substrate. This methodology facilitates precise control of the droplets growth rate, size, and inlet temperature. In addition to this microchannel supply line, the substrate surfaces are laser patterned with a moat-like trench around the fluid-channel outlet, adding additional control of the droplets contact line motion, area, and contact angle. In comparison to evaporation on non-patterned substrate surfaces, this method increases the contact line pinning time by ~60% of the droplets lifetime. The evaporation rates are compared to the predictions of a commonly reported model based on a solution of the Laplace equation, providing the local evaporation flux along the droplets liquid-vapor interface. The model consistently overpredicts the evaporation rate, which is presumable due to the models constant saturated vapor concentration along the droplets liquid-vapor interface. In result, a modified version of the model is implemented to account for variations in temperature along the liquid-vapor interface. A vapor concentration distribution is then imposed using this temperature distribution, increasing the accuracy of predicting the evaporation rate by ~7:7% and ~9:9% for heated polymer substrates at T[sub]s = 50[degrees]C‰ and 65‰[degrees]C, respectively.
3

Design Of A Compliant Bistable Lock Mechanism For A Dishwasher Using Functionally Binary Initially Curved Pinned-pinned Segments

Unverdi, Uygar 01 June 2012 (has links) (PDF)
The aim of this study is to design a compliant lock mechanism for a dishwasher, using a systematic approach. Functionally binary pinned-pinned segment that exhibits bistable behavior is utilized. Pseudo-rigid-body model of the whole mechanism and the half segment is developed separately and the corresponding calculations are carried out. Among current solutions a different method namely &ldquo / arc fitting method&rdquo / is developed and it is utilized to construct the model. A software code is written to get the exact solutions, which require the evaluation of elliptic integrals. Results are compared with the analytical model and confirmed with physical prototype. Predefined tip forces are seen to provide the transition from one stable position to other. Durability, reliability and compactness characteristics are particularly considered.
4

Numerical Studies Of Thermodynamic And Structural Properties Of Disordered Solids

Ghosh, Siddhartha Shankar 07 1900 (has links) (PDF)
No description available.
5

The post-buckled coupled mode interaction behaviour of thin-walled members in compression using finite element simulation

Yidris, Noorfaizal January 2012 (has links)
The work of this thesis sets out to give a clearer in-depth understanding of the failure mechanics of thin-walled compression members which are associated with complex interactions between the different buckling modes during the loading process. This thesis employs the finite element method in order to examine the effect of the modelling techniques imposed at the section junctions of short struts and to investigate the influence of the local and global end conditions with regard to support and loading on the compressive response of various sections, i.e. I-sections, plain channel sections, box-sections, and lipped channel sections. The thesis also details appropriate finite element modelling strategies and solution procedures taking due account of the influence of material nonlinearity and geometrical imperfections for the determination of the coupled mode interactive response of thin-walled compression members. A detailed account of the complete loading history of the compression members from the beginning of loading through to final collapse is given in the thesis. This involves elastic local buckling, nonlinear elastic and elasto-plastic post-buckling interaction behaviour and yield propagation leading to the development of an appropriate failure mechanism which causes final collapse and unloading. A new finite element modelling strategy has been developed in the thesis with particular reference to being able to deal with the classical assumption of the stress-free in-plane boundary conditions existing at the section junctions of short length strut members during post-local buckling. Also, for fixed-ended columns, with particular reference to singly-symmetric plain channel sections, it has been shown that column deflections are initiated from the onset of local buckling for the case of the constituent plate elements of the section being locally rotationally constrained at their ends. Such columns should not therefore be considered as an overall bifurcation problem of the locally buckled member. In the case of the pinned and fixed-ended boundary conditions of the columns, the finite element simulations are shown to be able to accurately describe the rather different complex failure mechanics with a high degree of imperfection sensitivity being shown to be in evidence for the pin-ended case. Considerably good agreement has been shown to occur with the independent simulations of other researchers using the finite strip method of analysis, with the analytical solution procedures of others and with the findings from independent test work and this has provided confidence in the viability and usefulness of the modelling strategies and solution procedures developed in this thesis.
6

Nouvelle architecture de pixel CMOS éclairé par la face arrière, intégrant une photodiode à collection de trous et une chaine de lecture PMOS pour capteurs d’image en environnement ionisant / Novel back-side illuminated CMOS pixel architecture integrating a hole-based photodiode and PMOS readout circuitry for image sensors in ionising environment

Mamdy, Bastien 30 September 2016 (has links)
Grâce à l'explosion du marché grand public des smartphones et tablettes, les capteurs d'image CMOS ont bénéficiés de développements technologiques majeurs leur permettant de rivaliser voir même de devancer les performances des capteurs CCD. En parallèle, dans les domaines de l'aérospatial ou de l'imagerie médicale, des capteurs CMOS ont également été développés pour des applications à fortes valeurs ajoutées avec des technologies reconnues pour leur robustesse en environnement ionisant. Le travail de cette thèse a pour but de réunir dans une même architecture de pixel les dernières avancées technologiques développées pour les capteurs grands publics avec une solution novatrice de durcissement aux rayonnements ionisants récemment développée chez STMicroelectronics. Pour la première fois, cette nouvelle architecture de pixel de 1,4µm de côté et éclairée par la face arrière intègre une photodiode pincée verticale à collection de trous, une chaine de lecture composée de transistors PMOS et des tranchées d'isolation profondes à passivation passive ou active. Ce type de pixel a été conçu à l'aide de simulations TCAD en trois dimensions qui ont permis d'optimiser l'intégration de procédés pour sa fabrication. Il a été caractérisé et comparé à un pixel équivalent de type N avant et après irradiation par rayonnement gamma. Le pixel développé au cours de cette thèse présente intrinsèquement un plus faible courant d'obscurité que son homologue de type N et une meilleure résistance aux radiations. La passivation active des tranchées d'isolation profondes permet d'atténuer fortement l'impact des dégradations habituellement observées au niveau des interfaces Si/SiO2 et s'avère donc prometteuse en environnement ionisant. Des mécanismes intrinsèquement différents de formation de pixels blancs sous irradiation ont été mis en évidence pour les pixels de type P et de type N. Enfin, les technologies de l'éclairement par la face arrière et de la photodiode verticale contribuent chacune à la bonne efficacité quantique du pixel ainsi qu'à sa capacité de stockage importante / Thanks to the growing smartphones and tablets consumer markets, CMOS image sensors have benefited from major technology developments and are able to rival with and even outperform CCD sensors. In parallel, for spatial and medical imaging applications, CMOS sensors have been developed using technologies recognized for their robustness in harsh ionizing environment. This Ph.D. thesis work aims at combining in one single pixel architecture the latest technology developments driven by consumer applications with a novel solution for radiation hardening recently developed at STMicroelectronics. For the first time, this innovative back-side illuminated pixel architecture integrates within a 1.4µm pitch a vertical pinned photodiode based on hole-collection, a PMOS readout chain and deep trench isolation with either passive or active interface passivation. This pixel has been developed using 3D-TCAD simulations allowing fast and efficient optimization of its fabrication process. Through a series of electro-optical characterizations, we have compared its performances to its N-type equivalent before and after irradiation with gamma rays. The pixel developed during this thesis exhibits intrinsically lower level of dark current than its N-type counterpart and improved radiation hardness. Active passivation of deep trench isolation greatly decreases the impact of degradations usually observed at Si/SiO2 interfaces and therefore shows very promising results in ionizing environment. Evidence of intrinsically different mechanisms of white pixel formation under irradiation for N-type and P-type pixels have been presented. Finally, back-side illumination technology and the vertical photodiode both contribute to the pixel’s high full well capacity and good quantum efficiency
7

Elaboration d’une technologie de pixels actifs à détection de trous et évaluation de son comportement en environnement ionisant / Development of a hole-based active pixel sensor and evaluation of its behavior under ionizing environment

Place, Sébastien 06 December 2012 (has links)
Les capteurs d’images CMOS connaissent une croissance rapide vers des applications à fortes valeurs ajoutées. Certains marchés en devenir, comme les applications d’imagerie médicale,sont axés sur la tenue aux rayonnements ionisants. Des solutions de durcissement par dessin existent actuellement pour limiter les effets de ces dégradations. Cependant, ces dernières peuvent contraindre assez fortement certains paramètres du pixel. Dans ce contexte, cette thèse propose une solution novatrice de durcissement aux effets d’ionisation par les procédés.Elle suggère l’utilisation de pixels intégrant une photodiode pincée à collection de trous pour limiter la dégradation du courant d’obscurité : paramètre le plus sévèrement impacté lors d’irradiations ionisantes. Cette étude est donc premièrement centrée sur la modélisation et l’étude du courant d’obscurité sur des capteurs CMOS standards aussi bien avant qu’après irradiation. Ces dernières assimilées, un démonstrateur d’un capteur intégrant des pixels de1.4 μm à détection de trous est proposé et réalisé. Les résultats en courant d’obscurité, induit par la contribution des interfaces, montrent de belles perspectives avant irradiation. Ce capteur a d’ailleurs été utilisé pour effectuer une comparaison directe sous irradiation entre un capteur à détection de trous et d’électrons à design identique. Ces essais montrent une réduction significative du courant d’obscurité aux fortes doses. Des voies d’amélioration sont proposées pour améliorer l’efficacité quantique du capteur, principal point à optimiser pour des applications aussi bien grand public que médicales. / CMOS image sensors are rapidly gaining momentum in high end applications. Some emerging markets like medical imaging applications are focused on hardening against ionizing radiation. Design solutions currently exist to mitigate the effects of these degradations. However, they may introduce additional limitations on pixel performances. In this context, this thesis proposes an innovative solution of hardening by process against ionization effects. It suggests using hole pinned photodiode pixels to mitigate the dark current degradation: one of the most severely impacted parameter during ionizing radiation. This study is first focused on the modeling and understanding of dark current variation on standard CMOS sensors before and after irradiation. Next, a sensor integrating hole-based 1.4 micron pixels is proposed and demonstrated. Dark current performances induced by interfaces contribution are promising before irradiation. A direct comparison under irradiation between hole and electron based sensors with similar design has been carried out. These experiments show a significant reduction in dark current at high doses. Ways of improvement are proposed to enhance the quantum efficiency of this sensor, the main area for improvement as well consumer as medical applications.
8

Estimation et modélisation de paramètres clés des capteurs d’images CMOS à photodiode pincée pour applications à haute résolution temporelle / Estimation and modeling of key design parameters of pinned photodiode CMOS image sensors for high temporal resolution applications

Pelamatti, Alice 17 November 2015 (has links)
Poussée par une forte demande et un marché très compétitif, la technologie PPD CIS est en évolution permanente. Du fait de leurs très bonnes performances en terme de bruit, les capteurs d’image CMOS à base de Photodiode Pincée (PPD CIS) peuvent désormais atteindre une sensibilité de l’ordre de quelques photons, ce qui rend cette technologie particulièrement intéressante pour les applications d’imagerie à haute résolution temporelle. Aujourd’hui, la physique des photodiodes pincées n’est pas encore comprise dans sont intégralité et il y a un manque important d’uniformisation des méthodes de caractérisation de ces détecteurs. Ces travaux s’intéressent à la définition, à la modélisation analytique, à la simulation et à l’estimation de paramètres clés des PPD CIS, tels que le temps de transfert, la tension de pincement et la full well capacity (FWC). Comme il a été mis en évidence par cette thèse, il est de première importance de comprendre l’effet des conditions expérimentales sur les performances de ces capteurs. Ceci aussi bien pour l’optimisation de ces paramètres lors de la conception du capteur, que lors de la phase de caractérisions de celui-ci, et enfin pour choisir correctement les conditions de mesures lors de la mise en œuvre du dispositif. / Driven by an aggressive market competition, CMOS Image Sensor technology is in continuous evolution. Thanks to the outstanding noise performances of Pinned Photodiode (PPD) CIS, CMOS sensors can now reach a few photons sensitivity, which makes this technology a particularly interesting candidate for high temporal resolution applications. Despite the incredibly large production volume, today, the PPD physics is not yet fully understood, and there is still a lack of golden standards for the characterization of PPD performances. This thesis focuses on the definition, analytical modeling, simulation and estimation of PPD key design parameters, with a particular focus on charge mechanisms, on the pinning voltage and on the full well capacity. The models developed in this work can help both manufacturers and users understanding the design trade-offs and the dependence of these parameters from the experimental conditions, in order to optimize the sensor design, to correctly characterize the image sensor, and to adjust the operation conditions to reach optimum performances.
9

Spectroscopie du courant d’obscurité induit par les effets de déplacement atomique des radiations spatiales et nucléaires dans les capteurs d’images CMOS à photodiode pincée / Dark current spectroscopy of space and nuclear environment induced displacement damage defects in pinned photodiode based CMOS image sensors

Belloir, Jean-Marc 18 November 2016 (has links)
Les imageurs CMOS représentent un outil d’avenir pour de nombreuses applications scientifiques de haut vol, tellesque l’observation spatiale ou les expériences nucléaires. En effet, ces imageurs ont vu leurs performancesdémultipliées ces dernières années grâce aux avancées incessantes de la microélectronique, et présentent aussi desavantages indéniables qui les destinent à remplacer les CCDs dans les futurs instruments spatiaux. Toutefois, enenvironnement spatial ou nucléaire, ces imageurs doivent faire face aux attaques répétées de particules pouvantrapidement dégrader leurs performances électro-optiques. En particulier, les protons, électrons et ions présents dansl’espace ou les neutrons de fusion nucléaire peuvent déplacer des atomes de silicium dans le volume du pixel et enrompre la structure cristalline. Ces effets de déplacement peuvent former des défauts stables introduisant des étatsd’énergie dans la bande interdite du silicium, et ainsi conduire à la génération thermique de paires électron-trou. Parconséquent, ces radiations non-ionisantes produisent une augmentation permanente du courant d’obscurité despixels de l’imageur et donc à une diminution de leur sensibilité et de leur dynamique. L’objectif des présents travauxest d’étendre la compréhension des effets de déplacement sur l’augmentation du courant d’obscurité dans lesimageurs CMOS. En particulier, ces travaux se concentrent sur l’étude de la forme de la distribution de courantd’obscurité en fonction du type, de l’énergie et du nombre de particules ayant traversé l’imageur, mais aussi enfonction des caractéristiques de l’imageur. Ces nombreux résultats permettent de valider physiquement etexpérimentalement un modèle empirique de prédiction de la distribution du courant d’obscurité pour une utilisationdans les domaines spatial et nucléaire. Une autre partie majeure de ces travaux consiste à utiliser pour la première foisla technique de spectroscopie de courant d’obscurité pour détecter et caractériser individuellement les défautsgénérés par les radiations non-ionisantes dans les imageurs CMOS. De nombreux types de défauts sont détectés etdeux sont identifiés, prouvant l’applicabilité de cette technique pour étudier la nature des défauts cristallins généréspar les effets de déplacement dans le silicium. Ces travaux avancent la compréhension des défauts responsables del’augmentation du courant d’obscurité en environnement radiatif, et ouvrent la voie au développement de modèles deprédiction plus précis, voire de techniques permettant d’éviter la formation de ces défauts ou de les faire disparaître. / CMOS image sensors are envisioned for an increasing number of high-end scientific imaging applications such asspace imaging or nuclear experiments. Indeed, the performance of high-end CMOS image sensors has dramaticallyincreased in the past years thanks to the unceasing improvements of microelectronics, and these image sensors havesubstantial advantages over CCDs which make them great candidates to replace CCDs in future space missions.However, in space and nuclear environments, CMOS image sensors must face harsh radiation which can rapidlydegrade their electro-optical performances. In particular, the protons, electrons and ions travelling in space or thefusion neutrons from nuclear experiments can displace silicon atoms in the pixels and break the crystalline structure.These displacement damage effects lead to the formation of stable defects and to the introduction of states in theforbidden bandgap of silicon, which can allow the thermal generation of electron-hole pairs. Consequently, nonionizingradiation leads to a permanent increase of the dark current of the pixels and thus a decrease of the imagesensor sensibility and dynamic range. The aim of the present work is to extend the understanding of the effect ofdisplacement damage on the dark current increase of CMOS image sensors. In particular, this work focuses on theshape of the dark current distribution depending on the particle type, energy and fluence but also on the imagesensor physical parameters. Thanks to the many conditions tested, an empirical model for the prediction of the darkcurrent distribution induced by displacement damage in nuclear or space environments is experimentally validatedand physically justified. Another central part of this work consists in using the dark current spectroscopy techniquefor the first time on irradiated CMOS image sensors to detect and characterize radiation-induced silicon bulk defects.Many types of defects are detected and two of them are identified, proving the applicability of this technique to studythe nature of silicon bulk defects using image sensors. In summary, this work advances the understanding of thenature of the radiation-induced defects responsible for the dark current increase in space or nuclear environments. Italso leads the way to the design of more advanced dark current prediction models, or to the development ofmitigation strategies in order to prevent the formation of the responsible defects or to allow their removal.
10

Výstavní galerie v Olomouci / The Exhibition Gallery in Olomouc

Morcinková, Eliška January 2016 (has links)
The aim of this diploma thesis is the design of bearing construction of the Exhibition gallery in Olomouc. The building is of irregular shape with the biggest span of 50 m. The bearing structure in the highest point goes up to 14,6 m. The main design material is the glue-laminated timber GL24h and GL32h. The optimization of chosen parts of the structure has been made and the best option was then used in the detailed structural calculation. The bearing structure consists of circular columns to which the floor beams and roof trusses are connected. The irregular structure of the gallery comprises of three different roof types – flat trafficable roof, double-pitched glass roof formed by pitched cambered trusses and single-pitch roof spanning over the central part of a 20,7 m span. Within the thesis the design and check of the main structure members and connections has been made. The entire structure is pinned and its stiffness is secured by the system of tension rods and rigid floor and roof construction respectively.

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