Transition metal oxides (TMO) have proven to exhibit novel properties such as high temperature superconductivity, magnetic ordering, charge and spin density waves, metal to insulator transitions and colossal magnetoresistance. Among these are a spin-orbit coupling (SOC) induced Mott insulator Sr2IrO4. The electric transport properties of this material remain finite even at cryogenic temperatures enabling its complex electronic structure to be investigated by a scanning tunneling microscope. At T = 77 K, we observed two features which represent the Mott gap with a value of 2D ~ 615 meV. Additionally an inelastic loss feature was observed inside this gap due to a single magnon excitation at an energy of ~ 125 meV. These features are consistent with similar measurements with other probes. In addition to these features, at T = 4.2 K lower energy features appear which are believed to be due to additional magnetic ordering. Another material that exhibits a unique physical behavior is the sliding charge density wave (CDW) material TaS3. It is a quasi-one dimensional material that forms long narrow ribbon shaped crystals. It exhibits anomalies including non-ohmic conductivity, a decrease in the Young’s modulus, a decrease in the shear modulus and voltage induced changes in the crystal’s overall length. In addition, we have observed the torsional piezo-like response, voltage induced torsional strain (VITS), in TaS3 which was first discovered by Pokrovskii et. al. in 2007. Our measurements were conducted with a helical resonator. The VITS response has a huge effective piezoelectric coefficient of ~ 104 cm/V. In addition we have concluded that the VITS is a very slow response with time constants of ~ 1 s near the CDW depinning threshold, that these time constants are dependent on the CDW current, and we suggest that the VITS is due to residual twists being initially present in the crystal.

The charge-density-wave (CDW) material orthorhombic tantalum trisulfide (TaS3) is a quasi-one dimensional material that forms long ribbon shaped crystals, and exhibits unique physical behavior. We have measured the dependence of the hysteretic voltage-induced torsional strain (VITS) in TaS3, which was first discovered by Pokrovskii et. al. in 2007, on temperature and applied torque. Our experimental results shows that the application of torque to the crystal could also change the VITS time constant, magnitude, and sign. This suggests that the VITS is a consequence of residual torsional strain originally present in the sample which twists the polarizations of the CDW when voltage is applied. This polarization twist then results in torque on the crystal. Another group of materials that may attract interest is that of small-molecule soluble organic semiconductors. Due to their assumed small phonon thermal conductivities and higher charge carrier mobilities, which will increase their seebeck coefficients with doping as compared to polymers, the small-molecule organic materials are promising for thermoelectric applications. In our experiments, we have measured the interlayer thermal conductivity of rubrene (C42H28), using ac-calorimetry. For rubrene, we find that the interlayer thermal conductivity, ≈ 0.7 mW/cm·K, is several times smaller than the (previously measured) in-plane value. Also, we have measured the interlayer and in-plane thermal conductivities of 6,13-bis((triisopropylsilyl)ethynyl) pentacene (TIPS-Pn). The in-plane value is comparable to that of organic metals with excellent π-orbital overlap. The interlayer (c-axis) thermal diffusivity is at least an order of magnitude larger than the in-plane, and this unusual anisotropy implies very strong dispersion of optical modes in the interlayer direction, presumably due to interactions between the silyl-containing side groups. Similar values for both in-plane and interlayer conductivities have been observed for several other functionalized pentacene semiconductors with related structures.