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81	The Damage Layer Produced in Ion Bombarded Silicon Reid, Ian 08 1900 (has links) In this thesis a study is made of the damage layer (as defined by its solubility in a HF-H2o2, or concentrated HF solution) produced by ion bombardment of Si. This thesis is concerned with not only the layer but also its usefulness in the study of radiation damage itself. The layer is examined with respect to the adverse effects it has upon the anodic oxidation and stripping technique, to the dose of incident ions required to produce it (ie the threshold dose), and to its relationship to the amorphous layer which has been observed with ion bombardment of Si. Annealing of the damage has been approached from two points of view. First the temperature dependence of the threshold dose is used to obtain information about the annealing of the damage that occurs between the formation of a discrete damage zone and the formation of a layer. Secondly using gas release of the radioactive Kr85 the annealing of the fully formed amorphous damage layer is followed. The solubility of the damage layer in a HF-H2o2 solution is shown to be a very useful tool in the study of radiation damage. Firstly it provides a convenient means of obtaining the mean range of the damage distribution as a function of incident ion energy. Secondly it is used to obtain the threshold dose for the formation of the damage layer, and thirdly it is used in the gas release experiments to give more detailed information about the Kr85 motion. / Thesis / Master of Science (MS) damage layer ion bombarded silicon silicon
82	THE EFFECT OF SILICON ON CARBON DEPOSITION ON IRON-SILICON ALLOYS Thomason, Cynthia Dean January 1984 (has links) No description available. Carbon. Iron-silicon alloys.
83	Nitrogen, implantation in N-type and P-type silicon Borhani, Mostafa January 2011 (has links) Digitized by Kansas Correctional Industries Ion implantation Semiconductors Silicon
84	Positron re-emission from silicon carbide surfaces Hui, I Pui., 許貽培. January 2002 (has links) published_or_final_version / Physics / Master / Master of Philosophy Positrons. Silicon carbide - Surfaces.
85	Study of epitaxial thin films of YBa2Cu3O7-[delta] on silicon with different buffer layers Fu, Engang., 付恩剛. January 2005 (has links) published_or_final_version / abstract / Physics / Master / Master of Philosophy Thin films. Silicon. Epitaxy.
86	Far-infrared laser spectroscopy of disordered solids Hutt, K. W. January 1986 (has links) No description available. 539.7 Silicon dioxide structure
87	A structural study of the Si(001) using high resolution helium atom diffraction Rohlfing, David Michael January 1987 (has links) No description available. 530.41 Silicon surface analysis
88	Amorphous silicon for electronic device application Smith, G. J. January 1983 (has links) No description available. 530.41 Crystalline silicon
89	Electronic transport and dimensionality transitions in Si MOS structures Pooke, Donald Mark January 1988 (has links) No description available. 530.41 Silicon MOSFETS
90	The phenyldimethylsilyl group as a masked hyroxyl group in organic synthesis Plaut, H. E. January 1983 (has links) No description available. 547 Organo-silicon chemistry

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