This thesis presents the development of CMOS readout electronics for microbolometer type infrared detector arrays. A low power output buffering architecture and a new bias correction digital-to-analog converter (DAC) structure for resistive microbolometer readouts is developed / and a 384x288 resistive microbolometer FPA readout for 35 &micro / m pixel pitch is designed and fabricated in a standard 0.6 &micro / m CMOS process. A 4-layer PCB is also prepared in order to form an imaging system together with the FPA after detector fabrication. The low power output buffering architecture employs a new buffering scheme that reduces the capacitive load and hence, the power dissipation of the readout channels. Furthermore, a special type operational amplifier with digitally controllable output current capability is designed in order to use the power more efficiently. With the combination of these two methods, the power dissipation of the output buffering structure of a 384x288 microbolometer FPA with 35 &micro / m pixel pitch operating at 50 fps with two output channels can be decreased to 8.96% of its initial value. The new bias correction DAC structure is designed to overcome the power dissipation and noise problems of the previous designs at METU. The structure is composed of two resistive ladder DAC stages, which are capable of providing multiple outputs. This feature of the resistive ladders reduces the overall area and power dissipation of the structure and enables the implementation of a dedicated DAC for each readout channel. As a result, the need for the sampling operation required in the previous designs is eliminated. Elimination of sampling prevents the concentration of the noise into the baseband, and therefore, allows most of the noise to be filtered out by integration. A 384x288 resistive microbolometer FPA readout with 35 &amp / #956 / m pixel pitch is designed and fabricated in a standard 0.6 &amp / #956 / m CMOS process. The fabricated chip occupies an area of 17.84 mm x 16.23 mm, and needs 32 pads for normal operation. The readout employs the low power output buffering architecture and the new bias correction DAC structure / therefore, it has significantly low power dissipation when compared to the previous designs at METU. A 4-layer imaging PCB is also designed for the FPA, and initial tests are performed with the same PCB. Results of the performed tests verify the proper operation of the readout. The rms output noise of the imaging system and the power dissipation of the readout when operating at a speed of 50 fps is measured as 1.76 mV and 236.9 mW, respectively.

This thesis presents the design, fabrication and characterization of high performance and high fill factor surface micromachined uncooled infrared resistive microbolometer detectors which can be used in large format focal plane arrays (FPAs). The detector pixels, which have a pixel pitch of 25 &mu / m, are designed and fabricated as two-level structures using the enhanced sandwich type resistor while the active material is selected as Yttrium Barium Copper Oxide (YBCO). First level of the pixel structure is allocated for the formation of the support arms in order to obtain longer support arms hence lower thermal conductance values to get the desired high performance levels. The pixel body is built in the second level such that the fill factor and absorption of the detector is maximized. Structural and sacrificial layer thicknesses are also optimized in order to increase the absorption coefficient of the pixel in the 8-12 &mu / m wavelength range. The thermal simulations are conducted using finite element method (FEM) by CoventorWare software. The designed pixel has a fill factor of 92 % together with the thermal conductance and thermal time constant values calculated as 16.8 nW/K and 19.3 ms in the simulations, respectively. The pixels are fabricated at METU MEMS facilities after the design of a CMOS compatible process flow. All process steps are optimized individually to obtain the expected high performance. Characterization step of the pixels includes the measurements of temperature coefficient of resistance (TCR), noise and thermal conductance value together with the thermal time constant. Effective TCR of the pixel is measured as -2.81 %/K for a pixel with a support arm resistance of 8 k&Omega / and total resistance of 55 k&Omega / . The corner frequency of 1/f noise in the pixel is 9.5 kHz and 1.4 kHz under 20 &mu / A and 10 &mu / A current bias, respectively. The total rms noise is 192 pA within 8.4 kHz bandwidth for a current bias of 20 &mu / A. Thermal conductance, Gth, of the pixel is measured as 17.4 nW/K with a time constant of 17.5 ms. The measurement results indicate that the single pixels designed and fabricated in the scope of this thesis are applicable to large format FPAs in order to obtain a high performance imager. The expected NETD values are 33 mK and 36 mK for 384x288 and 640x480 format FPAs, respectively.

This work describes infrared (IR) photon detector techniques based on novel semiconductor device concepts and detector designs. The aim of the investigation was to examine alternative IR detection concepts with a view to resolve some of the issues of existing IR detectors such as operating temperature and response range. Systems were fabricated to demonstrate the following IR detection concepts and determine detector parameters: (i) Near-infrared (NIR) detection based on dye-sensitization of nanostructured semiconductors, (ii) Displacement currents in semiconductor quantum dots (QDs) embedded dielectric media, (iii) Split-off band transitions in GaAs/AlGaAs heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors. A far-infrared detector based on GaSb homojunction interfacial workfunction internal photoemission (HIWIP) structure is also discussed. Device concepts, detector structures, and experimental results discussed in the text are summarized below. Dye-sensitized (DS) detector structures consisting of n-TiO2/Dye/p-CuSCN heterostructures with several IR-sensitive dyes showed response peaks at 808, 812, 858, 866, 876, and 1056 nm at room temperature. The peak specific detectivity (D*) was 9.5E+10 Jones at 812 nm at room temperature. Radiation induced carrier generation alters the electronic polarizability of QDs provided the quenching of excitation is suppressed by separation of the QDs. A device constructed to illustrate this concept by embedding PbS QDs in paraffin wax showed a peak D* of 3E+8 Jones at ~540 nm at ambient temperature. A typical HEIWIP/HIWIP detector structures consist of single (or multiple) period(s) of doped emitter(s) and undoped barrier(s) which are sandwiched between two highly doped contact layers. A p-GaAs/AlGaAs HEIWIP structure showed enhanced absorption in NIR range due to heavy/light-hole band to split-off band transitions and leading to the development of GaAs based uncooled sensors for IR detection in the 2 5 μm wavelength range with a peak D* of 6.8E+5 Jones. A HIWIP detector based on p-GaSb/GaSb showed a free carrier response threshold wavelength at 97 µm (~3 THz)with a peak D* of 5.7E+11 Jones at 36 μm and 4.9 K. In this detector, a bolometric type response in the 97 - 200 µm (3-1.5 THz) range was also observed.