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Solar cells are at the frontier of renewable energy technologies. Photovoltaic energy is clean, reusable, can be used anywhere in our solar system and can be very well integrated with power distribution grids and advanced technological systems. Thin film solar cells are a class of solar cells that offer low material cost, efficient fabrication process and compatibility with advanced electronics. However, as of now, the conversion efficiency of thin film solar cells is inferior to that of thick crystalline cells. Research efforts to improve the performance bottlenecks of thin film solar cells are highly motivated. A class of techniques towards this goal is called light trapping methods, which aims at improving the spectral absorptivity of a thin film cell by using surface texturing. The precise mathematical and physical characterization of these techniques is very challenging. This dissertation proposes a numerical and computational framework to optimize, design, and fabricate efficient light trapping structures in thin film solar cells, as well as methods to verify the fabricated designs. The numerical framework is based on the important "inverse optimization" technique, which is very is widely applicable to engineering design problems. An overview of the state-of-the-art thin film technology and light trapping techniques is presented in this thesis. The inverse problem is described in details with numerous examples in engineering applications, and is then applied to light trapping optimization. The proposed designs are studied for sensitivity analysis and fabrication error, as other aspects of the proposed computational framework. At the end, reports of fabrication, measurement and verification of some of the proposed designs are presented. / text

Thesis advisor: Michael J. Naughton / Surface plasmon polaritons (SPPs) are hybridized quasiparticles of photons and electron density waves. They are confined to propagate along metal-dielectric interfaces, and decay exponentially along the direction perpendicular to the interfaces. In the past two decades, SPPs have drawn intensive attention and undergone rapid development due to their potential for application in a vast range of fields, including but not limited to subwavelength imaging, biochemical/biomedical sensing, enhanced light trapping for solar cells, and plasmonic logic gates. These applications utilize the following intrinsic properties of SPPs: (1) the wavelength of SPPs is shorter (and can be much shorter) than that of free photons with the same frequency; (2) the local electric field intensity associated with SPPs can be orders of magnitude larger than that of free photons; and (3) SPPs are bound to metal surfaces, and are thus easily modulated by the geometry of those surfaces. Here, we present studies on SPPs along metal surfaces with novel structures, including the following: (1) SPP standing waves formed along circular metal surfaces that lead to a "plasmonic halo" effect; (2) directional reflectionless conversion between free photons and SPPs in asymmetric metal-insulator-metal arrays; and (3) broadband absorbance enhancement of embedded metallic nanopatterns in a photovoltaic absorber layer. These works may prove useful for new schemes for SPP generation, plasmon-photon modulation, ultrasensitive dielectric/bio sensing, and high efficiency thin film solar cells. / Thesis (PhD) — Boston College, 2014. / Submitted to: Boston College. Graduate School of Arts and Sciences. / Discipline: Physics.

This work mainly investigates the use of aerosol assisted chemical vapour deposition (AACVD) process to fabricate thin film materials for energy efficient glazing and thin film solar cells applications. Ga-doped ZnO thin films were firstly deposited onto glass substrates by AACVD of zinc and gallium acetylacetonates in methanol. After optimizing the doping concentration, film thickness and heating temperature, ZnO:Ga coatings with high visible transparency (> 80 %) and infrared reflection (up to 48.9 % at 2500 nm) were obtained, which is close to the optical requirements for commercial energy saving glazing. Pyramid-shaped and plate-shaped zinc oxides films were then deposited on glass substrates by AACVD of zinc-acetate-dihydrate, acetic acid and deionized water in methanol. These surface-textured ZnO films exhibited good visible transparency (~70 %), low sheet resistance (~60 Ω sq-1) and ultra large haze factor (up to 98.5 %), which is the most hazy ZnO ever reported and can be potentially used as the front contact in thin-film solar cells. Finally, uniform compact CH3NH3PbI3 perovskite films with high phase purity and micron-sized pinhole-free grains were deposited on glass substrates by a novel two-step and three-step sequential AACVD process. In conclusion, AACVD shows a great potential for the scalable fabrication of ZnO-based and organometallic halide-based thin film materials.

The buffer layer is a crucial component in thin film solar cells. Defects at the interface between absorber and buffer layer lead to high recombination rate and the band structure at the interface highly affects the performance of the solar cell. In this thesis a method to synthesize thin films containing cadmium, zinc and sulfur, CdZnS, by chemical bath deposition has been developed and evaluated. A higher current from the device is expected when replacing the common buffer layer cadmium sulfide, CdS, with the more transparent CdZnS. It is also possible that the alternative buffer provides a more favorable energy band alignment at the interface with the absorber Copper-Zinc-Tin-Sulfide (CZTS). The deposition process was developed by studying depositions on glass. Increasing [Zn2+]/[Cd2+] initially led to films with higher band gap (Eg). By varying deposition time the time before colloidal growth became dominant was observed. Addition of triethanolamine showed that triethanolamine binds stronger to zinc ions than to cadmium ions. Two recipes that led to Eg=2.63 eV were evaluated as buffer layer in Copper-Indium-Gallium-Selenide (CIGSe) and CZTS solar cells. The short circuit current of the devices increased in general with the CdZnS buffers compared to CdS. The best CZTS cell with a CdZnS buffer layer had 7.7 % efficiency compared to the 7.5 % reference. For future research it is recommended that the effect of thickness variation and deposition temperature is evaluated and that additional material characterization is performed in order to further understand and develop the deposition method.

One of the poly-Si thin-film cells developed at the University of New South Wales (UNSW) is the EVA cell. In this work, SiN films for EVA cells as an antireflection/barrier coating were investigated. In addition, the effect of hydrogenation pre-treatment of solid phase crystallisation (SPC) on grain size and open-circuit voltage (Voc) was investigated. The SiN films deposited by PECVD were examined for uniformity of the thickness and the refractive index of the films across the position of the samples in the PECVD deposition system. A spectrophotometric analysis was used to determine these film properties. It was found that these properties were very uniform over the deposition area. Good repeatability of the depositions was also observed. A series of SiN film depositions by reactive sputtering were also performed to optimize the deposition process. Parameters adjusted during the deposition were nitrogen flow rate, substrate bias, and substrate temperature. By investigating the deposition rate, refractive index, and surface roughness of the films, the three deposition parameters were optimised. The effects of post SiN deposition treatments (a-Si deposition, SPC, RTA, and hydrogenation) on thickness and refractive index of both SiN films deposited by PECVD and reactive sputtering were investigated by using samples which have the same structure as the EVA cells. The thickness of the PECVD SiN films decreased about 6 % after all the treatments. On the other hand, the thickness reductions of the reactively sputtered SiN films were very small. The refractive index of the PECVD SiN films increased about 0.6 % after the treatments, whereas that of the reactively sputtered SiN films decreased 1.3 % after the treatments. As a possible method to improve the performance of EVA cells, hydrogenation of a-Si was investigated as a pre-treatment of SPC process. There were no obvious differences in the grainsize and the Voc of the EVA cells with and without the hydrogenation. Therefore it is likely that the hydrogenation pre-treatment of SPC does not have a beneficial effect on the performance of EVA cells.

The cost of photovoltaic electricity needs to be significantly reduced in order to achieve a high electricity market penetration. Thin-film solar cells have good potential to achieve such cost savings though (i) large-area deposition onto low-cost foreign substrates, (ii) more streamlined processing, (iii) monolithic cell interconnection, and very efficient use of the expensive semiconductor material. Polycrystalline silicon (poly-Si) on glass is a promising technology for the cost-effective large volume production of PV modules since it (i) makes use of an abundant raw material, (ii) is non-toxic, (iii) does not suffer from light-induced degradation, and (iv) does not rely on TCO layers. Usually plasma enhanced chemical vapour deposition (PECVD) is used for the layer formation. This thesis explores the use of e-beam evaporation as deposition method since it is potentially much faster and cheaper than PECVD. The resulting solar cells are referred to as EVA (from EVAporation). Two inherent shunting mechanisms in EVA cells are demonstrated to be shunting through sub-micron sized pinholes when the back electrode is deposited and shunting between the emitter and the absorber layer at the glass-side electrode. Through the improved understanding of these shunting mechanisms it was possible to develop a suitable metallisation scheme for EVA cells using an aligned deposition of emitter and back surface field line contacts and a specially developed shunt mitigation etching technique. For the first time appreciable efficiencies of up to 5.2% were demonstrated on this material. It was also shown that only very lightly doped absorber layers can lead to the required high short-circuit currents in EVA cells. The resulting cells are currently completely limited by space charge region recombination occurring with comparatively low ideality factors of only ~ 1.4 This thesis also demonstrates the usefulness of Jsc-Suns measurements and investigates optical loss mechanisms in the current devices. Advanced modelling of distributed series resistance effects, influencing Suns-Voc, m-Voc and Jsc-Suns curves, is employed. PC1D modelling is used to extract relevant device parameters. In this work it was found that the diffusion length in the best EVA cells is longer than the absorber layer and that insufficient light trapping is currently the major hurdle to higher cell efficiencies. From the obtained results it can be concluded that EVA solar cells are promising candidates for the low-cost and high-volume production of solar modules.

Thin-film solar cells are widely recognised to have the potential to compete with fossil fuels in the electricity market due to their low cost per peak Watt. The Thin-Film Group at the University of New South Wales (UNSW) is engaged in developing polycrystalline silicon (poly-Si) thin-film solar cells on glass using e-beam evaporation technology. We believe our solar cells have the potential of significantly lowering the manufacturing cost compared to conventional, PECVD-fabricated thin-film solar cells. After years of materials research, the focus of the Group??s work is now moving to the metallisation of evaporated solar cells. Minimising various kinds of losses is the main challenge of the cell metallisation procedure, within which the contact resistance is always a big issue. In this thesis, the contact resistance of aluminium contacts on poly-Si thin-film solar cells on glass is investigated. To the best of the author??s knowledge, this is the first ever contact resistance investigation of Al contacts on evaporated poly-Si material for photovoltaic applications. Various transmission line models (TLM) are employed to measure the contact resistance. An improved TLM model is developed to increase the measurement precision and, simultaneously, to simplify the TLM pattern fabrication process. In order to accommodate the particular requirements of poly-Si coated glass substrates, a TLM pattern fabrication process using photolithography is established. Furthermore, a Kelvin sense tester is set up to ensure an accurate measurement of the contact resistance. After establishment of the TLM technique at UNSW, it is successfully tested on singlecrystalline silicon wafer samples. The thermal annealing process of the contacts is also optimised. Then, the general behaviour of Al contacts on uniformly doped poly-Si films (i.e., no p-n junction) is investigated using the verified TLM technique. The long-term stability of the contacts is also studied. This is followed by an investigation of the contact resistance of the back surface field and emitter layers of different types of poly-Si thin-film solar cells. Finally, a novel contact resistance measurement model is proposed that is believed to be able to overcome the measurement bottleneck of the transmission line models.