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Self-aligned graphene on silicon substrates as ultimate metal replacement for nanodevicesIacopi, Francesca, Mishra, N., Cunning, B.V., Kermany, A.R., Goding, D., Pradeepkumar, A., Dimitrijev, S., Boeckl, J.J., Brock, R., Dauskardt, R.H. 22 July 2016 (has links) (PDF)
We have pioneered a novel approach to the synthesis of high-quality and highly uniform few-layer graphene on silicon wafers, based on solid source growth from epitaxial 3C-SiC films [1,2]. The achievement of transfer-free bilayer graphene directly on silicon wafers, with high adhesion, at temperatures compatible with conventional semiconductor processing, and showing record- low sheet resistances, makes this approach an ideal route for metal replacement method for nanodevices with ultimate scalability fabricated at the wafer –level.
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Self-aligned graphene on silicon substrates as ultimate metal replacement for nanodevicesIacopi, Francesca, Mishra, N., Cunning, B.V., Kermany, A.R., Goding, D., Pradeepkumar, A., Dimitrijev, S., Boeckl, J.J., Brock, R., Dauskardt, R.H. 22 July 2016 (has links)
We have pioneered a novel approach to the synthesis of high-quality and highly uniform few-layer graphene on silicon wafers, based on solid source growth from epitaxial 3C-SiC films [1,2]. The achievement of transfer-free bilayer graphene directly on silicon wafers, with high adhesion, at temperatures compatible with conventional semiconductor processing, and showing record- low sheet resistances, makes this approach an ideal route for metal replacement method for nanodevices with ultimate scalability fabricated at the wafer –level.
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