Novel carborane (B10C2H12) and aromatic compounds (benzene, pyridine, diaminobenzene) copolymers and composite materials have been fabricated by electron beam induced cross-linking and plasma enhanced chemical vapor deposition (PECVD) respectively. Chemical and electronic structure of these materials were studied using X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS). UPS suggest that the systematic tuning of electronic structure can be achieved by using different aromatic compounds as co-precursors during the deposition. Furthermore, top of valence band is composed of states from the aromatic moieties implying that states near bottom of the conduction band is derived from carborane moieties. Current- voltage (I-V) measurements on the ebeam derived B10C2HX: Diaminobenzene films suggest that these films exhibit enhanced electron hole separation life time. Enhanced electron hole separation and charge transport are critical parameters in designing better neutron voltaic devices. Recently, PECVD composite films of ortho-carborane and pyridine exhibited enhanced neutron detection efficiency even under zero bias compared to the pure ortho-carborane derived films. This enhancement is most likely due to longer electron-hole separation, better charge transport or a combination of both. The studies determining the main factors for the observed enhanced neutron detection are in progress by fabricating composite films of carborane with other aromatic precursors and by altering the plasma deposition conditions. This research will facilitate the development of highly sensitive and cost effective neutron detectors, and has potential applications in spintronics and photo-catalysis.

No description available.

abstract: The realization of Silicon based photonic devices will enable much faster data transmission than is possible today using the current electronics based devices. Group IV alloys germanium tin (GeSn) and silicon germanium tin (SiGeSn) have the potential to form an direct bandgap material and thus, they are promising candidates to develop a Si compatible light source and advance the field of silicon photonics. However, the growth of the alloys is challenging as it requires low temperature growth and proper strain management in the films during growth to prevent tin segregation. In order to satisfy these criteria, various research groups have developed novel chemical vapor deposition (CVD) reactors to deposit the films. While these reactors have been highly successful in depositing high crystal quality high Sn concentration films, they are generally expensive set-ups which utilize several turbomolecular/cryogenic pumps and/or load-lock systems. An more economical process than the state-of-the art to grow group IV materials will be highly valuable. Thus, the work presented in this dissertation was focused on deposition of group IV semiconductor thin films using simplified plasma enhanced CVD (PECVD) reactors. Two different in-house assembled PECVD reactor systems, namely Reactor No. 1 and 2, were utilized to deposit Ge, GeSn and SiGeSn thin films. PECVD technique was used as plasma assistance allows for potentially depositing the films at growth temperatures lower than those of conventional CVD. Germane (GeH4) and Digermane (Ge2H6) were used as the Ge precursor while Disilane (Si2H6) and tin chloride (SnCl4) were used as the precursors for Si and Sn respectively. The growth conditions such as growth temperature, precursor flow rates, precursor partial pressures, and chamber pressure were varied in a wide range to optimize the growth conditions for the films. Polycrystalline Ge films and SiGeSn films with an Sn content upto 8% were deposited using Reactor No. 1 and 2. Development of epitaxial Ge buffers and GeSn films was accomplished using a modified Reactor No. 2 at temperatures <400oC without the aid of ultra-high vacuum conditions or a high temperature substrate pre-deposition bake thereby leading to a low economic and thermal budget for the deposition process. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2020