Taiwan semiconductor manufacturing industry ranks top in the world for the production and has a great contribution to Taiwan economics. However, the industry produces a significant amount of volatile organic compounds (VOC) into the air. According to EPA of Taiwan, the annual VOC emission amounts from the industry were approximately five thousand tons, a major stationary source of VOC emission. The EPA has implemented the air pollution control regulation for semiconductor industry, in which the VOC emission amount should be below <0.6 kg/hr or the removal efficiency should be >90% for each factory . The conventional control technologies for the VOC emissions was concentration using zeolite followed by thermal oxidation. However, the high boiling points of VOC is difficult to desorbed from zeolite and it required the water to wash the zeolite. This would reduce the removal efficiency of zeolite. This control processes have high operation cost and may produce byproducts required for further treatment. Advanced chemical oxidation process (AOP) recently has gained tremendous attention as an emerging control technology of VOC due to low treatment cost and few oxidation byproducts. The major oxidant of the technology is believed to be hydroxyl radicals, which can react organic compounds at very reaction rates. A majority of VOC emissions from the semiconductor industry are highly soluble and can be easily dissolved into water by scrubbing process. However, the wet scrubbing process can produce a significant amount of wastewater. The objective of this study was to investigate the feasibility of using wet scrubber and O3/H2O2/catalyst process on controlling the VOC emissions from the semiconductor manufacturing industry. A full scale of process of 1000 CMM flowrate was designed and built along with a semiconductor packaging facility. Results showed that major compounds of the VOC exhaust were iso-propanol, PGMEA, PGME and methyl ethyl keton. The inlet concentrations of THC significantly varied from 50 to 600 ppmv as methane. The AOP process can removed 90-95% of VOCs and the scrubbing water can be recycled and reused at least 95%. The capital cost of the system was NT20,000,000 with the annual operation cost of NT120,000 which was only 36-40% of it for the concentration using zeolite followed by thermal oxidation.

2008, the subprime mortgage of America caused the global financial crisis since 1930. The semiconductor company, Qimonda claimed bankrupt protection due to final issue. Most semiconductor companies including DRAM, IDM were hurt deeply by the financial crisis. This study researches by interviewing and referring the related documentation to understand the semiconductor industry¡¦s history and current situation. And provide the possible management strategies while the financial crisis occurring.

As VLSI technology scales to 65nm and below, traditional communication between design and manufacturing becomes more and more inadequate. Gone are the days when designers simply pass the design GDSII file to the foundry and expect very good man¬ufacturing and parametric yield. This is largely due to the enormous challenges in the manufacturing stage as the feature size continues to shrink. Thus, the idea of DFM (Design for Manufacturing) is getting very popular. Even though there is no universally accepted definition of DFM, in my opinion, one of the major parts of DFM is to bring manufacturing information into the design stage in a way that is understood by designers. Consequently, designers can act on the information to improve both manufacturing and parametric yield. In this dissertation, I will present several attempts to reduce the gap between design and manufacturing communities: Alt-PSM aware standard cell designs, printability improve¬ment for detailed routing and the ASIC design flow with litho aware static timing analysis. Experiment results show that we can greatly improve the manufacturability of the designs and we can reduce design pessimism significantly for easier design closure.

In this thesis, We have fabricated 1.55

A new equivalent circuit model for IGBT is presented. It takes into account both electron and hole conduction in sensors and is incorporated with SPICE3 for the simulation of three types of current sensors, namely active, bipolar, and MOS sensors. It adopts a multi-MOS model to include the doping variation in the MOS body. The results agree well with the current sensing measurements within an average error of 4.4%.

ABSTRACT A DIP (dual-in-line) laser diode module packaging by soldering technique was investigated. We made high coupling efficiency fiber lens under the best arc fusing conditions. The coupling efficiency of fiber lens was obtained 82%, while offset of fiber lens center was less than 0.5mm and curvature radius was about 9mm. We metallized the high coupling efficiency fiber lens, and packaged it in the DIP housing. The components inside the module were uncoated FP (Fabry-Perot) laser chip, p-i-n detector, substrate, and cooler. We made a package process as follows: 1) We utilized the heating apparatus to fix the FP laser, PIN detector, and thermistor on the substrate. 2) We utilized the heating apparatus to make the cooler fixed on the DIP housing and the substrate fixed on the cooler. 3) We utilized the electrothermal heating machine to melt 1.5mm3 indium wire and adjusted the fiber lens by tweezer to couple light into the fiber inside the DIP housing. We obtained the 2.93mW output power and 58.6% coupling efficiency after packaging. The post-soldering-shift resulted from the indium solidification was the most important factor affecting the coupling efficiency. By improving substrate design properly, we could reduce the indium quantity to minimize the solidification effect. The post-soldering-shift should be controlled below 1mm in the transverse axis and below 10 mm in the longitudinal axis, respectively. Finally, We achieved an external cavity fiber grating laser module with 2mW output power, and got an open eye pattern after measuring the DIP transmitter module.

The yield of Taiwan's semiconductor industry has reached the mark of NT$900 billion in year 2002 after two decades of efforts. In fact, Taiwan has ranked the world fourth in production scale of semiconductor and played a crucial role in this industry worldwide. Mainland China is with the advantages of significant domestic market, inexpensive labor, and productive land. Moreover, preferential tariff, therefore, it is a market with great incentive to the general public. The semiconductor industry is in an early stage in Mainland China. However, international corporations are willing to invest and build up semiconductor industry there, therefore, it is a market with potentials. Taiwan's semiconductor industry is with industrial cluster effect and with sufficient experience in manufacturing process and business operation. That operation is beyond the reach of Mainland China. Taiwan and Mainland China share the same culture. Therefore, Taiwan understands Chinese market and management better than Europe, America, and Japan. Mainland China represents a great opportunity to Taiwan. However, it may become a threat if a responsive strategy is not formed properly.

<p>This licentiate thesis deals with the electronic and geometrical properties of metal-semiconductor and organic-semiconductor interfaces investigated by photoelectron spectroscopy and scanning tunneling microscopy. </p><p>First in line is the Co-InAs interface (metal-semiconductor) where it is found that Co is reactive and upon adsorption and thermal treatment it alloys with the indium of the substrate to form metallic islands, about 20 nm in diameter. The resulting broken bonds causes As entities to form which are loosely bond to the surface and evaporate upon thermal treatment. Thus, the adsorption of Co results in a rough interface. </p><p>Secondly the metal-free phthalocyanine (H₂PC) - titanium dioxide interface (organic-semiconductor) is investigated. Here it is found that the organic molecules arrange themselves along the substrate rows upon thermal treatment. The interaction with the TiO₂ is mainly with the valence Π-electrons in the molecule causing a relatively strong bond, but this interaction is short range as the second layer of molecules retains their molecular character. This results in an ordered adsorption but limited mobility of the molecules on the surface prohibiting well ordered close packed layers. Furthermore, the hydrogen atoms inside the cyclic molecule leave the central void upon thermal treatment.</p><p>The third case is the H₂PC-InAs/InSb interface (organic-semiconductor). Here ordered overlayer growth is found on both substrates where the molecules are preferentially adsorbed on the In rows in the [110] direction forming one-dimensional chains. The InSb-H₂PC interface is found to be weakly interacting and the bulk-like molecular character is retained upon both adsorption and thermal treatment. On the InAs-H₂PC interface, however, the interaction is stronger. The molecules are more affected by the surface bond and this effect stretches up a few monolayers in the film after annealing.</p>

Thesis (Ph. D.)--Lehigh University, 2001. / Includes vita. Includes bibliographical references (leaves 96-105).

Thesis--PlanB (M.S.)--University of Wisconsin--Stout, 2001. / Includes bibliographical references.