A process, called carbon nanotube templated microfabrication (CNT-M) makes high aspect ratio microstructures out of a wide variety of materials by growing patterned vertically aligned carbon nanotubes (VACNTs) as a framework and then infiltrating various materials into the frameworks by chemical vapor deposition (CVD). By using the CNT-M procedure, a partial Si infiltration of carbon nanotube frameworks results in porous three dimensional microscale shapes consisting of silicon-carbon nanotube composites. The addition of thin silicon shells to the vertically aligned CNTs (VACNTs) enables the fabrication of robust silicon nanostructures with edibility to design a wide range of geometries. Nanoscale dimensions are determined by the diameter and spacing of the resulting silicon/carbon nanotubes while microscale dimensions are controlled by the lithographic patterning of CNT growth catalyst. The characterization and application of the new silicon nanomaterial, silicon-carbon core-shell nanotube (Si/CNT) composite, is investigated thoroughly in the dissertation.The Si/CNT composite is used as thin layer chromatography (TLC) separations media with precise microscale channels for fluid flow control and nanoscale porosity for high analyte capacity. Chemical separations done on the CNT-M structured media outperform commercial high performance TLC media resulting from separation efficiency and retention factor. The Si/CNT composite is also used as an anode material for lithium ion batteries. The composite is assembled into cells and tested by cycling against a lithium counter electrode. This CNT-M structured composite provides an effective test bed for studying the effects of geometry (e.g. electrode thickness, porosity, and surface area) on capacity and cycling performance. A combination of high gravimetric, volumetric, and areal capacity makes the composite an enabling materials system for high performance Li-ion batteries.Last, a thermal annealing to the Si/CNT composite results in the formation of silicon carbide nanowires (SiCNWs). This combination of annealing and Si/CNTs yields a unique fabrication approach resulting in porous three dimensional silicon carbide structures with precise control over shape and porosity.

Electronic band structure of various crystal orientations of relaxed and strained bulk, 1D and 2D confined semiconductors are investigated using nonlocal empirical pseudopotential method with spin-orbit interaction. For the bulk semiconductors, local and nonlocal pseudopotential parameters are obtained by fitting transport-relevant quantities, such as band gap, effective masses and deformation potentials, to available experimental data. A cubic-spline interpolation is used to extend local form factors to arbitrary q and the resulting transferable local pseudopotential V(q) with correct work function is used to investigate the 1D and 2D confined systems with supercell method. Quantum confinement, uniaxial and biaxial strain and crystal orientation effects of the band structure are investigated. Regarding the transport relavant quantities, we have found that the largest ballistic electron conductance occurs for compressively-strained large-diameter [001] wires while the smallest transport electron effective mass is found for larger-diameter [110] wires under tensile stress.

No description available.

Silicon nanowire based multiple gate metal oxide field effect transistors(MG-MOSFET) appear as replacements for conventional bulk transistors in post 45nm technology nodes. In such transistors the short channel effect(SCE) is controlled by the device geometry, and hence an undoped (or, lightly doped) ultra-thin body silicon nanowire is used to sustain the channel. The use of undoped body also solves several issues in bulk MOSFETs e.g., random dopant fluctuations, mobility degradation and compatibility with midgap metal gates. The electrostatic integrity of such devices increases with the scaling down of the body thickness. Since the quantization of electron energy cannot be ignored in such ultra-thin body devices, it is extremely important to consider quantum effects in their threshold voltage models. Most of the models reported so far are valid for long channel double gate devices. Only Munteanu et al. [Journal of non-crystalline solids vol 351 pp 1911-1918 2005] have reported threshold voltage model for short channel symmetric double gate MOSFET, however it involves unphysical fitting parameters. Only Munteanu et al.[Molecular simulation vol 31 pp 839-845 2005] reported threshold voltage model for quad gate transistor which is implicit in nature. On the other hand no modeling work has been reported for other types of MG-MOSFETs (e.g., tri gate, cylindrical body)apart from numerical simulation results. In this work we report physically based closed form quantum threshold voltage models for short channel symmetric double gate, quad gate and cylindrical body gate-all-around MOSFETs. In these devices quantum effects aries mainly due to the structural confinement of electron energy. Proposed models are based on the analytical solution of two or three-dimensional Poisson equation and one or two-dimensional Schrodinger equation depending on the device geometries. Judicial approximations have been taken to simplify the models in order to make them closed form and efficient for large scale circuit simulation. Effort has also been put to model the quantum threshold voltage of tri gate MOSFET. However it is found that the energy quantization in tri gate devices are mainly due to electronic confinement and hence it is very difficult to develop closed form analytical equations for the threshold voltage. Thus in this work the modeling of tri gate devices have been limited to long channel cases. All the models are validated against the professional numerical simulator.

La miniaturisation des composants électroniques de l'échelle micro à l'échelle nano a entrainé aussi une miniaturisation des systèmes micro électromécaniques (MEMS). Cependant, la transition de MEMS à NEMS (systèmes nano électromécaniques) ne se résume pas simplement une réduction de taille. En fait, les méthodes d'actionnement et de détection utilisées couramment à l'échelle micro ne sont pas toujours efficaces à l'échelle nano. En plus, la fabrication des composants nanométriques avec des méthodes top-down est un défi à cause des limites de résolution. En surmontant ces difficultés, nous avons fabriqué et caractérisé des résonateurs à base de nanofils en silicium suspendus avec des petites sections de 30nm par 40nm et de longueurs allant de 1.5-3.5μm. L'actionnement de ces résonateurs est électrostatique et la détection est effectué avec deux mécanismes indépendants : (i) l'effet piezo résistif de deuxième ordre et (ii) l'effet de champ. Les mesures en régime statique nous ont permis de valider la présence de ces deux mécanismes et d'extraire les paramètres correspondants tels que le facteur de jauge et la transconductance du nanofil. Aussi, pour la première fois, ces deux principes ont été utilisés en alternance pour détecter la résonance du même nanofil. Les résultats obtenus avec ces transductions sont très prometteurs. La distinction entre les deux méthodes de transduction a été possible grâce à l'hétérodynage qui permet de sélectionner des phénomènes qui se produisent à la fréquence naturelle du dispositif ou au double de cette fréquence. Dans le but d'évaluer les performances de ces résonateurs pour de potentielles applications, nous avons mesuré la variance d'Allan. La stabilité de ces résonateurs pour des temps courts est du même ordre que celle des MEMS en silicium ce qui permet d'envisager l'utilisation de nanofils de silicium pour concevoir des bases de temps. Ces dispositifs nanométriques peuvent également être utilisés comme détecteur de masse avec des résolutions en masse de l'ordre du zg / The continuous miniaturization of electronics from micro to nano scale has impacted also the micro electromechanical systems (MEMS). However, the transition from MEMS to NEMS (nano electromechanical systems) is not only a matter of size. The actuation and detection principles used for efficient transduction at the microscale are not always efficient at the nanoscale. Also, top-down fabrication for nanometric devices becomes challenging due to resolution limits. Overcoming such difficulties, we were able to fabricate and characterize suspended silicon nanowire resonators with cross sections as small as 30nm by 40nm and lengths of 1.5-3.5μm. The actuation of these resonators was electrostatic, while the detection was performed with two independent physical phenomena: (i) the piezoresistive effect of second order and (ii) the field-effect. Measurements in static regime permitted us to validate the presence of these two mechanisms and extract related parameters such as the gauge factor and the nanowire transconductance. Then, for the first time, these two principles were used alternatively on the same silicon nanowire device for resonance detection and showed promising results. The distinction between the two was possible thanks to the down-mixed technique which could differentiate phenomena happening at the natural resonant frequency of the nanowire and twice this frequency. In order to evaluate the performances of these resonators, Allan deviation measurements were performed. It seems that the short-term stability of these devices is in the spectrum of other silicon MEMS devices for time reference applications and that potentially silicon nanowire resonators could be conceived for time keeping. Another potential application of these devices consists in mass sensing with mass resolutions close to the state of the art (<zg)

Silicon nanowires (SiNWs) and the copper chalcogenides, namely copper sulfide (Cu2S) and selenide Cu2Se, have diverse applications in renewable energy technology. For example, SiNWs which have direct band gaps unlike bulk Si, have the potential to radically reduce the cost of Si based photovoltaic cells. However, they degrade quickly under ambient conditions. Various surface passivations have therefore been investigated for enhancing their stability but it is not yet well understood how they affect the electronic structure of SiNWs at a fundamental level. Here, we will explore, from first-principles simulation, how fluorine, methyl and hydrogen surface passivations alter the electronic structures of [111] and [110] SiNWs via strain and quantum confinement. We also show how electronic charge states in [111] and [110] SiNWs can be effectively modelled by simple quantum wells. In addition, we address the issue of why [111] SiNWs are less influenced by their surface passivation than [110] SiNWs. Like SiNWs, Cu2S and Cu2Se also make excellent photovoltaic cells. However, they are most well known for their exceptional thermoelectric performance. This is by virtue of their even more unique solid-liquid hybrid nature which combines the low thermal conductivity and good electrical characteristics required for a high thermoelectric efficiency. We use first-principles molecular dynamics simulations to show that Cu diffusion rates in Cu2S and Cu2Se can be as high as 10-5cm2s-1. We also relate their phonon power spectra to their low thermal conductivities. Furthermore, we evaluate the thermoelectric properties of Cu2S and Cu2Se using a combination of Boltzmann transport theory and first-principles electronic structure calculations. Our results show that both Cu2S and Cu2Se are capable of maintaining high Seebeck coefficients in excess of 200μVK-1 for hole concentrations as high as 3x1020cm-3.

The idea of utilizing nanomaterials in bio-related applications has been extensively practiced during the recent decades. Magnetic nanoparticles (MPs), especially superparamagnetic iron oxide nanoparticles have been demonstrated as promising candidates for biomedicine. A protective coating process with biocompatible materials is commonly performed on MPs to further enhance their colloidal and chemical stability in the physiological environment. Mesoporous hollow silica is another class of important nanomaterials that are extensively studied in drug delivery area for their ability to carry significant amount of guest molecules and release in a controlled manner. In this study, different synthetic approaches that are able to produce hybrid nanomaterials, constituting both mesoporous hollow silica and magnetite nanoparticles, are described. In a two-step approach, pre-synthesized magnetite nanoparticles are either covalently conjugated to the surface of polystyrene beads and coated with silica or embedded/enclosed in the porous shell during a nanosized CaCO3 templated condensation of silica precursors, followed by acid dissolution to generate the hollow structure. It was demonstrated that the hollow interior is able to load large amount of hydrophobic drugs such as ibuprofen while the mesoporous shell is capable of prolonged drug. In order to simplify the fabrication procedure, a novel in-situ method is developed to coat silica surface with magnetite nanoparticles. By refluxing the iron precursor with mesoporous hollow silica nanospheres in polyamine/polyalcohol mixed media, one is able to directly form a high density layer of magnetite nanoparticles on silica surface during the synthesis, leaving reactive amine groups for further surface functionalization such as fluorescence conjugation. This approach provides a convenient synthesis for silica nanostructures with promising potential for drug delivery and multimodal imaging. In addition to nanoparticles, nanowires also benefit the research and development of instruments in clinical diagnosis. Semiconductive nanowires have demonstrated their advantage in the fabrication of lab-on-a-chip devices to detect many charge carrying molecules such as antibody and DNA. In our study, In2O3 and silicon nanowire based field effect transistors were fabricated through bottom-up and top-down approaches, respectively, for ultrasensitive bio- detection of toxins such as ricin. The specific binding and non-specific interaction of nanowires with antibodies were also investigated.

Les microphones à électret dédiés à l'électronique grand public et les applications médicales (les audioprothèses) ont atteint les limites de la miniaturisation. Depuis la sortie du premier microphone basé sur une technologie microsystème sur silicium (MEMS: Micro-Electro-Mechanical Systems), les microphones à électret sont progressivement remplacés par les microphones MEMS. Les MEMS utilisent le silicium car il offre des caractéristiques mécaniques exceptionnelles avec de bonnes propriétés électriques et la technologie de fabrication est maintenant bien maîtrisée. La plupart des microphones MEMS qui sont décrits dans la littérature sont constitués d’une membrane qui vibre en dehors du plan du capteur, et utilisent la transduction capacitive. La miniaturisation de tels microphones est limitée car leur sensibilité est liée à la valeur de la capacité qui dépend de la taille de la membrane. En outre, les capteurs capacitifs sont très sensibles aux capacités parasites et aux non-linéarités. Cette thèse présente une nouvelle architecture de microphone MEMS qui utilise des micro-poutres qui vibrent dans le plan capteur. La transduction du signal est réalisée par des nanojauges piézorésistives intégrées dans le microsystème et attachées aux micro-poutres. Ce système de détection original ne présente pas les inconvénients de la détection capacitive et à la différence des piézorésistors classiques intégrés dans la membrane de silicium, les nanofils suspendus permettent d’éliminer les courants de fuite. De plus, l'amélioration de la détection est possible puisque le coefficient piézo-résistif longitudinal est inversement proportionnel à la section du nanofil. Les fluctuations de pression acoustique entraînent les déviations des micro-poutres qui produisent une concentration de contraintes dans les nanogauges. Le comportement du capteur, que l’on cherche à modéliser, est lié à des phénomènes mécaniques, acoustiques et électriques qui sont couplés. En raison des dimensions micrométriques du MEMS, les effets des dissipations thermique et visqueuse doivent être pris en compte dans le comportement acoustique. Pour prédire de façon fiable le comportement du capteur, deux modèles vibroacoustiques sont utilisés: un modèle éléments finis basé sur l'ensemble des équations de Navier-Stokes linéarisées et un modèle approché basé sur un schéma à constantes localisées (représentation par circuit électrique équivalent). Les deux modèles sont complémentaires dans le processus de conception pour déterminer la réponse en fréquence et le taux de bruit du capteur. Le travail est complété par la description des processus technologiques et les défis liés à la fabrication du prototype. Puis deux approches pour la caractérisation fonctionnelle du microphone MEMS sont présentées, la première en tube d’impédance, la seconde en champ libre. / Electret microphones dedicated to consumer electronics and medical applications (hearing aids) have reached the miniaturization limits. Since the release of the first microphone based on Silicon micromachining, electret microphones are constantly replaced by MEMS microphones. MEMS (Micro-Electro-Mechanical Systems) microphones use Silicon that provides exceptional mechanical characteristics along with good electric properties and mature fabrication technology. Regardless of the transduction principle (capacitive, piezoresistive, piezoelectric, optical), all of the MEMS microphones reported in the state of the art literature are based on a membrane deflecting out of the plane of the base wafer. Most of the reported microphones and all of the commercially available MEMS use capacitive transduction. Downscaling of capacitive microphones is problematic, since the sensitivity depends on capacitance value. Moreover capacitive sensors suffer of high sensitivity to parasitic capacitance and nonlinearity. The drawbacks of capacitive detection may be overcome with use of piezoresistive properties of Silicon nanowires. Unlike the classical piezoresistors integrated into silicon membrane, suspended nanowires do not suffer of leakage current. Further improvement of piezoresistive detection is possible since the longitudinal piezoresistive coefficient rises inversely proportional to nanowire section. This thesis presents the considerations of novel MEMS microphone architecture that uses microbeams which deflect in the plane of the base wafer. Signal transduction is achieved by piezoresistive nanogauges integrated in the microsystem and attached to the microbeams. Acoustic pressure fluctuations lead to the deflection of the microbeams which produces a stress concentration in the nanogauges. Accurate simulations of the discussed transducer couple acoustic, mechanical and electric behavior of the system. Due to micrometric dimensions of the MEMS acoustic system, thermal and viscous dissipative effects have to be taken into account. To reliably predict the sensor behavior two acoustic models are prepared: the complete Finite Element Model based on the full set of linearized Navier-Stokes equations and the approximative model based on the Lumped Elements (Equivalent Cirtuit Representation). Both models are complementary in the design process to finally retrieve the frequency response and the noise budget of the sensor. The work is completed by the description of the technological process and the challenges related to the prototype microfabrication. Then the approach to the MEMS microphone characterization in pressure-field and free-field is presented.

Les propriétés électro-thermo-mécaniques remarquables qui peuvent apparaître dans les nanofils de silicium font l'objet d'un nombre croissant de travaux de recherche. Ces travaux de thèse de nature fortement expérimentale, visent à donner une meilleure connaissance de ces propriétés dans le cas de nanofils, en silicium monocristallin, fabriqués par approche descendante. Pour caractériser la piézorésistivité, deux méthodes de chargement mécaniques ont été développées : la flexion 4 points de puce et la traction/compression in situ avec un actionneur MEMS. La méthode 3ω a été choisie pour des mesures de conductivité thermiques. Ces propriétés ont été étudiées en fonction de la température et la contrainte dans une station sous pointes cryogénique.Les résultats montrent que les nanofils fabriqués à partir de substrats SOI amincis peuvent, de manière inattendue, être fortement contraints en compression après fabrication. Les nanofils de type p présentent, même en régime de mesure dynamique, des coefficients piézorésistifs élevés qui décroissent fortement avec la température et permettent une détection intégrée de mouvement de MEMS avec une limite de détection inférieure à l'Angström. Les mesures thermiques confirment l’effet d’échelle attendu de la conductivité thermique, la décroissance avec la température est compatible avec les résultats théoriques et expérimentaux précédemment publiés. / Remarkable nanoscale electro-thermo-mechanical properties of silicon nanowires are increasingly studies. This experimental thesis investigates such properties for top-down fabricated monocrystal silicon nanowires.A four points bending set-up and a MEMS actuator are developed to apply ex situ and in situ mechanical stress on nanowires. Those devices are characterised in a cryogenic environment within a microprobe station. Electrical properties and piezoresistivity are studied using those systems. Moreover, the 3ω method measures the thermal conductivity of these nanowires.From buckling of silicon nanowires, unexpected high compressive stress (>100 MPa) was identified in top silicon layers of SOI substrates. Drift-compensated measurements show that p type silicon nanowires present large piezoresistive coefficients which decrease with temperature. Additionally, the MEMS device demonstrates the possibility to detect ample MEMS movements with sub-ångström resolution using the nanowires as piezoresistive nanogauges. The thermal conductivity was found consistent with previously reported values for silicon nanowires, and expectedly decreases with temperature.

Size reduction is a key issue in the development of contemporary integrated photonics. This thesis is mainly devoted to study some integrated photonic components in sub-wavelength or nanometric scales, both theoretically and experimentally. The possible approaches to reduce the sizes or to increase the functionalities of photonic components are discussed, including waveguides and devices based on silicon nanowires, photonic crystals, surface plasmons, and some near-field plasmonic components. First, some numerical methods, including the finite-difference time-domain method and the full-vectorial finite-difference mode solver, are introduced. The finite-difference time-domain method can be used to investigate the interaction of light fields with virtually arbitrary structures. The full-vectorial finite-difference mode solver is mainly used for calculating the eigenmodes of a waveguide structure. The fabrication and characterization technologies for nano-photonic components are reviewed. The fabrications are mainly based on semiconductor cleanroom facilities, which include thin film deposition, electron beam lithography, and etching. The characterization setups with the end-fire coupling and the vertical grating coupling are also described. Silicon nanowire waveguides and related devices are studied. Arrayed waveguide gratings with 11nm and 1.6nm channel spacing are fabricated and characterized. The dimension of these arrayed waveguide gratings is around 100 μm, which is 1--2 order of magnitude smaller than conventional silica based arrayed waveguide gratings. A compact polarization beam splitter employing positive/negative refraction based on a photonic crystal of silicon pillars is designed and demonstrated. Extinction ratio of ~15dB is achieved experimentally in a wide wavelength range. Surface plasmon waveguides and devices are analyzed theoretically. With surface plasmons the light field can be confined in a sub-wavelength dimension. Some related photonic devices, e.g., directional couplers and ring resonators, are studied. We also show that some ideas and principles of microwave devices, e.g., a branch-line coupler, can be borrowed for building corresponding surface plasmon based devices. Near-field plasmonic components, including near-field scanning optical microscope probes and left handed material slab lenses, are also analyzed. Some novel designs are introduced to enhance the corresponding systems. / QC 20100908