Thesis (Ph.D.) -- McMaster University, 1998. / Includes bibliographical references. Also available via World Wide Web.

19 Dec 2004. / Published through the Information Bridge: DOE Scientific and Technical Information. "IS-T 2082" Henry Hao-Chuan Kang. 12/19/2004. Report is also available in paper and microfiche from NTIS.

Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Ray T. Chen. Vita. Includes bibliographical references.

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The objectives of the research undertaken have been to investigate the properties of semiconductor lasers operating at around 1.3 mum. The aim of the investigation is to suggest modifications which give rise to improved operating characteristics especially in the high temperature (approaching 85 °C) range. The investigation can be divided into 2 sections: a theoretical approach and an experimental section. The theoretical study examined the performance of compressively strained InGaAsP/InP multiple quantum-well lasers emitting at 1.3 mum in order to investigate the important factors and trends in the threshold current density and differential gain with strain, well width and well number. Structures with a fixed compressive strain of 1% but variable well width, and also with a fixed well width but variable strain from 0% to 1.4% have been considered. It has been found that there is little benefit to having compressive strains greater than 1 %. For structures with a fixed 1% compressive strain and unstrained barriers, an optimum structure for lowest threshold current density and a high differential gain has been found to consist of six 35 A quantum-wells. In addition, compensated strain (CS) structures with compressive wells and tensile barriers have been examined. It is shown that the conduction band offset can be significantly increased and the valence band offset reduced in such structures, to give band-offset ratios comparable with aluminium based 1.3 mum devices. The gain calculations performed suggest that there is little degradation in the threshold carrier density or differential gain due to these alterations in the band offsets; and hence a better laser performance is expected due to a reduction in thermal leakage currents due to the improved electron confinement. The experimental study concentrates on looking at certain key design parameters to investigate their effect on the laser performance. These design parameters range from the number of quantum-wells to the device length. The experimental study confirms the conclusions drawn in the theoretical investigation that the optimum structure for a 1.3 mum InGaAsP laser for low threshold current, high efficiency and high characteristic temperature operation consists of six 1% compressively strained 50 A quantum-wells in a device of medium length (approx. 450 mum). The inclusion of a high reflection coating on one facet provides further improvement in the device performance, but increases the production cost dramatically. Also investigated in the experimental section is the effect of changing the device material from InGaAsP to InGaA1As. The results discussed do not offer firm evidence of any improvement in the device characteristics in switching from a P-based to an Al-based structure. This is mainly due to the added complication of switching to a RWG structure from a BH structure. Another explanation for the relatively poor performance of InGaAsP 1.3 mum lasers has been examined. That is leakage of the carriers out of the well region. Evidence of a leakage current has been seen primarily in devices with a low number of quantum-wells. A novel measurement technique has been demonstrated, which should prove useful for obtaining a numerical value for the leakage current in semiconductor lasers. The results presented suggest that leakage current is not significant for a 9 well device until operating at temperatures above around 373 K. This is supported by evidence supplied by the spontaneous emission spectra.

[pt] Propriedades dinâmicas dos lasers semicondutores monomodo têm sido investigadas utilizando-se diferentes sistemas ópticos de medição. Sistemas ópticos integrados auto- homódino e heteródino foram montados para a medição da modulação em intensidade (IM) e freqüência (FM) e para a obtenção do fator de alargamento da largura de linha (alfa) de três lasers semicondutores de realimentação distribuída (DFB) de seção única. O sistema auto-homódino foi pela primeira vez empregado na obtenção do fator de alargamento da largura de linha. Este sistema mostrou-se mais estável, prático e as medidas apresentam melhor reprodutibilidade que no sistema heteródino, uma vez que é possível obter as características de IM, FM e o parâmetro alfa em uma única medida sem o uso de um outro laser semicondutor como oscilador local. O outro sistema utilizador foi o interferômetro de Mach- Zehnder com detenção balanceada montado com elementos discretos. É possível medir as características de modulação e ruídos dos dispositivos com este interferômetro empregado como discriminador de freqüência. Com este instrumento foi feita a caracterização dinâmica de lasers DFB de seção única, DBR de múltiplas seções e grating assisted codirectional coupler with rear sampled reflector (GCSR) lasers. Foi analisado e pela primeira vez quantificado o efeito de desintonização carrregada em lasers GCSR, pelas medidads de resposta da IM, ruído de freqüência e largura de linha. A realização da caracterização das propriedades dinâmicas de lasers GCSR de larga sintonia é de grande importância, uma vez que muito pouca informação está disponível sobre o assunto pois a estrutura do dispositivo foi desenvolvida recentemente. O lasers GCSR possui quatro seções, uma seção de ganho e três sintonia. Estes dispositivos possuem sintonia quase-contínua de 1520 a 1560nm. Características como ruído de intensidade relativo (RIN), ruído de freqüência, largura de linha, resposta a modulação de amplitude e de freqÜência foram investigadas sob diferentes condições de funcionamento. O comportamento da largura de linha, freeqüência de ressonância, largura de faixa de modulação e varredura em freqüência foi analisado em dez comprimentos de onda espaçados de 4nm dentro da faixa de sintonia. A resposta IM tem características quase constantes sobre a faixa de sintonia e a resposta FM é comparável ou melhor que em lasers com refletor de Bragg distribuído (DBR). O fator de alargamento da largura de linha (alfa) foi obtido de forma inédita pelo uso do interferômetro de Mach-Zehnder com detecção balanceada pela medida das respostas AM e FM, alfa tem seu valor máximo no lado dos comprimentos de onda mais longos e decresce na direção dos comprimentos de onda mais curtos. Foi observado uma melhora em algumas prorpiedades do laser como: redução do ruído de freqüência, largura de linha e aumento da largura de faixa de modulação com a sintonia da seção de fase. Isto é característico da ocorrência do efeito de desintonização carregada (detuned loading effect), o qual geralmente ocorre em lasers DBR. Este efito explica o comportamento observado da largura de linha, largura de faixa de modulação e parâmetro alfa na faixa de sintonia. / [en] Dynamic properties of single mode semiconductor lasers have been investigated using different optical set-ups. Intergrated optical self-homodyne and heterodyne systems were mounted to measure the intensity (IM) and frequency (FM) modulation responses and to obtain the linewidth enhancement factor (a) of three single-section distributed feedback lasers (DFB). The self-homodyne interferometric system was used for the first time to obtain the linewidth enhancement factor. This system is more stable, reproducible and practical than the heterodyne set-up, since it is possible to obtain IM, FM characteristics and a parameter in one measurement without using another semiconductor lase as a local oscillator. The other system used was the Mach-Zehnder interferometer with balanced detection mounted with discrete optical elements. This instrument works as a frequency discriminator, therefore, it is possible to anlyse the modulation and noise properties of semiconductor lasers with one or more sections. Single section DFB lasers, multi-section DBR and grating assisted condirectional coupler with rear sampled reflector (GCSR) lasers were characterised using the interferometer. Measuring the IM response, frequency noise and linewidth of GCSR lasers it was possible to study the detuned loading effect in these devices. This effects was quantified for the first time in this work. The dynamic characterisation of widely tunable GCSR lasers is really relevant, once very little information is available about these devices and their structure was developed recently. The GCSR laser has four sections, one gain section and three tuning sections. These devices have quasi-continous tuning range from 1520 to 1560 nm. The relative intensity noise (RIN), frequency noise and linewidth characteristics, amplitude modulation (AM) and FM responses were measured at ten different wavelength spaced by 4 nm on the tuning range. The AM response hag quasi-constant characteristics on the tuning range and the FM response is comparable or better than on ordinary distributed Bragg reflector lasers (DBR). A new technique for a parameter extraction was developed measuring AM and FM responses using a Mach-Zehnder interferometer with balanced detection. The calculated a aparameter has a maximum value in the long wavelength side and decreases in the direction of the short wavelength side. An improvement of some laser properties like frequency noise, linewidth and modulation bandwidth with the phase tuning was observed. These are characteristics of the detuned loading effect, which usually occurs in DBR lasers. This effect explains the linewidth, bandwidth and a parameter behaviour on the tuning range.

abstract: Semiconductor nanolasers, as a frontier subject has drawn a great deal of attention over the past decade. Semiconductor nanolasers are compatible with on-chip integrations towards the ultimate realization of photonic integrated circuits. However, innovative approaches are strongly required to overcome the limitation of lattice-mismatch issues. In this dissertation, two alternative approaches are employed to overcome the lattice-mismatch issues. i) By taking advantage of nanowires or nanobelts techniques, flexibility in bandgap engineering has been greatly expanded, resulting in the nanolasers with wide wavelength coverage and tunability. Simultaneous two-color lasing in green and red is firstly achieved from monolithic cadmium sulfide selenide nanosheets. The wavelength separation is up to 97 nm at room temperature, larger than the gain bandwidth of a single semiconductor material in the visible wavelength range. The strategies adopted for two-color lasers eventually leads to the realization of simultaneous red, green and blue lasing and white lasing from a single zinc cadmium sulfide selenide nanosheet with color tunability in the full visible range, making a major milestone in the ultimate solution of laser illumination and laser display. In addition, with the help of nanowire techniques, material emission has been extended to mid-infrared range, enabling lasing at ~3µm from single lead sulfide subwavelength wires at 180 K. The cavity volume of the subwavelength laser is down to 0.44 λ3 and the wavelength tuning range is over 270 nm through the thermo-optic mechanism, exhibiting considerable potentials for on-chip applications in mid-infrared wavelength ranges. ii) By taking advantage of membrane transfer techniques, heterogeneous integration of compound semiconductor and waveguide material becomes possible, enabling the successful fabrication of membrane based nano-ring lasers on a dielectric substrate. Thin membranes with total thickness of ~200nm are first released from the original growth substrate and then transferred onto a receiving substrate through a generally applicable membrane transfer method. Nano-ring arrays are then defined by photolithography with an individual radius of 750 nm and a radial thickness of 400-500 nm. As a result, single mode lasing is achieved on individual nano-ring lasers at ~980 nm with cavity volumes down to 0.24 λ3, providing a general avenue for future heterogeneous integration of nanolasers on silicon substrates. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2016

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