Active flow control has been extensively explored in wind tunnel studies but successful in-flight implementation of an active flow control technology still remains a challenge. This thesis presents implementation of active flow control technology onboard a 33% scale Extra 330S ARF aircraft, wind tunnel studies and flight testing of fluidic actuators. The design and construction of the pulsed blowing system for stall suppression (LE actuator) and continuous blowing system for roll control (TE actuator) and pitch control have been presented. Full scale wind tunnel testing in 7̕ X 10 Oran W. Nicks low speed wind tunnel shows that the TE actuators are about 50% effective as the conventional ailerons. The LE actuator is found to be capable of suppressing stall from 12° to about 22°. Comparison of characteristics of Active elevator and conventional elevator in 3' X 4' low speed wind tunnel show that, the active elevator is as effective as of conventional elevator deflected at 5°. Flight tests show that TE actuators are able to control the aircraft in flight in banked turns. The measured roll rates in-flight support the wind tunnel test findings.

Staphylococcus aureus is one of the most important pathogens both in community- or hospital-acquired infections. The first part of this study analyzed the similarity of molecular types of S. aureus isolates cultured from nares and blood in patients with S. aureus bacteremia (SAB) by pulse-fielded gel electrophoresis (PFGE) of digested chromosomal DNA by Sma I at Kaohsiung Veterans General Hospital from August 1, 2000 through July 31, 2001. The results showed that the PFGE types of 78 (82.1%) paired nare and blood isolates of the 95 SAB patients having nasal carriage of S. aureus were clonally identical; identical in 89.7% patients of nosocomial group and 62.9% in community-acquired group. This provides the powerful evidence in close relationship between nasal carriage of S. aureus and acquisition of it in bacteremia. The data also showed that the rate of methicillin resistance occurred in SAB patients with nasal carriage in isolates of nosocomial SAB was 85.3%, and 31.3% in community-acquired group. The second part of this study analyzed the distribution of PFGE types of 163 nosocomial SAB isolates. The most predominant type was type A and composed 51.5% (84 strains) of 163 nosocomial SAB isolates. They were further divided into 7 subtypes. The second prevailing type was type B, 6.1%(10 strains). The evidence that an endemic stain (type A) occurred in >50% of nosocomial bacteremic isolates demonstrates horizontal dissemination of a single endemic strain of S. aureus in the SAB patients was common in the hospital. These results provide support for strategies to endorse more intensive procedures in infection control and to prevent systemic S. aureus infections by eliminating S. aureus nasal carriage.

Time Resolved OSL (TR-OSL) is a technique to record the luminescence decay curve data after a brief stimulation pulse and can possibly be used for the separation of luminescence signals from quartz and feldspars. In this study luminescence emission from quartz and feldspar samples was investigated. TR-OSL signals of these samples were studied for the variations with preheating and annealing temperature, stimulation pulse width and total stimulation time, optical bleaching, radiation dose and measurement temperature. TR-OSL decay lifetime of quartz samples was found as ~40 &micro / s. Na-feldspar and K-feldspar luminescence signals were deconvoluted using a linear sum of three exponential decays with lifetimes about 45 &micro / s, 8 &micro / s and 1 &micro / s and about 35 &micro / s, 7 &micro / s and 0.6 &micro / s, respectively. Since feldspars signals have a component with lifetime similar to that of quartz (~40 &micro / s), luminescence signal separation with TR-OSL seems to be not straightforward.

名古屋大学博士学位論文 学位の種類 : 博士(医学)(論文) 学位授与年月日:平成5年2月19日 竹中晃氏の博士論文として提出された

Advancements in the semiconductor industry require new materials with improved performance. With the introduction of copper as the interconnect material for integrated circuits, efficient diffusion barriers are required to prevent the diffusion of copper into silicon, which is primarily through grain boundaries. This dissertation reports the processing of high quality stoichiometric thin films of TiN, TaN and HfN, and studies their Cu diffusion barrier properties. Epitaxial metastable cubic TaN (B1-NaCl) thin films were grown on Si(001) using an ultra-thin TiN (B1-NaCl) seed layer which was as thin as 1 nm. The TiN/TaN stacks were deposited by Pulsed Laser Deposition (PLD), with the TiN thickness systematically reduced from 15 to 1 nm. Microstructural studies included X-ray diffraction (XRD), transmission electron microscopy (TEM) and high resolution TEM (HRTEM). Preliminary Cu diffusion experiments showed that the TiN seed layer thickness had little or no obvious effect on the overall microstructure and the diffusion barrier properties of the TaN/TiN stacks. Epitaxial and highly textured cubic HfN (B1-NaCl) thin films (~100 nm) were deposited on MgO(001) and Si(001) using PLD. Low resistivities (~40 mu omega-cm) were measured with a four point probe (FPP). Microstructural characterizations included XRD, TEM, and HRTEM. Preliminary Cu diffusion tests demonstrated good diffusion barrier properties, suggesting that HfN is a promising candidate for Cu diffusion barriers. Cubic HfN (B1-NaCl) thin films were grown epitaxially on Si(001) substrates by using a TiN (B1-NaCl) buffer layer as thin as ~10 nm. The HfN/TiN stacks were deposited by PLD with an overall thickness less than 60 nm. Detailed microstructural characterizations included XRD, TEM, and HRTEM. The electrical resistivity measured by FPP was as low as 70 mu omega-cm. Preliminary copper diffusion tests showed good diffusion barrier properties with a diffusion depth of 2~3 nm after vacuum annealing at 500 degrees C for 30 minutes. Additional samples with Cu deposited on top of the cubic HfN/TiN/Si(001) were vacuum annealed at 500 degrees C, 600 degrees C and 650 degrees C for 30 minutes. The diffusivity of copper in the epitaxial stack was investigated using HRTEM. The measured diffusion depths, 2 Dt , were 3, 4 and 5 nm at 500 degrees C, 600 degrees C and 650 degrees C respectively. Finally, the diffusivity of Cu into epitaxial HfN was determined to be D=D0 exp(-Q/kT)cm2s-1 with D0=2.3x10-14cm2s-1 and Q=0.52eV.

Thesis (Ph. D.)--University of Missouri-Columbia, 1999. / Typescript. Vita. Includes bibliographical references (leaves 118-123). Also available on the Internet.

Thesis (Ph. D.)--University of Missouri-Columbia, 2000. / Typescript. Vita. Includes bibliographical references (leaves 120-126). Also available on the Internet.

Thesis (Ph. D.)--University of Missouri-Columbia, 1999. / Typescript. Vita. Includes bibliographical references (leaves 118-123). Also available on the Internet.

Thesis (Ph. D.)--University of Missouri-Columbia, 2000. / Typescript. Vita. Includes bibliographical references (leaves 120-126). Also available on the Internet.

Gallium nitride (GaN) based high electron mobility transistors (HEMTs) offer numerous benefits for both direct current (DC) and radio frequency (RF) power technology due to their combination of large band gap, high electrical breakdown field, high peak and saturation carrier velocity, and good stability at high temperatures. In particular, AlGaN/GaN heterostructures are of great interest because of the unique conduction channel that develops as a result of the spontaneous and piezoelectric polarization that occurs in these layers. This channel is a vertically confined plane of free carriers that is often called a 2 dimensional electron gas (or 2DEG). Although these devices have shown an improvement in performance over previous heterostructures, reliability issues are a concern because of the high temperatures and electric fields that develop during operation. Therefore, characterizing electrical and thermal profiles within AlGaN/GaN HEMTs is critical for understanding the various factors that contribute to device failures. Little research has been performed to model and characterize these devices under RF bias conditions, and is therefore of great interest. Under pulsed conditions, a single cycle consists of an “on-state” period where power is supplied to the device and self-heating occurs, followed by an “off-state” period where no power is supplied to the device and the device cools. The percentage of a single cycle in which the device is powered is called the duty cycle. In this work, we present a coupled electro-thermo-mechanical finite-element model for describing the development of temperature, stress, and strain profiles within AlGaN/GaN HEMTs under DC and AC power conditions for various duty cycles. It is found that bias conditions including source-to-drain voltage, source-to-gate voltage, and pulsing frequency directly contribute to the electro-thermo-mechanical response of the device, which is known to effect device performance and reliability. The model is validated by comparing numerical simulations to experimental electrical curves (Ids-Vds) and experimental strain measurements performed using scanning joule expansion microscopy (SJEM). In addition, we show how the operating conditions (bias applied and AC duty cycle) impact the thermal profiles of the device and outline how the stress in the device changes through a pulsed cycle due to the changing thermal and electrical profiles. Qualitatively, the numerical model has good agreement across a broad range of bias conditions, further validating the model as a tool to better understand device performance and reliability.