This thesis proposes a multifaceted production test and post-manufacture yield enhancement framework for RF systems. This framework uses low-cost test and post-manufacture calibration/tuning techniques. Since the test cost and the yield of the RF circuits/sub-system directly contribute to the manufacturing cost of RF systems, the proposed framework minimizes overall RF systems' manufacturing cost by taking two approaches. In the first approach, low-cost testing methodologies are proposed for RF amplifiers and integrated RF substrates with an embedded RF passive filter and interconnect. Techniques are developed to test RF circuits by the analysis of low-frequency signal of the order of few MHz and without using any external RF test-stimulus. Oscillation principles are used to enable testing of RF circuits without any external test-stimulus. In the second approach, to increase the yield of the RF circuits for parametric defects, RF circuits are tuned to compensate for a performance loss during production test using on-board or on-chip resources. This approach includes a diagnosis algorithm to identify faulty circuits within the system, and performs a compensation process that adjusts tunable components to enhance the performance of the RF circuits. In the proposed yield improvement methodologies, the external test stimulus is not required because the stimulus is generated by the RF circuit itself with the help of additional circuitry and faulty circuits are detected using low-cost test methods developed in this research. As a result, the proposed research enables low-cost testing and self-healing of RF systems.

A novel experimental setup has been realized to measure weak magnetic moments which can be modulated at radio frequencies (~1–5 MHz). Using an optimized radio-frequency (RF) pickup coil and lock-in amplifier, an experimental sensitivity of 10 -15 Am2 corresponding to 10 -18 emu has been demonstrated with a one second time constant. The detection limit at room temperature is 9.3 10 -16 Am2/√Hz limited by Johnson noise of the coil. In order to demonstrate the sensitivity of this technique it was used to electrically detect the polarized spins in semiconductors in zero applied magnetic fields. For example in GaAs, the magnetic moment due to a small number (~ 7 x 108) of spin polarized electrons generated by polarization modulated optical radiation was detected. Spin polarization was generated by optical injection using circularly polarized light which is modulated rapidly using an electro-optic cell. The modulated spin polarization generates a weak time-varying magnetic field which is detected by the sensitive radio-frequency coil. Using a radio-frequency lock-in amplifier, clear signals were obtained for bulk GaAs and Ge samples from which an optical spin orientation efficiency of ~ 10–20% could be determined for Ge at 1342 nm excitation wavelength at 127 K. In the presence of a small external magnetic field, the signal decayed according to the Hanle Effect, from which a spin lifetime of 4.6 ± 1.0 ns for electrons in bulk Ge at 127 K was extracted. The spin dynamics in n-Ge was further explored and the temperature dependence of the spin lifetime was plotted for a temperature range of about 90 K to 180 K. The temperature dependence of the optical pumping efficiency was also measured though no quantitative conclusions could be derived. The signals observed for semi-insulating GaAs, n-GaAs, GaSb and CdTe which are direct gap semiconductors are much larger than expected (almost two orders of magnitude). An attempt was made to explain this unexpected behavior of these direct gap semiconductors using the spin hall effect.