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SiGe HBT BiCMOS RF front-ends for radar systems

The objective of this research is to explore the possibilities of developing transmit/receive (T/R) modules using silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology to integrate with organic liquid crystal polymer (LCP) packages for the next-generation phased-array radar system. The T/R module requirements are low power, compact, lightweight, low cost, high performance, and high reliability. All these requirements have provided a very strong motivation for developing fully monolithic T/R modules. SiGe HBT BiCMOS technology is an excellent candidate to integrate all the RF circuit blocks on the T/R module into a single die and thus, reducing the overall cost and size of the phase-array radar system. In addition, this research also investigates the effects and the modeling issues of LCP package on the SiGe circuits at X-band.

Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/45874
Date01 November 2011
CreatorsPoh, Chung Hang
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Detected LanguageEnglish
TypeDissertation

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