261 |
Optical bistability in semiconductor waveguidesAitchison, J. Stewart January 1987 (has links)
No description available.
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262 |
Regenerative oscillations and electrically induced bistable switching in an InSb etalonRonaldson, David Campbell January 1991 (has links)
No description available.
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263 |
Nonlinear studies of semiconductors and molecular gases with an optically pumped laserMitchell, Keith William January 1988 (has links)
No description available.
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264 |
Neutron scattering studies of amorphous materialsBrunier, Thierry Marcel January 1990 (has links)
No description available.
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265 |
An integrated micromachined 1.6THz Schottky diode mixerWootton, Simon T. G. January 1998 (has links)
No description available.
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266 |
Electrical and thermal modelling of power semiconductor devices using numerical methodsWalker, Philip January 1988 (has links)
No description available.
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267 |
The fabrication and analysis of ohmic and Schottky contacts for N-type MESFETs and HEMTsHunt, Tim D. January 1992 (has links)
No description available.
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268 |
Influence of gases on the electrical properties of MIS devicesEvans, N. J. January 1986 (has links)
This thesis studies the effects of gas ambients on the electrical properties of the insulator-semiconductor interface of a MIS capacitor. A microcomputer-controlled instrumentation system has been developed to extract this information from measurement of the a.c. admittance of MOS or MIS devices. The system incorporates several novel developments in circuitry and software which enable these admittance data to be automatically collected and processed in the frequency domain by remote recalibration of the instrumentation. This advancement permits interface state density information to be calculated more quickly and accurately than has been previously possible using manually-operated equipment. The system has been used to investigate the influence of gases on the density of interface states in a MIS capacitor, in particular the palladium/silicon dioxide/silicon structure which is sensitive to hydrogen gas. A distinct change in the distribution of surface state density across the silicon bandgap has been observed upon exposure to a hydrogen ambient. An alternative insulating layer, an organic Langmuir-Blodgett film multilayer of ω-tricosenoic acid, has been characterised and examined, and increased sensitivity of this structure to hydrogen gas has been indicated.
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269 |
A investigation of the manufacture and characterisation of enhancement-type buried channel M.O.S. transistorsMorgan, Fearghal John January 1986 (has links)
No description available.
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270 |
Linewidth enhancement factors of short external cavity semiconductor lasers /Nguyen, An Hoang. January 1999 (has links)
Thesis (Ph.D.) -- McMaster University, 1999. / Includes bibliographical references (leaves 72-77). Also available via World Wide Web.
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