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Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronicsMunsee, Craig L. 14 June 2005 (has links)
The long-term goal of this research project is the development of solution-based
inorganic dielectric and semiconductor materials for inkjet printed electronics.
The main focus of this thesis involves testing of the materials and devices
under development.
A new solution-based inorganic dielectric material (HfOSO₄), given the
name hafsox, is developed and shows excellent dielectric properties. Hafsox with
the addition of lanthanum, to improve film dehydration, has successfully been
demonstrated as a gate dielectric. Metal-insulator-metal (MIM) capacitance testing
of hafsox with lanthanum, has resulted in a low loss tangent of 0.30% at 1
kHz, a relative permittivity of 11.47 at 1 kHz, a breakdown voltage of 6.30 MV
cm⁻¹, and a leakage current density of 4.38 nA cm⁻² at 1 MV cm⁻¹.
Progress has also been achieved in the development of solution-based semiconductor
materials. To date the most successful of these materials is zinc indium
oxide (ZIO), which has been demonstrated as a thin-film-transistor (TFT) channel
material. This ZIO TFT is a depletion-mode device with a turn-on-voltage
of V[subscript on]~ -19 V, a threshold voltage of V[subscript T] ~-16 V, and a drain current on-to-off
ratio of ~10³. Mobilities extracted from this ZIO TFT include an incremental
mobility of μ[subscript inc] ~0.05 cm² V⁻' sec⁻', an effective mobility of μ[subscript eff] ~0.02 cm²
V⁻' sec⁻', and an average mobility of μ[subscript avg] ~0.02 cm² V⁻' sec⁻' at V[subscript GS]=20 V.
The development of metal-semiconductor field-effect transistors (MESFET)
TFTs is also investigated as a means of eliminating the need for a dielectric
material in order to reduce the complexity of fabricating circuits. MESFETs are
attempted with semiconductor materials such as CdS that is deposited by chemical
bath deposition (CBD) and SnO₂ that is deposited by RF magnetron sputtering,
but with little success. The most successful MESFET-like device fabricated, employing
SnO₂ as the channel material, is a strong depletion-mode device with a
small amount of gate voltage modulation. / Graduation date: 2006
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Temperature robust programmable subthreshold circuits through a balanced force approachDegnan, Brian Paul 18 January 2013 (has links)
The subthreshold region of operation has simple physics which allows for a balanced-force approach to behavioral modeling that has shown to be robust to temperature, and a model that encapsulates MOSFET behavior across all operational regions has been developed. The subthreshold region of operation also allows for injection of charge onto floating nodes that allows for persistent storage that can be used in a variety of applications. The combination of charge storage and device modeling has allowed for the development of programmable circuits for digital applications.
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Etude, conception et réalisation de circuits de commande d'IGBT de forte puissanceLefranc, Pierre Chante, Jean-Pierre Bergogne, Dominique. January 2006 (has links)
Thèse doctorat : Génie Electrique : Villeurbanne, INSA : 2005. / Titre provenant de l'écran-titre. Bibliogr. p. 207-212.
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Quantum model of the modulation doped field effect transistorWiederspahn, H. Lee 05 1900 (has links)
No description available.
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Distributed-channel bipolar device : experimentation, analytical modeling and applicationsJiang, Fenglai January 1994 (has links)
Thesis (Ph. D.)--University of Hawaii at Manoa, 1994. / Includes bibliographical references (leaves 593-597). / Microfiche. / 2 v. (xliii, 597 leaves), bound ill. 29 cm
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Single event upset mechanisms for low-energy-deposition events in SiGe HBTsMontes, Enrique J. January 2007 (has links)
Thesis (M.S. in Electrical Engineering)--Vanderbilt University, Dec. 2007. / Title from title screen. Includes bibliographical references.
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3D device simulation of SEU-induced charge collection in 200 GHz SiGe HBTsYang, Hua, January 2005 (has links) (PDF)
Thesis--Auburn University, 2005. / Abstract. Vita. Includes bibliographic references.
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Critical analysis of SiC SIT design and performance based upon material and device propertiesSung, YunMo. January 2005 (has links)
Thesis (Ph.D.) -- Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.
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The reduction of contact resistance in AIGaN/GaN heterostructure field effect transistors /Amaya, Rony E. January 1900 (has links)
Thesis (M. Eng.)--Carleton University, 2002. / Includes bibliographical references (p. 76-81). Also available in electronic format on the Internet.
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Design of a complementary silicon-germanium variable gain amplifierJha, Nand Kishore January 2008 (has links)
Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: John D. Cressler; Committee Member: Joy Laskar; Committee Member: Kevin Kornegay
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