The objective of this research is to explore the possibilities of developing transmit/receive (T/R) modules using silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology to integrate with organic liquid crystal polymer (LCP) packages for the next-generation phased-array radar system. The T/R module requirements are low power, compact, lightweight, low cost, high performance, and high reliability. All these requirements have provided a very strong motivation for developing fully monolithic T/R modules. SiGe HBT BiCMOS technology is an excellent candidate to integrate all the RF circuit blocks on the T/R module into a single die and thus, reducing the overall cost and size of the phase-array radar system. In addition, this research also investigates the effects and the modeling issues of LCP package on the SiGe circuits at X-band.

Spacecloth design and development is vital and crucial in Radar Absorbing Materials (RAM) for achieving Low Observability in an Aircraft or an Unmanned Air Vehicle(UAV). The RAM design translates into the spacecloth design. The spacecloths form the constituent layers in a broadband Jaumann absorber in which case they have to be designed for various values of surface resistivity. The design specifications of spacecloth(s) in RAMS is well understood and documented in literature. But the design of spacecloth hitherto, has been the domain of materials' scientists wherein the specified properties of the spacecloth are achieved by an iterative, trial and error process, by mixing various constituents in different proportions to get the design specified surface resistivity in the final end-product. In an effort to bridge this gap, a novel spacecloth for RAM applications is proposed in the thesis. It is proposed that a repetitive geometrical grid network of chip resistors simulates spacecloth. The sheet resistivity of the spacecloth is derived by analyzing various geometries like square, rectangle, triangle and hexagonal grids. The transmission and reflection loss for the chip resistor spacecloth is derived. The design of chip resistor spacecloths for operation at S and C bands is given followed by experimental verification using waveguide simulator experiments. Numerical study of multilayer RAM has been carried out with exponential taper variation of surface resistivities for constituent spacecloth layers and design curves are given for multilayer RAM both for normal and oblique incidence for TE and TM polarizations.

RF switches are an essential building block in numerous applications, including tactical radar systems, satellite communications, global positioning systems (GPS), automotive radars, wireless communications, radio astronomy, radar transceivers, and various instrumentation systems. For many of these applications the circuits have to operate reliably under extreme operating conditions, including conditions outside the domain of commercial military specifications. The objective of this thesis is to present the design procedure, simulation, and measurement results for Radio Frequency (RF) switches in 130 nm Silicon Germanium (SiGe) BiCMOS process technology. The novelty of this work lies in the proposed new topology of an ultrahigh-isolation single-pole, single-throw (SPST) and a single pole, four-throw (SP4T) nMOS based switch for multiband microwave radar systems. The analysis of cryogenic temperature effects on these circuits and devices are discussed in this work. The results shows that several key-figures-of-merits of a switch, like insertion loss, isolation, and power handling capability (P1dB) improve at cryogenic temperatures. These results are important for several applications, including space-based extreme environment application where FET based circuits would need to operate reliably across a wide-range of temperature.