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Low-loss tellurium oxide devices integrated on silicon and silicon nitride photonic circuit platformsFrankis, Henry C. January 2021 (has links)
Silicon (Si) and silicon nitride (Si3N4) have become the dominant photonic integrated circuit (PIC) material platforms, due to their low-cost, wafer-scale production of high-performance circuits. However, novel materials can offer additional functionalities that cannot be easily accessed in Si and Si3N4, such as light emission. Tellurium oxide (TeO2) is a novel material of interest because of its large linear and non-linear refractive indices, low material losses and large rare-earth dopant solubility, with applications including compact low-loss waveguides and on-chip light sources and amplifiers. This thesis investigates the post-processing integration of TeO2 devices onto standardized Si and Si3N4 chips to incorporate TeO2 material advantages into high-performance PICs. Chapter 1 introduces the state-of-the-art functionality for various integrated photonic materials as well as methods for integrating multiple materials onto single chips. Chapter 2 presents the development of a high-quality TeO2 thin film fabrication process by reactive RF sputtering, with material refractive indices of 2.07 and optical propagation losses of <0.1 dB/cm at 1550 nm. Chapter 3 investigates a conformally coated TeO2-Si3N4 waveguide platform capable of large TeO2 optical confinement and tight bending radii, characterizing fiber-chip edge couplers down to ~5 dB/facet, waveguide propagation losses of <0.5 dB/cm, directional couplers with 100% cross-over ratio, and microresonators with internal Q factors of 7.3 × 105. In Chapter 4 a spectroscopic study of TeO2:Er3+-coated Si3N4 waveguide amplifiers was undertaken, with internal net gains of up to 1.4 dB/cm in a 2.2-cm-long waveguide and 5 dB total in a 6.7-cm-long sample demonstrated, predicted to reach >10 dB could 150 mW of pump power be launched based on a developed rate-equation model. Chapter 5 demonstrates TeO2-coated microtrench resonators coupled to silicon waveguides, with internal Q factors of up to 2.1×105 and investigates environmental sensing metrics of devices. Chapter 6 summarizes the thesis and provides avenues for future work. / Thesis / Doctor of Philosophy (PhD)
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Fabrication, Design and Characterization of Silicon-on-Insulator Waveguide Amplifiers Coated in Erbium-Doped Tellurium OxideNaraine, Cameron January 2020 (has links)
This research introduces tellurium oxide (TeO2) glass doped with optically active erbium
ions (Er3+) as an active oxide cladding material for silicon-on-insulator (SOI) waveguides
for realization of a silicon-based erbium-doped waveguide amplifier (EDWA) for
integrated optics. Optical amplification of this nature is enabled by energy transitions,
such as stimulated absorption and emission, within the shielded 4f shell of the rare-earth
atomic structure caused by excitation from photons incident on the system. Er3+ ions
are doped into the TeO2 film during deposition onto the SOI waveguides using a reactive
magnetron co-sputtering system operated by McMaster’s Centre for Emerging Device
Technologies (CEDT). Prior to fabrication, the waveguides are designed using photonic
CAD software packages, for optimization of the modal behaviour in the device, and Matlab,
for characterization of the optical gain performance through numerical analysis of
the rate and propagation equations of the Er3+-based energy system. Post fabrication,
the waveguide loss and gain of the coated devices are experimentally measured. The
fabricated waveguide amplifier produces a peak signal enhancement of 3.84 dB at 1533
nm wavelength for a 1.7 cm-long waveguide device. High measured waveguide losses (>
10 dB/cm) produce a negative internal net gain per unit length. However, the demonstration
and implementation of an active rare-earth doped cladding material on a silicon
waveguide is successful, which is a major step in developing integrated optical amplifiers
for conventional silicon photonics platforms. / Thesis / Master of Applied Science (MASc)
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Thulium doped tellurium oxide amplifiers and lasers integrated on silicon and silicon nitride photonic platformsMiarabbas Kiani, Khadijeh January 2022 (has links)
Silicon photonics (SiP) has evolved into a mature platform for cost-effective low power
compact integrated photonic microsystems for many applications. There is a looming
capacity crunch for telecommunications infrastructure to overcome the data-hungry future,
driven by streaming and the exponential increase in data traffic from consumer-driven
products. To increase data capacity, researchers are now looking at the wavelength window
of the thulium-doped fiber amplifier (TDFA), centered near 2 µm as an attractive new
transmission window for optical communications, motivated by the demonstrations of low loss, low nonlinearity, and high bandwidth transmission. Large-scale implementation of
SiP telecommunication infrastructure will require light sources (lasers) and amplifiers to
generate signals and boost transmitted and/or received signals, respectively. Silicon (Si)
and silicon nitride (Si3N4) have become the leading photonic integrated circuit (PIC)
material platforms, due to their low-cost and wafer-scale production of high-performance
circuits. Silicon does however have a number of limitations as a photonic material,
including that it is not an ideal light-emitting/amplifying material. This proposed research
pertains to the fabrication of on-chip silicon and silicon nitride lasers and amplifiers to be
used in a newly accessible optical communications window of the TDFA band, which is a
significant step towards compact PICs for the telecommunication networks. Tellurium
oxide (TeO2) is an interesting host material due to its large linear and non-linear refractive
indices, low material losses and large rare-earth dopant solubility showing good
performance for compact low-loss waveguides and on-chip light sources and amplifiers.
Chapter 1 provides an overview of silicon photonics in the context of particularly rare
earth lasers and amplifiers, operating at extended wavelengths enabled by the Thulium
doped fiber amplifier. Chapter 2 presents a theoretical performance of waveguides and
microresonators as the efficient structure for laser and amplifiers applications designed for
optimized use in Erbium and Thulium doped fiber amplifier wavelength bands. Then
spectroscopic study thulium (Tm3+) has been studied as the rare earth element for Thulium
doped fiber amplifier wavelength bands. Chapter 3 presents an experimental study of
TeO2:Tm3+ coated Si3N4 waveguide amplifiers with internal net gains of up to 15 dB total
in a 5-cm long spiral waveguide. Chapter 4 provides a study of TeO2:Tm3+
-coated Si3N4 waveguide lasers with up to 16 mW double-sided on-chip output power. Chapter 5 presents an experimental study of low loss and high-quality factor silicon microring resonators coated with TeO2 for active, passive, and nonlinear applications. Chapter 6 represents the first demonstration of an integrated rare-earth silicon laser, with high performance, including single-mode emission, a lasing threshold of 4 mW, and bidirectional on-chip output powers of around 1 mW. Further results with a different design are presented
showing lasers with more than 2 mW of double-sided on-chip output power, threshold
pump powers of < 1 mW and lasing at wavelengths over a range of > 100 nm. Importantly,
a simple, low-cost design was used which is compatible with silicon photonics foundry
processes and enables wafer scale integration of such lasers in SiP PICs using robust
materials. Chapter 7 summarizes the thesis and provides paths for future work. / Dissertation / Doctor of Engineering (DEng)
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