Global ETD Search

171	Swift electro-optic modulator / Harston, Geof, January 2003 (has links) (PDF) Thesis (M.S.)--Brigham Young University. Dept. of Electrical and Computer Engineering, 2003. / Includes bibliographical references (p. 89-91).
172	Temperature control and characterization of silicon-germanium growth by rapid thermal chemical vapor deposition / Hwang, Sung-bo, January 2002 (has links) Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references (leaves 163-173). Available also in a digital version from Dissertation Abstracts. Germanium. Silicon. Vapor-plating.
173	Design and characterization of silicon micromechanical resonators Ho, Gavin Kar-Fai. January 2008 (has links) Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Member: David R. Hertling; Committee Member: Farrokh Ayazi; Committee Member: Gary S. May; Committee Member: Oliver Brand; Committee Member: Paul A. Kohl. Part of the SMARTech Electronic Thesis and Dissertation Collection.
174	Catalytic oxidation of methane using single crystal silicon carbide Gopalkrishna, Akshoy. January 2003 (has links) Thesis (M.S. Ch. E.)--University of South Florida, 2003. / Title from PDF of title page. Document formatted into pages; contains 70 pages. Includes bibliographical references. Silicon carbide. Methane
175	Infrared studies of the rotational motion of interstitial H₂ and the vibrational lifetimes of H- decorated lattice defects in Si / Chen, E. Elinor, January 2002 (has links) Thesis (Ph. D.)--Lehigh University, 2003. / Includes bibliographical references and vita. Hydrogen. Silicon. Semiconductors
176	Temperature control and characterization of silicon-germanium growth by rapid thermal chemical vapor deposition Hwang, Sung-Bo, January 2002 (has links) Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company. Germanium. Silicon. Vapor-plating.
177	EFFECTS OF CERTAIN PROCESSING VARIABLES ON STACKING FAULT FORMATION IN SILICON CRYSTALS Chang, Yang-Ming, 1937- January 1977 (has links) No description available. Silicon crystals. Crystals -- Defects.
178	FABRICATION AND TESTING OF A SENSITIVE ULTRAVIOLET-VISIBLE SILICON PHOTODIODE DEVICE Martínez Montes, José de la Luz January 1979 (has links) No description available. Silicon diodes. Diodes, Semiconductor.
179	Injection-Avalanche-Based nþpn Silicon Complementary Metal Oxide–Semiconductor Light-Emitting Device (450 – 750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity Snyman, LW, Du Plessis, M, Aharoni, H 18 April 2007 (has links) In this paper, we report on an increase in emission intensity of up to 10 nW/mm2 that has been realized with a new novel two junction, diagonal avalanche control, and minority carrier injection silicon complementary metal–oxide–semiconductor (CMOS) light emitting device (LED). The device utilizes a four-terminal configuration with two embedded shallow nþp junctions in a p substrate. One junction is kept in deep-avalanche and light-emitting mode, while the other junction is forward biased and minority carrier electrons are injected into the avalanching junction. The device has been realized using standard 0.35 mm CMOS design rules and fabrication technology and operates at 9V in the current range 0.1– 3 mA. The optical output power is about one order of magnitude higher for previous single-junction nþp light-emitting devices while the emission intensity is about two orders of magnitude higher than for single-junction devices. The optical output is about three orders of magnitude higher than the low-frequency detectivity limit of silicon p–i–n detectors of comparable dimensions. The realized characteristics may enable diverse optoelectronic applications in standard-CMOS-silicon-technology-based integrated circuitry. Silicon Light-emitting devices
180	Temperature control and characterization of silicon-germanium growth by rapid thermal chemical vapor deposition Hwang, Sung-Bo, 1965- 25 April 2011 (has links) Not available / text Germanium Silicon Vapor-plating

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