The objective of the research presented in this thesis is to develop, implement, and demonstrate the utility of an n-sheet, state-space alternating-current thin-film electroluminescent (ACTFEL) device model. In this model, the phosphor layer is discretized into n + 1 layers, with band-to-band impact ionization, space charge creation/ annihilation, and luminescent impurity excitation/do-excitation occurring only at n sheets between the n + 1 layers. The state-space technique is a structured approach in which the ACTFEL device physics implementation is separated from the ACTFEL measurement circuit electrical response, resulting in a set of coupled, first-order differential equations which are numerically evaluated. The device physics implementation begins with electron injection from phosphor/insulator interfaces and band-to-band impact ionization. Phosphor layer space charge generation via band-to-band impact ionization and subsequent hole trapping, trap-to-band impact ionization, and shallow donor trap emission are then added to the model. Finally, impact excitation and radiative relaxation are added to the model to account for ACTFEL device optical properties. The utility of the n-sheet, state-space ACTFEL device model is demonstrated in simulations which verify hypotheses regarding ACTFEL device measured characteristics. The role of phosphor layer hole trapping and subsequent thermionic emission in SrS:Cu ACTFEL device EL thermal quenching is verified via simulation. Leaky ACTFEL device insulators are shown to produce high luminance but low efficiency. A novel space charge estimation technique using a single transferred charge curve is presented and verified via simulation. Hole trapping and trap-to-band impact ionization are shown to produce realistic overshoot in C-V curves, and each results in a different phosphor layer space charge distribution. DC coupling of the sense capacitor used in the measurement circuit to the applied voltage source is required for the generation of ACTFEL device electrical offset, as verified by simulation. Shallow donors are identified as a probable SrS:Ce ACTFEL device leakage charge mechanism. A field-independent emission rate time constant model is shown to yield realistic ZnS:Mn ACTFEL device leakage charge trends. / Graduation date: 2001

The goal of this thesis study is to develop an activated reactive evaporation (ARE) system and to demonstrate its utility by fabricating-alternating current thin-film electroluminescent (ACTFEL) oxide phosphor devices. ARE entails evaporation in an activated gas. The main ARE system components are three thermal evaporation sources, a microwave power supply, an electron cyclotron resonance plasma (ECR) source, a substrate heater/controller, a film thickness monitor, and a leak valve for gas flow control. Ga���0���:Eu ACTFEL devices are fabricated using the ARE system. The maximum Ga���O: deposition rate is approximately 2 nm/s. As-deposited films are transparent, insulating, and amorphous with an index of refraction of 1.68 and an optical bandgap of 4.25-4.9 eV. Ga���O��� films are typically amorphous until annealed above 1000��C in a furnace or by rapid thermal annealing. However, when hydrothermal annealing is employed, Ga���O��� films crystalize at temperatures as low as 450��C. Electrical and optical characterization indicates that the Ga���O���:Eu ACTFEL devices have very little charge transfer and emit very dim, orange-red electroluminescence with an emission peak of about 615 nm. / Graduation date: 2001

Graduation date: 1997

During the evaporative deposition of polycrystalline thin films, the development of a tensile stress at small film thicknesses is associated with island coalescence. Several continuum models exist to describe the magnitude of this tensile stress but the coalescence stress becomes significant at small enough thicknesses to draw the continuum models into question. For nanometer-sized islands, we perform atomistic simulations of island coalescence to determine if the atomistic methods and continuum models are mutually consistent. The additional detail provided by the atomistic simulations allows for study of the kinetics of island coalescence and the treatment of different crystallographic orientations. We find that the atomistic simulations are consistent with the continuum models. We also note that the atomistic simulations predict extremely fast coalescence times and include the possibility of island rotations during coalescence. / Singapore-MIT Alliance (SMA)

Polycrystalline films are used in a wide array of micro- and nano-scale devices, for electronic, mechanical, magnetic, photonic and chemical functions. Increasingly, the properties, performance, and reliability of films in these systems depend on nano-scale structure. In collaborative research with a number of SMA Fellows, Associates, and students, our group is carrying out research focused on probing, modeling and controlling nano-scale structural evolution during both vapor-phase and solid-phase polycrystalline film formation. In particular, high-sensitivity in-situ and real-time stress measurements are being used to study atomic scale forces and to characterize structure formation and evolution at the nano-scale. In other collaborative research, the affects of controlled structure and multi-film architectures on properties, such as piezoelectric characteristics and electromigration-limited reliability, are being explored. Through these interrelated activities, basic principles of the science and engineering of nano-scale materials are emerging. / Singapore-MIT Alliance (SMA)

A new computational method is introduced to investigate the stresses developed in the island-coalescence stage of polycrystalline film formation during deposition. The method uses molecular dynamics to examine the behavior of clusters of atoms both in free space and on substrates. Continuum treatments used in previous models may not be applicable at small length scales or low dimensionality. In atomistic simulations, the effects of surface diffusion, bond straining and defect formation can be directly studied. TEM experiments will be used to evaluate the validity of the simulation model. / Singapore-MIT Alliance (SMA)

Research on the processing, structure, properties and reliability of metal films and metallic microdevice elements is reviewed. Recent research has demonstrated that inelastic deformation mechanisms of metallic films and microelements are a function of temperature, encapsulation, and dimension. Reduced dimension can lead to strengthening or softening, depending on the temperature and strain rate. These results will help in the analysis and prediction of the stress state of films and microelements as a function of their thermal history. Experimental characterization and modeling of stress evolution during film formation has also been undertaken. New microelectromechanical devices have been developed for in situ measurements of stress during processing, and experiments relating stress and structure evolution are underway for electrodeposition and reactive film formation as well as vapor deposition. Experiments relating current-induced stress evolution (electromigration) to the reliability of Cu based interconnects are also being carried out. / Singapore-MIT Alliance (SMA)

Thesis (Ph. D.)--University of Washington, 1985. / Vita. Bibliography: leaves [135]-145.

Thesis (Ph. D.)--Georgia State University, 2006. / Title from title screen. Nikolaus Dietz, committee chair; Brian Thoms, Mark Stockman, Vadym Apalkov, Douglas Gies, committee members. Electronic text (167 p. : ill. (some col.)). Description based on contents viewed Apr. 24, 2007. Includes bibliographical references (p. 162-167).

Thesis (M.M.S.E.)--University of Delaware, 2006. / Principal faculty advisors: Robert L. Opila and Robert W. Birkmire, Dept. of Materials Science & Engineering. Includes bibliographical references.