Not available

Frankfurt (Main), Univ., Diss., 2009 / Erscheinungsjahr an der Hauptitelstelle: 2008

Thesis (doctoral)--University of Konstanz, 2004. / Includes bibliographical references (p. 157-173).

No description available.

published_or_final_version / Physics / Doctoral / Doctor of Philosophy

No description available.

Thesis (Ph. D.)--University of Hong Kong, 1997. / Includes bibliographical references (leaves 90-91).

Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

Neste trabalho foram crescidos filmes finos de oxinitreto de silício (SiOxNy) por processamento térmico rápido (RTP) utilizando um forno térmico convencional adaptado, objetivando fabricar células solares MOS com baixo custo agregado e bom rendimento de conversão de baixas intensidades luminosas em energia elétrica de forma reprodutível. A receita de oxinitretação otimizada foi desenvolvida em ambiente misto de 5N2:1O2 na temperatura de 850°C para tempos de processo, na faixa de 10 a 80s seguido por uma passivação em 2L/min de N2 por 80s. Os dielétricos crescidos foram caracterizados fisicamente quanto à espessura (entre 1,50 e 2,95nm), à microrugosidade (<0,95nmRMS) e à concentração de nitrogênio (1,0-2,1%atm). As características de tunelamento foram investigadas em capacitores MOS e apontaram para a existência de armadilhas interfaciais do tipo K capazes de armazenar cargas positivas. Nas células solares MOS, a corrente de fundo foi característica para todos os processos de oxinitretação empregados (~0,5-2µA/cm2) e apresentaram níveis de resposta à luz incidente na faixa de 1 a 8mA/cm2 compatível com aplicações de conversão de energia em ambientes internos e externos (energy harvesting). A característica densidade de corrente x tensão de porta (JxVG) das células solares apresentou um comportamento aproximadamente linear desde a densidade de corrente de curto-circuito (JSC) até a tensão de curto-circuito (VOC) implicando em potência gerada máximas (PGmáx) de até centenas de µA/cm2 para VG ? VOC/2 para uma ampla faixa de intensidade radiante incidente (11,8 - 105,7mW/cm2) alcançando rendimentos de conversão de até 5,5%. / In this work, silicon oxynitrides (SiOxNy) were grown by means of a homemade Rapid Thermal Processing (RTP). The goal was to manufacture MOS solar cells with a reduced price and reasonable light conversion efficiency for low light intensity. The optimized oxidation recipe consisted of using an environment with gas mixture of 5N2:1O2 at a temperature of 850°C and different processing times in the range of 10 to 80s followed by a passivation step in ultrapure N2 (2L/min) at the same temperature of 850oC for 80s. The oxynitrides were grown with thickness in the range of 1.50 to 2.95nm with surface microroughness lower than 0.95nmRMS and nitrogen concentration in the range of 1.0 to 2.1%atm. The tunneling characteristics were studied with the aid of MOS capacitor and K-type interfacial traps related to Si(p)/Si?N structure were detected positively charged for VG > 0. The background current in the MOS solar cells (~0.5-2µA/cm2) were similar for all samples and the current response to the incident light was in the range of 1 to 8mA/cm2, which is compatible with energy conversion for indoor and outdoor environments (energy harvesting). The current density x gate voltage (JxVG) characteristics of the MOS solar cells presented a nearly linear behavior since the short-circuit current density (JSC) till to the open circuit voltage (VOC) so that the maximum generated power was of hundreds of µA/cm2 for VG ? VOC/2 for a large range of radiant intensities (11.8 - 105.7 mW/cm2) and achieving efficiency conversion up to 5.5%.

In this thesis, the lithium tantalite [LiTaO3, abbreviated to LT] thin films were deposited on Pt/Ti/SiO2/Si substrates by spin coating with sol-gel processing and rapid thermal processing. 1,3 propanediol was used as solvent to minimize the number of cycles of spin coating and drying processes to obtain the desired thickness of thin film. By changing the heating rate (600~3000¢J/min) and the heating temperature (500~800¢J), the effects of various processing parameters on the thin films growth are studied. In addition, the thermal isolation of detecting elements was achieved by the anisotropic wet etching of back silicon substrate. In order to reduce the thermal mass and thermal time constant of detector, the sensing element was built-up on a thin membrane. By changing the membrane thickness (20~350 £gm), the effects of various membrane thickness on the response of pyroelectric IR detector devices are studied also. Experimental results reveal that the heating rate will influence strongly on grain size, dielectricity, ferroelectricity and pyroelectricity of LT thin films. With the increase of heating rate, the grain size of LT thin film decreases slightly, and the c-axis orientation is enhanced. The relative dielectric constant (£`r ) of LT thin film increases from 28 up to 45.6, the dielectric loss (tan