¡@¡@A high efficient packaging technique was proposed for power InGaN light emitting diodes( LEDs ).In this approach , sub-mounts based on Si bench technology were used to provide a fact heat conducting channel between the LEDs and the cases.Two different structures of the Si sub-mounts were used, namely, a conventional Si block and a Si block with a copper-filled V-groove. ¡@¡@The thermal resistance of the two different sub-mounts were measured and compared. For a 45mil power LED biased at 1W, thermal resistance of 12.77¢J/W and 18.79¢J/W were measured for the Si sub-mount and the Si sub-mount with copper-filled V-groove. We believe the better thermal resistance of the sub-mount with copper-filled V-groove is due to high thermal conductivity of the copper.