The increase in waste heat after consuming energy or burning fossil fuels is an issue environmentally and economically. Thermoelectric (TE) materials are developed to use in various applications because of their ability in converting waste heat into electricity. However, the applications are limited due to a low efficiency of materials, and research on thermoelectric materials is an on-going project for future use. Type-I clathrates are one of the TE materials which are studied in depth since the proposal of Slack’s PGEC (Phonon-Glass-Electron-Crystal) concept in 1995 due to their excellent thermoelectric properties. In this study, development and optimization of quaternary type-I clathrates will be the focus because double substitution often leads to better figure-of-merit, ZT, but it hasn’t really been studied. Higher ZT value is necessary because the energy conversion efficiency of TE materials is depending on the ZT value along with a larger temperature difference. Addition of lanthanoid elements as 2nd guest atoms to the main type-I clathrate structure, realized in Ba8Ga16Ge30, will be attempted to form quaternary compounds. The formation of the quaternary clathrates will be analyzed through powder X-ray diffraction, single crystal analysis and energy dispersive X-ray analysis. Also, as the performance of TE materials is examined through the figure of merit, ZT = TS²σ/κ, various techniques will be used to determine the Seebeck coefficient, the electrical conductivity and the thermal conductivity. The quaternary clathrates, Ba8-xLnxGa16Ge30 and Ba8-xLnxGa16+xGe30-x, where Ln = La, Ce and Eu were synthesized from the pure elements in stoichiometric ratios at 1000°C with slow cooling to room temperature. The products were then annealed at 600°C to acquire homogeneous samples for analyses. The various compositions of lanthanoid were intercalated into the structure of clathrates, which resulted in the quaternary clathrates with homogeneity. The crystal structure of quaternary clathrates with the space group of Pm-3n exhibited the same structure type as the ternary clathrates. The successfully formed products were refined with Rietveld refinements to understand their structures. The Eu containing clathrates crystallized with a lattice parameter a = 10.78251(6) Å, V = 1253.60(2) ų, for x = 0.3. The Ce containing clathrates also adopted the same space group with a lattice parameter a = 10.77331(6) Å, V = 1250.40(2) ų, for x = 0.3. The La containing clathrates formed with a lattice parameter a = 10.78494(6) Å, V = 1254.45(2) ų, for x = 0.3. Between 0.2 and 1.0 lanthanoid elements per formula unit were substituted with decreasing amount of barium where the actual amount of Ln in clathrates was lower than nominal amount. All these quaternary clathrates were found to be n-type semiconductors as determined through the Seebeck coefficient and electrical conductivity measurements.

Bismuth telluride based compounds is known to be the best thermoelectric materials within the room temperature regime. In this study, the n-type Bi2Te3-based thermoelectric alloy was synthesized by powder metallurgy method. The Bi2Te2.7Se0.3 thermoelectric materials were prepared via the ball milling, cold pressing, and sintering processes. The effects of sintering time and temperature on the microstructures and thermoelectric properties were investigated and discussed. The X-ray diffraction patterns of Bi2Te2.7Se0.3 reveal that the compounds are single phase after the sintering processes. And the experimental results showed that the pores was reduced by the increased sintering temperature and time. According to the measurement results, the Seebeck coefficient was decreased at firest and then increased by the increased sintering temperature. The optimal Seebeck coefficient of -156.936(£gV/K) was obtained as the sample was sintered at 350¢XC for 3h. The results also showed that the thermal conductivity was increased by the increased sintering temperature, whereas the electrical resistivity was reduced. The lowest thermal conductivity 0.816 (W/m¡EK) was obtained as the sample was sintered at 350¢XC for 1h. On the other hand, the electrical resistivity of 1.6999¡Ñ10-5(£[-m) was obtained as the sample was sintered at 450¢XC for 2h. The figure of merit of 0.31 was obtained at room temperature as the sample was sintered at 375¢XC for 2h.

In this study, new compositions of Tsai-type 1/1 quasicrystal approximants Gd(14)Au(70)Si(16), Gd(14)Au(67)Ge(19), Tb(14)Au(70)Si(16) and Yb(16)Au(65)Ge(19)are synthesized using both self-flux and arc-melting-annealing techniques. Both syntheses routes resulted single phase samples. The crystal structures of the compounds are determined by collecting single crystal X-ray and/or powder X-ray and powder neutron diffraction intensities.  The atomic structure refinements indicated that the compounds are essentially iso-structural with the prototype Tsai-type 1/1 approximant crystal, YbCd6. However, there are subtle structural variations at their cluster centers and in the so-called cubic interstices which affects some of their physical properties. Thermoelectric and magnetic properties of the compounds are investigated. Significant differences are observed in the thermoelectric properties of Gd(14)Au(70)Si(16), Gd(14)Au(67)Ge(19) and Yb(16)Au(65)Ge(19) compounds which are explained on the bases of their crystal structures and chemical compositions. Magnetic susceptibility and specific heat measurements revealed ferromagnetic transitions at low temperatures, Tc ≈ 22.5 K for Gd(14)Au(70)Si(16) and Tc ≈ 13.1 K for Gd(14)Au(67)Ge(19), whereas, for the Tb(14)Au(70)Si(16) compound a ferrimagnetic-like transition is observed at Tc ≈ 9 K. Moreover, a re-entrant spin-glass transition is observed at TRSG ≈ 3.3 K for Gd(14)Au(67)Ge(19) compound. Finally, the magnetic structure of the Tb(14)Au(70)Si(16) compound was determined from powder neutron diffraction data which is to our knowledge the first magnetic structure refinement report in the family of quasicrystals and approximants.

Thermoelectric materials are the only known materials capable of direct conversion of a heat gradient into electricity (Seebeck effect) or vice-versa (Peltier effect). Thermoelectric (TE) devices are comprised of solid-state p-type and n-type semiconductors paired in an electrical circuit and exposed to a temperature gradient. The effectiveness of the materials is evaluated based on the mathematical term ZT=T∙S^2 σ/κ: S represents the Seebeck coefficient; σ represents the electrical conductivity; κ is the thermal conductivity; and T is the average of the coldest and hottest regions of the applied gradient. This ZT term is larger for better materials; most modern devices in use to-date display ZT values on the order of one. A large temperature gradient combined with a large Z term will lead to a high-performance TE material that involves no waste, no side product, and no requirement for moving parts. Discovery and optimization of new thermoelectric materials is a critical component of current thermoelectric research. As such, researchers are constantly searching for a new material that has the following properties: the ability to withstand higher temperatures, thus maximizing the T term; exhibit a large Seebeck coefficient and electrical conductivity through doping techniques; and present minimal thermal conductivity, κ. In recent years, research attention has moved from S^2σ to κ, which can be optimized through a variety of techniques including complex crystal structure, heavy element inclusion, and introduction of structural defects such as nanodomains/nanostructuring. Due to their tendency to form complex crystal structures and bonding, Te-based materials have become popular targets for TE research and optimization. Compounds with Te anions that also include other heavy elements such as alkali (A) metals, alkaline earth (R) elements, or heavy p-block elements including the triels (Tr), tetrels (Tt), or pnictogens (Pn) have become a principal source of new and ground-breaking thermoelectric materials. Likewise, optimization of existing TE materials with these aforementioned compositions has led to ZT values twice those of the materials' original reports. Of the known TE materials, Bi2Te3 is one of the staples in the field. It shows narrow band-gap semiconducting properties that can be tuned to p- or n-type values based on the impurities introduced, and its κ values are inherently low due to the presence of heavy elements and their structural layering motifs. A series of compounds, (SnTe)x(Bi2Te3)y, based on this idea can be produced via the alteration of x:y. In this work, several of these compounds are introduced and studied as potentially useful thermoelectric materials: SnBi2Te4, SnBi4Te7, and SnBi6Te10 are the major targets because of their systematic layering motifs and complex structures. Phase range studies, crystal structure (Rietveld) refinements, and synthesis optimizations were commenced to ensure that the materials were well-characterized and produced phase-pure before the attempted ZT improvements. By altering the quantity of active charge carriers in these systems, changes in ZT can be observed – this is achieved through doping with, primarily, heavy Tr elements Ga, In, and Tl. Thusly, the physical properties are measured and compared for a number of series: [Tr]xSn1-xBi2Te4, [Tr]xSnBi2-xTe4, [Tr]xSn1-xBi4Te7, [Tr]xSnBi4-xTe7, [Tr]xSn1 xBi6Te10, and [Tr]xSnBi6-xTe10. Of the triels, Tl is the largest useful element in the group and is known for showing both Tl+ and Tl3+ cationic states and, in thermoelectric applications, for possessing uniquely low κ values. Thallium telluride compounds such as Tl5Te3 are therefore quite relevant to this field. The family of compounds includes Tl9BiTe6 – one of the better materials with ZT = 1.2 (500 K) using a hot-pressed pellet. Herein, the system is expanded to include Tl10-xSnxTe6 which shows good TE potential with ZT(Tl7.8Sn2.2Te6) = 0.6 (617 K) with a cold-pressed pellet. The incorporation of tetrel elements is investigated through measurements on Tl10-x-ySnxBiyTe6 and also applies to the lesser-studied Tl9SbTe6 compound via research on the systems Tl9SnxSb1 xTe6 and Tl9PbxSb1 xTe6. Tl is studied in three concentrations with Tl10 x ySnxBiyTe6: Tl9…, Tl8.67…, and Tl8.33…, with varying Sn:Bi at each increment. Tt elements are systematically added to the Tl9[Tt]xSb1 xTe6 structure with 0.0 ≤ x ≤ 0.7. Crystallographic studies, electronic structure calculations, and physical properties are explored for each series. Due to Te’s ability to form complex Te–Te interactions in certain environments, the combination of alkaline earth metals, namely R = Ba, with the coinage metals (Cg = Cu, Ag), chalcogenides (Q = S, Se), and Te, form a plethora of previously unknown crystal structures. Many of these are Zintl-phase narrow-band gap semiconductors with complex Cg–Cg and Q–Q bonding schemes – combined with their heavy element incorporation, the family is of great interest to the thermoelectrics community. Within this thesis, three new crystal systems are presented: Ba3Cu17-x(Se,Te)11; Ba3Cu17-x(S,Te)11 and Ba3Cu17-x(S,Te)11.5; and Ba2Cu7-xTe6. All structures show Cu-deficiencies in their crystal structures with d10–d10 interactions and 3-dimensional networks of the Cg metal. The chalcogenide elements in the structures display unique Q–Q or Te–Te bonding of varying dimensionality. The electronic structures and bonding calculations are reported for each compound, as are the single crystal studies. The first two of the aforementioned compounds are narrow-band gap semiconductors, whereas the latter two display metallic behaviour.

The increase in waste heat after consuming energy or burning fossil fuels is an issue environmentally and economically. Thermoelectric (TE) materials are developed to use in various applications because of their ability in converting waste heat into electricity. However, the applications are limited due to a low efficiency of materials, and research on thermoelectric materials is an on-going project for future use. Type-I clathrates are one of the TE materials which are studied in depth since the proposal of Slack’s PGEC (Phonon-Glass-Electron-Crystal) concept in 1995 due to their excellent thermoelectric properties. In this study, development and optimization of quaternary type-I clathrates will be the focus because double substitution often leads to better figure-of-merit, ZT, but it hasn’t really been studied. Higher ZT value is necessary because the energy conversion efficiency of TE materials is depending on the ZT value along with a larger temperature difference. Addition of lanthanoid elements as 2nd guest atoms to the main type-I clathrate structure, realized in Ba8Ga16Ge30, will be attempted to form quaternary compounds. The formation of the quaternary clathrates will be analyzed through powder X-ray diffraction, single crystal analysis and energy dispersive X-ray analysis. Also, as the performance of TE materials is examined through the figure of merit, ZT = TS²σ/κ, various techniques will be used to determine the Seebeck coefficient, the electrical conductivity and the thermal conductivity. The quaternary clathrates, Ba8-xLnxGa16Ge30 and Ba8-xLnxGa16+xGe30-x, where Ln = La, Ce and Eu were synthesized from the pure elements in stoichiometric ratios at 1000°C with slow cooling to room temperature. The products were then annealed at 600°C to acquire homogeneous samples for analyses. The various compositions of lanthanoid were intercalated into the structure of clathrates, which resulted in the quaternary clathrates with homogeneity. The crystal structure of quaternary clathrates with the space group of Pm-3n exhibited the same structure type as the ternary clathrates. The successfully formed products were refined with Rietveld refinements to understand their structures. The Eu containing clathrates crystallized with a lattice parameter a = 10.78251(6) Å, V = 1253.60(2) ų, for x = 0.3. The Ce containing clathrates also adopted the same space group with a lattice parameter a = 10.77331(6) Å, V = 1250.40(2) ų, for x = 0.3. The La containing clathrates formed with a lattice parameter a = 10.78494(6) Å, V = 1254.45(2) ų, for x = 0.3. Between 0.2 and 1.0 lanthanoid elements per formula unit were substituted with decreasing amount of barium where the actual amount of Ln in clathrates was lower than nominal amount. All these quaternary clathrates were found to be n-type semiconductors as determined through the Seebeck coefficient and electrical conductivity measurements.

Thesis (M.S.)--University of Texas at El Paso, 2007. / Title from title screen. Vita. CD-ROM. Includes bibliographical references. Also available online.

Thesis (M.S. - Mechanical Engineering)--University of Arizona. / Includes bibliographical references.

Thesis (Ph.D.)--University of Wollongong, 2004. / Typescript. Includes bibliographical references: leaf 156-164.

Thesis (Ph. D.)--Michigan State University. Dept. of Chemistry, 2006. / Title from PDF t.p. (viewed on June 19, 2009) Includes bibliographical references. Also issued in print.

Thesis (M.S.)--Michigan State University. Materials Science and Engineering, 2008. / Title from PDF t.p. (viewed on Aug. 7, 2009) Includes bibliographical references (p. 151-159). Also issued in print.