No description available.

No description available.

No description available.

Silicon nanocrystals embedded in silicon nitride have received attention as promising materials for optoelectronic applications. More specifically, band gap engineering of novel materials based on silicon nanocrystals has been proposed for possible application in an all-silicon tandem solar cell within the field of `third generation' photovoltaics. Such an application would require nanocrystals to exhibit quantum confinement whereby the optical and electrical properties of a film could be tuned by controlling the size of these `quantum dots'. This thesis investigates the correlation between the structural and optical properties of silicon nanocrystals grown in silicon nitride multilayer structures via solid phase crystallisation, as part of an experimental investigation into quantum confinement. A study of the relevant processing parameters for the solid phase crystallization of silicon nanocrystals in amorphous silicon nitride is presented and the effectiveness of the multilayer approach for controlling nanocrystal size is demonstrated. Structural characterisation using transmission electron microscopy and glancing incidence x-ray diffraction is complemented with a new application of Fourier transform infrared spectroscopy for the detection of silicon nanocrystals. A case study on the effects of annealing temperature on the photoluminescence from silicon nitride multilayers is presented. While a clear correlation between the structural, molecular and optical properties is demonstrated, evidence of quantum confinement remains ambiguous. The investigation into the limits of parameter space for the formation of silicon nanocrystals in silicon nitride multilayers also leads to the formation of a novel Si-Si3N4 nanocomposite material. A comprehensive study of the photoluminescence from silicon nanocrystals embedded in nitride is presented in the context of homogeneous and multilayer nitride films. Size dependent PL and absorption is demonstrated for silicon nitride multilayers with silicon-rich silicon nitride layer thicknesses varying from 1 to 4.5 nm, indicating the formation of quantum wells. These same structures are annealed to form arrays of silicon nanocrystals. Although the PL and absorption spectra suggest quantum effects, inherent ambiguities remain. The findings in this thesis provide greater insight into the nature of confinement and indicate the need for further research if the successful implementation of these structures into an all silicon tandem cell is to be achieved.

Thesis (M.S.E.C.E.)--University of Delaware, 2008. / Principal faculty advisor: Stephen P. Bremner, Dept. of Electrical & Computer Engineering. Includes bibliographical references.

Thesis (Ph.D.)--Georgia Institute of Technology, 2008. / Adviser: Ajeet Rohatgi. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 1998. / Vita. Includes bibliographical references (leaves 190-201). Available also in a digital version from Dissertation Abstracts.

Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Brian A. Korgel. Vita. Includes bibliographical references.

No description available.

Crystalline silicon (Si) wafers used as substrates in the semiconductor and photovoltaic (PV) industries are traditionally manufactured using a multi-wire slurry sawing (MWSS) technique. Due to its high productivity potential, the fixed abrasive diamond wire sawing (DWS) technique is of considerable interest to Si wafer producers. Although both sawing techniques are currently used in the industry, a fundamental understanding of the underlying process is still lacking, particularly for diamond wire sawing. Consequently, optimization of the wire sawing process is carried out largely based on experience and trial and error. This thesis aims to develop a systematic fundamental understanding of diamond wire sawing of Si materials used for PV applications. First of all, a comparative analysis of the characteristics of silicon wafers cut by slurry and fixed abrasive diamond wire sawing is presented. The analysis results indicate that fixed abrasive diamond wire sawing may be a viable alternative to slurry wire sawing. Modeling and experimental studies of single grit diamond scribing of Si are proposed to shed light on the basic cutting mechanisms. Although Si is brittle at room temperature, it is possible to properly control the cutting conditions to obtain a completely ductile mode of material removal. The effects of material anisotropy, abrasive grit shape, friction condition and external hydrostatic pressure on the ductile-to-brittle mode transition in cutting of single crystal Si (sc-Si) are systematically investigated. Multicrystalline Si (mc-Si) based solar cells take up the majority of the global PV market. Hard inclusions (Silicon carbide and Silicon nitride) in multicrystalline Si (mc-Si) ingots may cause wire breakage and negatively impact the process, surface/subsurface morphology and mechanical properties of the resulting wafer. Their effects are experimentally studied through the single grit diamond scribing on the mc-Si sample with high density of inclusions. Finally, it is identified that there is a correlation between the high dislocation density and the increase of fracture toughness in mc-Si. The increase in fracture toughness leads to greater capability of ductile mode of cutting and higher specific scribing energy in the brittle fracture regime. Results of these fundamental investigations are expected to generate useful knowledge for optimizing the diamond wire sawing process in order to achieve high productivity and minimum surface/subsurface damage.