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Silicon radiation detectors fabricated at the IMB-CNM (CSIC) Clean Room facilities using the most innovative techniques in detector technology are presented in this thesis. TCAD simulation comprises an important part in this work as becomes an essential tool to achieve exhaustive performance information of modelled detectors prior their fabrication and subsequent electrical characterization. Radiation tolerance is also investigated in this work using TCAD simulations through the potential and electric field distributions, leakage current and capacitance characteristics and the response of the detectors to the pass of different particles for charge collection efficiencies. Silicon detectors investigated in this thesis were developed for specific projects but also for applications in experiments which can benefit from their improved characteristics, as described in Chapter 1. Double-sided double type columns 3D (3D-DDTC) detectors have been developed under the NEWATLASPIXEL project in the framework of the CERN RD50 collaboration for the ATLAS Inner Detector upgrades and the introduction of a new pixel layer called Insertable B-Layer. The radiation tolerance of slim-edge (“edgeless”) detectors, whose current terminating structure reduces the insensitive area of detectors to 50 μm, for close-to-beam experiments like the TOTEM experiment at HL-LHC, have been simulated under the EU TOSTER project. Ultra-thin 3D detectors, which combine 3D detector technology and thin membrane fabrication process, are also studied in this work. They provide an alternative to the present Neutral Particle Analyzers at the International Thermonuclear Experimental Reactor (ITER) in the ions detection for plasma diagnosis, and they are also being used in neutron detection experiments after being covered with any layer containing 10B whose high capture cross-section of thermal neutrons allows their detection through the emitted alpha. Finally, active-edge detectors have been studied for applications in X-ray beam positioning, X-ray sensors for beamstops and detectors with pad, microstrip and Medipix2 designs for research purposes.

abstract: Chalcogenide glass (ChG) materials have gained wide attention because of their applications in conductive bridge random access memory (CBRAM), phase change memories (PC-RAM), optical rewritable disks (CD-RW and DVD-RW), microelectromechanical systems (MEMS), microfluidics, and optical communications. One of the significant properties of ChG materials is the change in the resistivity of the material when a metal such as Ag or Cu is added to it by diffusion. This study demonstrates the potential radiation-sensing capabilities of two metal/chalcogenide glass device configurations. Lateral and vertical device configurations sense the radiation-induced migration of Ag+ ions in germanium selenide glasses via changes in electrical resistance between electrodes on the ChG. Before irradiation, these devices exhibit a high-resistance `OFF-state' (in the order of 10E12) but following irradiation, with either 60-Co gamma-rays or UV light, their resistance drops to a low-resistance `ON-state' (around 10E3). Lateral devices have exhibited cyclical recovery with room temperature annealing of the Ag doped ChG, which suggests potential uses in reusable radiation sensor applications. The feasibility of producing inexpensive flexible radiation sensors has been demonstrated by studying the effects of mechanical strain and temperature stress on sensors formed on flexible polymer substrate. The mechanisms of radiation-induced Ag/Ag+ transport and reactions in ChG have been modeled using a finite element device simulator, ATLAS. The essential reactions captured by the simulator are radiation-induced carrier generation, combined with reduction/oxidation for Ag species in the chalcogenide film. Metal-doped ChGs are solid electrolytes that have both ionic and electronic conductivity. The ChG based Programmable Metallization Cell (PMC) is a technology platform that offers electric field dependent resistance switching mechanisms by formation and dissolution of nano sized conductive filaments in a ChG solid electrolyte between oxidizable and inert electrodes. This study identifies silver anode agglomeration in PMC devices following large radiation dose exposure and considers device failure mechanisms via electrical and material characterization. The results demonstrate that by changing device structural parameters, silver agglomeration in PMC devices can be suppressed and reliable resistance switching may be maintained for extremely high doses ranging from 4 Mrad(GeSe) to more than 10 Mrad (ChG). / Dissertation/Thesis / Ph.D. Electrical Engineering 2013

The ATLAS pixel detector will be upgraded with a new Insertable B-layer (IBL). The IBL will be inserted between the existing pixel detector and the reduced diameter vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have required the development of new radiation hard pixel sensor technologies and a new front end chip.3D-silicon sensors will populate 25% of the IBL sensing area. They are a newgeneration of micro-machined sensors with electrodes etched inside the silicon bulk rather than on the wafer surface. 3D-silicon sensors were studied by performing simulations, laboratory measurements and beam tests on irradiated and not irradiated samples.This thesis describes the development of a fast algorithm of the signal response in 3D-silicon sensors using Geant4 simulations. The simulation of the signal response is compared to actual data from test-beam and radioactive source measurements. The setup for each of these measurements is also simulated in Geant4 using experience gained after working with the real setup.

International Telemetering Conference Proceedings / October 20-23, 2003 / Riviera Hotel and Convention Center, Las Vegas, Nevada / A large selection of hardware and software components are readily available for supporting Internet communication in the ground network environment. These components can be used to construct very powerful and flexible communication systems. The Operating Missions as Nodes on the Internet (OMNI) project at NASA/GSFC has been defining and demonstrating ways to use standard Internet technologies for future space communication. Theses concepts and technologies are also applicable to test range telemetry applications. This paper identifies the network equipment and protocols to support end-to-end IP communication from range sensors and spacecraft instruments to end users. After identifying the end-to-end network hardware and software components, the paper discusses which ones are currently available and lists specific examples of each. This includes examples of space missions currently using Internet technology for end-to-end communication. It also lists missing pieces and includes information on their current status. The goal of this paper is also to stimulate thought and discussion on what steps need to be taken to start filling in the remaining missing pieces for end-to-end range and space network connectivity.

CERN is presently constructing the LHC, which will produce collisions of 7 TeV protons in 4 interaction points at a design luminosity of 1034 cm-2 s-1. The radiation dose resulting from the operation at high luminosity will cause a serious deterioration of the silicon tracker performance. The state-of-art silicon microstrip detectors can tolerate a fluence of about 3·1014 cm-2 of hadrons or charged leptons. This is insufficient for long-term operation in the central parts of the LHC trackers, in particular after the possible luminosity upgrade. By operating the detectors at cryogenic temperatures the radiation hardness can be improved by a factor 10. This work proposes a cryogenic microstrip detector module concept which has the features required for the upgraded LHC experiments at CERN. The module can hold an edgeless sensor, being a good candidate for improved luminosity and total cross-section measurements. The design of such a module is constrained by the requirements on radiation hardness and minimal mass. The choice of the component materials is guided by the properties of the silicon sensors, and the main criteria include best possible matching of the thermal dilatation, high thermal conductivity and appropriate elastic properties, in addition to the radiation resistance. A module design is proposed where, apart from the silicon sensor, both the support plate and the pitch adapter are processed on silicon. Future design options may also feature hybrids processed in silicon using thick-film techniques and cooling microchannels directly micromachined into the support plate. The best performance and highest degree of integration of the cooling is achieved with two-phase flow (high heat transfer coefficient) argon running through capillary pipes embedded in a CFC spacer close to the heat sources. A series of thermal tests have shown that silicon is an excellent heat spreader and its use as a structural material leads to a uniform temperature distribution in the sensor and support plate. The thermal resistance due to the glue layers dominates the thermal behaviour. The thermoelastic properties of the epoxies are key factors in the design. A series of samples were prepared to measure these properties of Araldite® 2011, Stycast® 1266 and Type L epoxies filled with fused quartz powder, as a function of temperature. Filling these epoxies reduces their thermal dilatation, nearly matching that of metals. This reduces the stress in the joints when cooling down. However, filling increases the Young modulus (E) of the epoxy so much, that the thermal stress increases with the filling factor. Furthermore, filling increases the viscosity and leads to thicker glue layers, which also increases the thermal stress in silicon. The idea of using filled epoxy was therefore abandoned. The E of unfilled epoxies at 77 K is between 4 and 8 times higher than that measured at 300 K. Thin layers of epoxy should be used to minimize the stress on the silicon substrate.Precision gluing jigs were designed and produced to assemble the prototype modules. The alignment with respect to the beam is done using a warm support plate, placed between the module and the vacuum chamber. The module is attached to this support structure through three thermally isolating precision support posts with dowels. The position of the module and its readout strips is thus accurately referred to the vacuum chamber, which itself can be aligned in the test beam line using optical targets.A first electrical prototype module was assembled using a 50 ?m pitch silicon microstrip sensor (32.5 cm2). Pitch adapter and support plate were processed on silicon. The CMS hybrid with APV25 readout chips was characterized at low temperature. First results were obtained down to 210 K, showing a decrease of the noise and the rise time and an increase of the pulse peak height with respect to the room temperature behaviour. A pair of edgeless silicon diode pad sensors was exposed to the X5 high-energy pion beam, in order to determine the edge sensitivity. A high-resistivity silicon p+-i-n+ planar diode detector (0.25 cm2) was diced through its front p+ implant to produce two halves of edgeless diode pad sensors. A large surface current on such an edge prevents the normal reverse biasing of this device but it can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment and by operating the sensor at low temperature. The gap width between the edgeless sensors, determined using the tracks measured by a reference telescope, was compared with metrology measurements. It was concluded that the depth of the dead layer is compatible with zero within the statistical accuracy of 8 µm and systematic accuracy of 6 µm.

Prévue pour 2024, une série d’améliorations doit être apportée au grand collisionneur d’hadrons du CERN (LHC) de manière à élargir son potentiel de découverte de nouvelle physique. Cette thèse se situe dans la perspective des études d’amélioration du détecteur ATLAS dans ce nouvel environnement, et concerne une nouvelle technologie monolithique HV/HR CMOS qui pourrait être utilisée pour les détecteurs de traces centraux pixélisés. Cette technologie a le potentiel de permettre la réduction de l’épaisseur des détecteurs, d'augmenter la granularité ainsi que de réduire les couts de production.Au sein de la collaboration HV/HR CMOS d’ATLAS, divers prototypes ont été développés en utilisant les technologies de différents partenaires industriels : GlobalFoundries (GF) BCDlite 130 nm et LFoundry (LF) 150 nm entre autres. Pour comprendre le comportement électrique et la capacité de détection de telles technologies, des simulations TCAD -Technology Computer Aided Design- en 2D et 3D ont été réalisées pour extraire le profil de la zone déplétée, la tension de claquage, la capacitance ainsi que la collection de charges ionisées des prototypes. Le développement de systèmes de test complexes et la caractérisation des prototypes HV/HR CMOS ont aussi été une partie du travail fourni pour cette thèse. Les programmes d’acquisition, en particulier pour ce qui concerne les tests sous protons ou auprès d’irradiateurs à rayons X, ainsi que les programmes de réglages de seuil ont été implémenté dans divers systèmes de test. Plusieurs versions des prototypes développés dans 3 technologies HV/HR CMOS différentes (AMS 0.18 μm HV, GF BCDlite 130nm et LF 150nm) ont été caractérisées. / A major upgrade to the Large Hadron Collider (LHC), scheduled for 2024 will be brought to the machine so as to extend its discovery potential. This PhD is part of the ATLAS program and aims at studying a new monolithic technology in the framework of the design of an upgraded ATLAS inner tracker. This new type of sensor is based on a HV/HR CMOS technology, which would potentially offer lower material budget, reduced pixel pitch and lower cost with respect to the traditional hybrid pixel detector concept.Various prototypes have been developed using different HV/HR CMOS technologies from several industrial partners, within the ATLAS HV/HR collaboration, for instance Global Foundry (GF) BCDlite 130 nm and LFoundry (LF) 150 nm. In order to understand the electric behavior and the detection capabilities of these technologies, 3D and 2D Technology Computer Aided Design (TCAD) simulations have been performed to extract the depletion zone profile, the breakdown voltage, the leakage current, the capacitance as well as the charge collection of the prototypes. Test setup developments and characterizations of the HV/HR CMOS prototypes were also part of this thesis. The data acquisition programs, in particular dedicated to the proton test beams, X-ray sources and threshold tuning, have been implemented into various test setups. Several HV/HR CMOS prototypes developed in three HV/HR technologies, AMS 0.18 µm HV, GF BCDlite 130 nm and LF 150 nm, have been characterized.

Dans ce travail de thèse, nous avons étudié l'effet des rayonnements ionisants (rayons X et γ) jusqu'à une dose maximale de 1 Grad sur différents types de fibres multimodes (dopées -P, -P-Ce, -Ge, -Ge-F, -Ge-Ce et -N). Les caractérisations ont été réalisées principalement avec trois techniques expérimentales : online Atténuation Induite par Radiation en temps réel (RIA), Résonance Paramagnétique Electronique (EPR), Micro-Luminescence (ML). Dans la première partie du travail de cette thèse, nous avons étudié la réponse aux radiations de différents types de fibres optiques. L'absorption liée aux défauts du phosphore induits par irradiation a été étudiée par des mesures RIA dans le domaine spectral UV-Visible. Les mesures EPR nous permis de détecter les défauts POHC, P1 et P2. En particulier, pour la détection de P1 et P2, nous avons utilisé le mode de détection de la seconde harmonique pour déterminer la cinétique de croissance des P1 et P2 en fonction de la dose. Nous avons également étudié les effets dus au changement des conditions de fibrage et ceux liés à la variation de la température d'irradiation (25-280 ° C). Nous avons aussi étudié l’effet du codopage du coeur de la fibre avec du Cérium. Dans ce cas, nous avons observé une production moins importante de centres POHC et P2 sous irradiation. De plus, les mesures EPR ont montré que la génération des défauts P1 n’est pas sensiblement influencée par le codopage avec le Cérium. En ce qui concerne les fibres optiques dopées Ge, on a étudié trois types de dopage : Ge seul, co-dopage Ge-F et Ge-Ce. Pour chaque type, nous avons examiné trois conditions de fibrage. La réponse à l’irradiation de ces fibres a été étudiée par les trois techniques utilisées. Plus particulièrement la ML, nous a permis d'obtenir une vision plus complète du rôle du codopant et des précurseurs dans la formation des défauts induits par l'irradiation. Nous avons également étudié la réponse au rayonnement de la fibre dopée N avec trois différentes conditions de fibrage. Les réponses à l’irradiation dans les régions spectrales UV-visible ont été obtenues par des mesures RIA. Par EPR, nous avons pu détecter deux défauts liés à l'azote pour les doses élevées de radiation. Enfin, les mesures ML sur les fibres irradiées ont montré trois bandes d'émission dans le visible qui ont été attribuées clairement à des centres émetteurs liés à l'azote. Dans la deuxième partie de la thèse, nous avons étudié les effets liés au chargement en oxygène des fibres étudiées. Par des mesures en microspectroscopie Raman, nous démontrons qu'un traitement à haute température et haute pression peut favoriser l’introduction d’une grande quantité de O2 dans les fibres optiques à cœur de silice pure (PSC) ou dopées F, Ge ou P. Les réponses à l’irradiation de certaines des fibres optiques chargées en O2 ont été étudiés (et en particulier PSC et celle dopée F. Sur la base des données de la littérature, nous avons effectué les décompositions des spectres RIA en fonction de la dose. De plus, l'étude EPR des fibres optiques dopées P et chargées en O2 a montré une forte réduction des défauts P1 et P2 comparées aux fibres non traitées. Dans cette partie de la thèse, j’ai également présenté les résultats concernant la radioluminescence infrarouge (1272 nm) des molécules O2 dans la fibre optique. La faisabilité d'un capteur de radiation pour des environnements sous fortes doses et forts débits de dose a été discutée / In this Thesis work we have investigated the effect of ionizing irradiation (X and γ rays) up to 1 Grad on different types of multimode optical fibers (P-doped, P-Ce-doped , Ge-doped, Ge-F-doped, Ge-Ce-doped, and N-doped). The experiments were carried out by three main experimental techniques: online Radiation Induced Attenuation (RIA), Electron Paramagnetic Resonance (EPR) and Confocal Micro-Luminescence (CML). In the first part of the Thesis work we report on the radiation response of several types of optical fibers. The absorption due to radiation induced P-related defects was studied by RIA in the UV-Visible domain. Moreover, by EPR measurements we were able to detect POHC, P1 and P2 defects. In particular, for the detection of P1 and P2 defects we have validated the use of EPR second-harmonic detection mode which allowed us to obtain the growth kinetics of P1 and P2 with the dose. The effects due to the variation of the drawing conditions of the fibers were investigated as well as the ones due to the change of the temperature of irradiation (from 25 to 280 °C). Finally, concerning the P-doped OFs, we report on the effects due to the Cerium codoping of the core of the optical fiber. We observed a reduced generation of POHC and P2 centers under irradiation. However, EPR investigation has shown that the generation of P1 defects is essentially unaffected by the Ce-codoping. Regarding Ge-doped optical fibers we report on three basic typologies: Ge-doped, Ge-F-doped and Ge-Ce-doped. For each fiber typology we investigated three drawing conditions. The radiation responses of these fibers were characterized by RIA and EPR measurements. Furthermore, performing CML measurements we were able to obtain further insight on the role of the co-dopants and of the defect precursors in determining the radiation induced defects. We have also investigated the radiation response of N-doped OFs (three drawing conditions). The radiation responses in the UV-Visible domains were obtained by RIA, and by EPR measurements we were able to detect the signals of two N-related defects at high radiation doses. Finally, CML measurements on irradiated samples have shown three emission bands in the visible domain which are tentatively assigned to N-related centers. In the second part of the Thesis we report on the effects of an O2 loading treatment produces on some of the investigated samples. By micro-Raman measurements we demonstrate that a high pressure high temperature treatment can incorporate high quantity of O2 into Pure-Silica-Core (PSC), F, Ge and P doped optical fibers. The radiation responses of some of the O2-loaded optical fibers were investigated with particular regard to the fluorine doped and pure-silica-core optical fibers. On the basis of literature data we performed band decompositions of the RIA spectra as a function of the dose. Moreover, the EPR study of the O2 loaded P-doped optical fiber have shown a strong reduction of the signals associated to the P1 and P2 defects as compared to the untreated fibers. In this part of the thesis we also report on the characterization of the near infrared radioluminescence (1272 nm) of O2 molecules embedded in the optical fiber matrix and the feasibility of a radiation sensor based on this phenomenon for environments characterized by high radiation doses and high dose-rates