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Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor deposition

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1. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1179171265

Identifer	oai:union.ndltd.org:OhioLink/oai:etd.ohiolink.edu:ohiou1179171265
Date	January 2000
Creators	Gao, Yungeng
Publisher	Ohio University / OhioLINK
Source Sets	Ohiolink ETDs
Language	English
Detected Language	English
Type	text
Source	http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1179171265
Rights	unrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.