Self-Consolidating concrete (SCC) is a new generation of concrete that can fill in the formwork under its own weight and without vibration. This modern technology has revolutionized the construction industry, but still needs lots of investigation before it reaches its most perfect level. Stability is a crucial property of SCC, namely self-consolidation cannot be achieved without it. Generally, stability falls into two categories: static stability which is important when concrete is at rest and before setting and is well studied up to this date; dynamic stability which plays a crucial role during transportation and casting of SCC and is one of the least investigated aspects of SCC. Hence, this M.Sc. project was defined with the purpose of developing a comprehensive understanding of the dynamic segregation phenomenon. An experimental approach was adopted, namely reliable test methods were proposed to evaluate the dynamic stability of SCC. Repeatability assessment and sensitivity analysis are established for the proposed tests. Once a reliable test has been developed, the test is used to evaluate the effect of different parameters that could affect dynamic segregation. The latter includes factors pertaining to both mix design and casting conditions. To capture the horizontal spread, Tilting-box was developed and was shown to have adequate repeatability and sensitivity. In order to make the test more practical, a new penetration technique was also proposed to help assess the segregation more easily and rapidly. Good agreement was observed between the results of wet-sieving and penetration. With respect to freefall, U-tube was designed and found to be promising to simulate the phenomena taking place during and shortly after freefall. Results of the parameter study carried out with T-box demonstrate that the larger the number of cycles (flow distance), the more dynamic segregation occurs while the rate of segregation decreases. When decreasing the duration of each cycle (increasing flow velocity), segregation first increases, but over a critical duration it starts to decrease. Considering the rheology of concrete (cement paste), it is shown that both yield stress and viscosity have significant effects on dynamic segregation. In addition, there is no interaction between the effects of each factor, and such influence is non-linear. The effect of paste volume on dynamic segregation is similar to that of velocity meaning that by increasing paste volume, segregation first increases and above a critical value, it commences to decrease. The outcome of the parameter study conducted with U-tube shows that in terms of rheology, though the results are analogous to the T-box, there are some inconsistencies which could be due to both errors and limitations. Hence, at this point no final conclusion is drawn on that. Considering the paste volume, the same tendency as that during flow was observed.

Au cours de ces travaux de thèse, nous avons étudié la redistribution atomique de contaminantsmétalliques dans le silicium et au voisinage d'une interface SiO2/Si. Pour mener à bien cetteétude, trois techniques de caractérisation complémentaires ont été utilisées (TEM,APT,SIMS).Nous avons dans un premier temps étudié la diffusion ainsi que la ségrégation d'équilibre de contaminants à une interface SiO2/Si, et plus particulièrement, la diffusion du W et du Mo. Le Wprésente une cinétique de diffusion extrêmement lente. Les caractérisations réalisées par TEM et APT nous ont permis de discuter les profils de concentrations mesurés par SIMS et nous ont guidés dans le choix du modèle de diffusion proposé. L'étude de la diffusion du Mo révéle que cette espèce présente une limite de solubilité faible dans le silicium et une forte interaction avec des défauts d'irradiation, provoquant sa précipitation.Dans un second volet, nous nous sommes intéressés à l'effet d'une interface mobile, lors d'une réaction, sur la redistribution atomique des contaminants proches de cette interface. Nous avons ainsiréalisé une étude comparative des comportements du Fe et W lors de procédés d'oxydation.Le tungstène précipite dans le volume et est progressivement rejeté par l'oxydation. Le ferprécipite à l'interface SiO2/Si, provoquant un effet de masquage dont nous avons montré qu'il étaitresponsable de la formation de défauts pyramidaux d'interface, caractéristiques d'une contaminationen fer du silicium. Le procédé de germano-siliciuration de nickel, réalisé à basses températures a également été investigué. Cette réaction provoque le rejet 3D du germanium à l'interface NiSiGe/SiGe. / During this thesis work, we studied the atomic redistribution of metallic contaminantsin silicon and near a SiO2/Si interface. To conduct this study, we used three complementary characterisation techniques : transmission electron microscopy (TEM), atomic probe tomography (APT) and secondary ion mass spectrometry (SIMS).We first studied the diffusion and equilibrium segregation of various contaminants at a SiO2/Si interface, and more particularly, the diffusion of W and Mo. W exhibits a very slow diffusion kinetic.Physico-chemical characterizations performed by TEM and APT allowed discussing the concentrationprofiles obtained by SIMS leading to the diffusion model that we proposed. The study of Mo diffusionrevealed that this specy exhibits a low solubility limit in silicon and strongly interacts with irradiation-induced defects, leading to its precipitation.In a second phase, we studied the effect of a mobile interface, during a reaction, on the atomic redistribution of contaminants near this interface. We performed a comparative study of the behaviourof Fe and W during oxidation processes. W precipitates in the silicon substrate and is progressivelyrejected (snowplow) by the oxidation. Fe preferentially precipitates at the SiO2/Si interface. Theseprecipitates mask a part of the silicon substrate and thus hinder its oxidation, leading to the formation of characteristics pyramidal-shaped defects at the interface. Low temperature nickel germano-silicide formation have also been investigated. This reaction leads to the 3D snowplow of germanium atoms at the NiSiGe/SiGe interface.