Global ETD Search

261	Optical bistability in semiconductor waveguides Aitchison, J. Stewart January 1987 (has links) No description available. 530.41 Semiconductor waveguides
262	Regenerative oscillations and electrically induced bistable switching in an InSb etalon Ronaldson, David Campbell January 1991 (has links) No description available. 530.41 Semiconductor optics
263	Nonlinear studies of semiconductors and molecular gases with an optically pumped laser Mitchell, Keith William January 1988 (has links) No description available. 535 Semiconductor laser studies
264	Neutron scattering studies of amorphous materials Brunier, Thierry Marcel January 1990 (has links) No description available. 530.41 Semiconductor physics
265	An integrated micromachined 1.6THz Schottky diode mixer Wootton, Simon T. G. January 1998 (has links) No description available. 621.31042 Semiconductor fabrication
266	Electrical and thermal modelling of power semiconductor devices using numerical methods Walker, Philip January 1988 (has links) No description available. 621.31042 Semiconductor devices design
267	The fabrication and analysis of ohmic and Schottky contacts for N-type MESFETs and HEMTs Hunt, Tim D. January 1992 (has links) No description available. 621.31042 Metal-semiconductor contacts
268	Influence of gases on the electrical properties of MIS devices Evans, N. J. January 1986 (has links) This thesis studies the effects of gas ambients on the electrical properties of the insulator-semiconductor interface of a MIS capacitor. A microcomputer-controlled instrumentation system has been developed to extract this information from measurement of the a.c. admittance of MOS or MIS devices. The system incorporates several novel developments in circuitry and software which enable these admittance data to be automatically collected and processed in the frequency domain by remote recalibration of the instrumentation. This advancement permits interface state density information to be calculated more quickly and accurately than has been previously possible using manually-operated equipment. The system has been used to investigate the influence of gases on the density of interface states in a MIS capacitor, in particular the palladium/silicon dioxide/silicon structure which is sensitive to hydrogen gas. A distinct change in the distribution of surface state density across the silicon bandgap has been observed upon exposure to a hydrogen ambient. An alternative insulating layer, an organic Langmuir-Blodgett film multilayer of ω-tricosenoic acid, has been characterised and examined, and increased sensitivity of this structure to hydrogen gas has been indicated. 530.41 Metal-insulator-semiconductor
269	A investigation of the manufacture and characterisation of enhancement-type buried channel M.O.S. transistors Morgan, Fearghal John January 1986 (has links) No description available. 530.41 Semiconductor technology
270	Linewidth enhancement factors of short external cavity semiconductor lasers / Nguyen, An Hoang. January 1999 (has links) Thesis (Ph.D.) -- McMaster University, 1999. / Includes bibliographical references (leaves 72-77). Also available via World Wide Web. Semiconductor lasers. Spectrum analysis.

Search results