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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 141 to 150 of 3347 (0.037 seconds)Spelling suggestions: "subject:"then films""
| 141 |
Radio frequency glow discharge sputtering of thin filmsPeters, Timothy John, 1950- January 1973 (has links)
No description available.
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| 142 |
Optical properties of chemical vapor depositions of silicon oxynitride filmsGrahn, Norman Donald, 1940- January 1974 (has links)
No description available.
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| 143 |
Fabrication of thin film structures for launching elastic surface waves.Close, Anthony Derek. January 1967 (has links)
No description available.
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| 144 |
Growth dynamics of amorphous and crystalline thin filmsBales, Gary Steven 12 1900 (has links)
No description available.
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| 145 |
Microstructural configuration influence on electromigration in Sn/Cu thin filmsXu, Yi 12 1900 (has links)
No description available.
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| 146 |
An experimental investigation of the spreading, durability and maintainability of monolayer films for evaporation suppression from stationary watr poolsPauken, Michael T. 05 1900 (has links)
No description available.
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| 147 |
Structure and properties of sputtered ZnO transducers.Fahmy, Aly Hassan. January 1971 (has links)
No description available.
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| 148 |
Low temperature growth of Amorphous Silicon thin film.Malape, Maibi Aaron. January 2007 (has links)
<p>The growth of amorphous hydrogenated silicon (a-Si:H) thin films deposided by hot wire chemical vapor deposition (HWCVD) has been studied. The films have been characterised for optical and structural properties by means of UV/VIS,FITR,ERDA, XRD.XTEM and Raman spectroscopy. Low subtrate heater temperatures in the range form 130 to 200 degrees celcius were used in this thesis because it is believed to allow for the deposition of device quality a-Si:H which can be used for electronic photovoltaic devices. Furthermore, low temperatures allows the deposition of a-Si:H on any subtrate and thus offers the possibility of making large area devices on flexible organic substances. We showed that the optical and structural properties of grown a-Si:H films depended critically upon whether the films were produced with silane gas or silane diluted with hydrogen gas. We also showed that it is possible to to deposit crystalline materials at low temperature under high hydrogen dilution ratio of silane gas.</p>
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| 149 |
Prediction of thin films obliquely deposited in rotating recessed conesFraser, Samuel Carroll 08 1900 (has links)
No description available.
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| 150 |
Selected Electrical Properties of R.F. Sputtered Al₂O₃-Cr₂O₃ Thin FilmsBechtold, Bryant Coffin 05 1900 (has links)
No description available.
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