Vertical cavity surface emitting laser (VCSEL) structures have been grown by both metal-organic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE). These incorporate 3 strained InGaAs / GaAs quantum wells placed resonantly in a two wavelength long optical cavity, formed between AlAs / GaAs quarter wave dielectric reflector stacks through which current is injected. The reflection spectra of these stacks is studied in detail; the effects on the laser threshold gain of absorption due to impurities and of errors in growth are investigated. Methods of disruption of the AlAs / GaAs heterointerfaces have been used to reduce the operating voltage. The completed designs use 200A intermediate layers containing 30 or 50% aluminium or a superlattice graded region simpler than that used in previous designs. The effectiveness acceptor dopants; Be in MBE, C and Zn in MOCVD; is studied also. Modulation doping was employed to reduce the effects of optical absorption. Devices were fabricated into mesas by SiC14 reactive ion etching or defined by proton implant isolation. MBE grown devices were resonant at wavelengths in the range 950 to 1059mn with essentially constant (at —1020nm) eihhi transition energies in the wells. A detailed study of the wavelength variation of threshold current density Jth (X)was made. A minimum of 366A.cnr2 was measured at 1018nm in mesa devices. A similar relation is found for ion-implanted devices but the minimum is increased to 535A.cm-2 by incomplete isolation. Gain calculations, including strain effects, are used to explain the Jth(X) variation. Implanted devices offer superior c.w. performance due to reduced thermal and ohmic resistances. The relative offset between the gain spectrum and cavity resonance was examined for c.w. operation. It was found that carrier thermal effects limit the output power rather than shifts in the offset. The bias voltage of MOCVD grown devices is as low as 1.7V and the threshold current is as low as 764A.cm-2. This is higher than for MBE grown devices because of growth thickness errors and non-optimal alignment of the gain spectrum and cavity mode. The uniformity in emission wavelength is ±1% over 80% of a 2 inch diameter wafer, offering suitability for very large uniform arrays.

Gas sensitive semiconductors have been known for many years and applied in static gas alarm systems for the monitoring of hazardous gases, however, their application has been limited by a lack of selectivity. In this work a semiconducting gas sensor has been configured for use as a gas chromatographic detector thus combining the sensitivity of semiconductor sensors with the selectivity of gas chromatography. The study has been confined to tin oxide devices, more specifically the Taguchi gas sensor (TGS) . The majority of this work has concentrated on the TGS 813 although the use of other TGS is described. The development of suitable instrumentation is described and rigorous optimisation of the operating parameters e.g. heater voltage and column temperature has been performed using the variable step size simplex technique. Attention was concentrated on the response of the TGS 813 to hydrogen which was used as a test gas. A novel figure of merit, response multiplied by retention time and divided by skew factor was designed so that optimum response was obtained whilst maintaining adequate chromatographic separation. Optimum conditions were verified by univariate searches and the response was observed to be most dependant upon heater voltage. A limit of detection of 20 ppb v/v of hydrogen in a 1 ml sample was obtained at optimal conditions. Illustrative analyses of hydrogen were performed in human breath and laboratory air with results found to be in close agreement with literature values. Calibration was found to be linear over at least three orders of magnitude. The response of the TGS 813 to low molecular weight alkanes has also been investigated. It was observed that different heater voltage optima existed for each of the C1-C5 alkanes and that the sensor was relatively more sensitive to the higher molecular weight compounds. As with hydrogen linear response was obtained over at least three orders of magnitude and an illustrative analysis of natural gas showed excellent agreement with known levels. A compromise optimum heater voltage was used to study the response of the TGS 813 to alcohols, aldehydes, ketones and some Cs hydrocarbons. Capillary columns were used in this investigation and it was noted that they had potentially wider application than packed columns due to the use of an inert carrier with an air make-up flow to the detector. This replaced the air carrier gas used previously which might degrade certain stationary phases. Three different types of TGS: the 813; 822 and 831 were used in a study of the response and skew factor for the detection of halogen-containing compounds. Very high skew factors were often observed, although, for some compounds it appeared that symmetrical peaks could be obtained within narrow heater voltage ranges. Skewed response was observed to be dependant upon sensor type, heater voltage and halogen proportion and type. Analysis of the three sensor types was performed and differences in potential surface area and tin oxide additives observed. The presence of additives was observed to adversely affect sensor recovery.

No description available.

No description available.

No description available.

No description available.

No description available.

No description available.

No description available.

No description available.