[pt] O estudo a respeito de homojunções e heterojunções se apresenta como de grande interesse científico e tecnológico, pois os mecanismos de formação e de atuação dessas estruturas ainda não são plenamente conhecidos. Essas junções estão na base de diferentes tecnologias, tais como, diodos, transistores, capacitores e supercapacitores, varistores, células fotovoltaicas, detectores de luz UV, diversos tipos de sensores, catalisadores e fotocatalisadores, entre outros. A presente tese de doutorado visa contribuir para o desenvolvimento de sistemas cerâmicos policristalinos (micro e nanoestruturados) à base de ZnO e SnO2 e para a compreensão dos mecanismos de formação das homojunções e heterojunções presentes nesse sistema material e suas relações com o comportamento varistor, em termos da estabilidade e degradação dessas junções. Microscopia eletrônica de varredura, espectroscopia de raios-X por dispersão de energia e difração de raios-X foram utilizadas para a caracterização microestrutural. Análises térmica e dilatométrica foram utilizadas para a determinação dos parâmetros e mecanismos de densificação e sinterização que dão origem às junções consideradas. Para a determinação das características elétricas foi utilizada a análise de capacitância e levantamento das curvas de polarização. Em função das composições químicas avaliadas foram obtidas microestruturas composta por homojunções e heterojunções, com diferentes níveis de densificação e características varistoras, ou seja, comportamento não-linear entre tensão e corrente elétrica, com tensões de chaveamento de diferentes magnitudes, permitindo relacionar o comportamento eletrotérmico dos varistores com as características das homojunções e heterojunções consideradas. / [en] The study about homojunctions and heterojunctions has scientific and technological value, because the mechanisms of formation and performance of these structures are not fully known. These junctions are in the base of different technologies, such as diodes, transistors, capacitors and supercapacitors, varistors, photovoltaic cells, detector of UV light, many kinds of sensors, catalysts and photocatalysts, among others. The present thesis aims to contribute to the development of polycrystalline ceramic systems (micro and nanostructured) based on ZnO and SnO2 and to the understanding ofthe mechanisms of formation of homojunctions and heterojunctions present in these systems and their relations with the varistor behavior, in terms of stability and degradation. Scanning electron microscopy, X-ray energy dispersive spectroscopy and X-ray diffraction were used to the microstructural characterization. Thermal and dilatometric analyses were used to determine the parameters and mechanisms of densification and sintering that give rise to the junctions considered. For the determination of the electrical characteristics, analysis of capacitance and polarization curves were used. Depending on the chemical compositions a variely of microstructures were obtained containing homojunctions and heterojunctions, with different densification levels and distinct varistors characteristics, that it, nonlinear behavior between voltage and electric current, with different magnitudes of switching voltages permitting to correlate the electrothermal behavior of varistors with the characteristics of homojunctions and heterojunctions considered.

La diffraction électronique en mode précession (PED) est une méthode récente d’acquisition de clichésde diffraction permettant de minimiser les interactions dynamiques. L’objectif de cette thèse est dedévelopper une méthodologie d’acquisition et de traitement des clichés de diffraction en modeprécession afin de mesurer les champs de déformation en combinant une résolution spatialenanométrique et une sensibilité inférieure à 10-3 typiquement obtenues par d’autres techniques usuellesde microscopie, telle que l’imagerie haute-résolution. Les mesures ont été réalisées sur un JEOL 2010Aéquipé du module de précession Digistar produit par la société Nanomegas.Un système modèle constitué de multicouches Si/SiGe de concentrations connues en Ge a été utilisépour évaluer les performances de la méthodologie développée dans cette thèse. Les résultats indiquentune sensibilité sur la mesure de contraintes qui atteint, au mieux, 1x10-4 et un accord excellent avec lescontraintes simulées par éléments finis. Cette nouvelle méthode a pu ensuite être appliquée sur despuits quantique d’InGaAs et sur des transistors de type Ω−gate.La dernière partie traite d’un nouvel algorithme permettant d’évaluer de manière robuste et rapide lapolycristallinité des matériaux à partir d’une mesure PED. Nous donnons des exemples d’applicationde cette méthode sur divers dispositifs / Precession electron diffraction (PED) is a recent technique used to minimize acquired diffractionpatterns dynamic effects. The primary intention of this PhD work is to improve PED (PrecessionElectron Diffraction) data analysis and treatment methodologies in order to measure the strain at thenanoscale. The strain measurement is intended to reach a 10-3 strain precision as well as usualmicroscopy techniques like high-resolution imaging. To this end, measurements were made with aJEOL 2010A with a Digistar Nanomegas precession module.The approach developed has been used and tested by measuring the strain in a Si/SiGe multilayeredreference sample with a known Ge Content. Strain measurements reached 1x10-4 sensitivity withexcellent finite element strain simulation agreement. This process has been also applied to measure thestrain in microelectronic InGaAs Quantum Well and an "Ω-gate" experimental transistor devices.The second approach developed has been made to provide a robust means of studying electrontransparent nanomaterial polycrystallinity with precession. Examples of applications of this analysismethod are shown on different devices.

La diffraction électronique en mode précession (PED) est une méthode récente d’acquisition de clichésde diffraction permettant de minimiser les interactions dynamiques. L’objectif de cette thèse est dedévelopper une méthodologie d’acquisition et de traitement des clichés de diffraction en modeprécession afin de mesurer les champs de déformation en combinant une résolution spatialenanométrique et une sensibilité inférieure à 10-3 typiquement obtenues par d’autres techniques usuellesde microscopie, telle que l’imagerie haute-résolution. Les mesures ont été réalisées sur un JEOL 2010Aéquipé du module de précession Digistar produit par la société Nanomegas.Un système modèle constitué de multicouches Si/SiGe de concentrations connues en Ge a été utilisépour évaluer les performances de la méthodologie développée dans cette thèse. Les résultats indiquentune sensibilité sur la mesure de contraintes qui atteint, au mieux, 1x10-4 et un accord excellent avec lescontraintes simulées par éléments finis. Cette nouvelle méthode a pu ensuite être appliquée sur despuits quantique d’InGaAs et sur des transistors de type Ω−gate.La dernière partie traite d’un nouvel algorithme permettant d’évaluer de manière robuste et rapide lapolycristallinité des matériaux à partir d’une mesure PED. Nous donnons des exemples d’applicationde cette méthode sur divers dispositifs / Precession electron diffraction (PED) is a recent technique used to minimize acquired diffractionpatterns dynamic effects. The primary intention of this PhD work is to improve PED (PrecessionElectron Diffraction) data analysis and treatment methodologies in order to measure the strain at thenanoscale. The strain measurement is intended to reach a 10-3 strain precision as well as usualmicroscopy techniques like high-resolution imaging. To this end, measurements were made with aJEOL 2010A with a Digistar Nanomegas precession module.The approach developed has been used and tested by measuring the strain in a Si/SiGe multilayeredreference sample with a known Ge Content. Strain measurements reached 1x10-4 sensitivity withexcellent finite element strain simulation agreement. This process has been also applied to measure thestrain in microelectronic InGaAs Quantum Well and an "Ω-gate" experimental transistor devices.The second approach developed has been made to provide a robust means of studying electrontransparent nanomaterial polycrystallinity with precession. Examples of applications of this analysismethod are shown on different devices.