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High frequency analysis of silicon RF MOS transistors /Ankarcrona, Johan, January 2005 (has links)
Diss. (sammanfattning) Uppsala : Uppsala universitet, 2005. / Härtill 7 uppsatser.
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Design and characterization of RF-power LDMOS transistors /Bengtsson, Olof, January 2008 (has links)
Diss. (sammanfattning) Uppsala : Univ., 2008. / Härtill 8 uppsatser.
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Polarization characteristics in polyelectrolyte thin film capacitors : targeting field-effect transistors and sensors /Larsson, Oscar, January 2009 (has links)
Licentiatavhandling (sammanfattning) Linköping : Linköpings universitet, 2009. / Härtill 3 uppsatser.
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Carbon nanotube transistors : nanotube growth, contact properties and novel devices /Svensson, Johannes. January 2010 (has links)
Diss. (sammanfattning) Göteborg : Göteborgs universitet, 2010. / Härtill 6 uppsatser.
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Design of measurement circuits for SiC experiment : KTH student satellite MIST / Konstruktion av mätkretsar för SiC-experimentetEricson, Matthias, Silverudd, Johan January 2016 (has links)
SiC in Space is one of the experiments on KTH’s miniature satellite, MIST. The experiment carries out tests on bipolar junction transistors of silicon and silicon carbide. This thesis describes how the characteristics of a transistor can be measured using analog circuits. The presented circuit design will work as a prototype for the SiC in Space experiment. The prototype measures the base current, the collector current, the base-emitter voltage as well as the temperature of the transistor. This thesis describes how a test circuit may be designed. The selected design has been constructed in incremental steps, with each design choice explained. Different designs have been developed. The designs have been verified with simulations. We have also constructed and tested three different prototypes on breadboards and printed circuit boards. / SiC in Space är ett av experimenten på KTHs miniatyrsatellit, MIST. Experimentet utför test på bipolära transistorer av kisel och kiselkarbid. Detta examensarbete förklarar hur transistorns karakteristik kan mätas med analoga kretsar. Den framtagna kretsdesignen kommer att fungera som en prototyp till SiC in Space-experimentet. Prototypen mäter basströmmen, kollektorströmmen, bas-emitter-spänningen samt temperaturen för transistorn. Detta examensarbete förklarar hur en testkrets kan designas. Den valda designen byggs i inkrementella steg, där varje designval förklaras. Olika designer har utvecklats. Designerna har verifierats genom simuleringar. Vi har också konstruerat och testat tre olika prototyper på kopplingsdäck och kretskort.
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