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1	Design of high-isolation and wideband RF switches in SiGe BiCMOS technology for radar applications Cardoso, Adilson S. 06 April 2012 (has links) RF switches are an essential building block in numerous applications, including tactical radar systems, satellite communications, global positioning systems (GPS), automotive radars, wireless communications, radio astronomy, radar transceivers, and various instrumentation systems. For many of these applications the circuits have to operate reliably under extreme operating conditions, including conditions outside the domain of commercial military specifications. The objective of this thesis is to present the design procedure, simulation, and measurement results for Radio Frequency (RF) switches in 130 nm Silicon Germanium (SiGe) BiCMOS process technology. The novelty of this work lies in the proposed new topology of an ultrahigh-isolation single-pole, single-throw (SPST) and a single pole, four-throw (SP4T) nMOS based switch for multiband microwave radar systems. The analysis of cryogenic temperature effects on these circuits and devices are discussed in this work. The results shows that several key-figures-of-merits of a switch, like insertion loss, isolation, and power handling capability (P1dB) improve at cryogenic temperatures. These results are important for several applications, including space-based extreme environment application where FET based circuits would need to operate reliably across a wide-range of temperature. Single-pole single-throw (SPST) Single-pole four-throw (SP4T) FET switch SiGe High isolation switch RF switch cryogenic effects FET cryogenic operation Radar switch design Radar microwave switch BiCMOS RF switch Radar Materials Germanium Integrated circuits
2	Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications Cardoso, Adilson Silva 12 January 2015 (has links) State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a wide variety of high performance and highly-integrated applications (e.g., system-on-chip (SOC), system-in-package (SiP)). Due to their bandgap-engineered base, SiGe HBTs are also naturally suited for cryogenic electronics and have the potential to replace the costly de facto technologies of choice (e.g., Gallium-Arsenide (GaAs) and Indium-Phosphide (InP)) in many cryogenic applications such as radio astronomy. This work investigates the response of mixed-signal circuits (both RF and analog circuits) when operating in extreme environments, in particular, at cryogenic temperatures and in radiation-rich environments. The ultimate goal of this work is to attempt to fill the existing gap in knowledge on the cryogenic and radiation response (both single event transients (SETs) and total ionization dose (TID)) of specific RF and analog circuit blocks (i.e., RF switches and voltage references). The design approach for different RF switch topologies and voltage references circuits are presented. Standalone Field Effect Transistors (FET) and SiGe HBTs test structures were also characterized and the results are provided to aid in the analysis and understanding of the underlying mechanisms that impact the circuits' response. Radiation mitigation strategies to counterbalance the damaging effects are investigated. A comprehensive study on the impact of cryogenic temperatures on the RF linearity of SiGe HBTs fabricated in a new 4th-generation, 90 nm SiGe BiCMOS technology is also presented. SiGe RF switches BiCMOS FET-based SOI PIN diode BiCMOS circuits Radiation hardening by design Transient response Transient radiation effects Extreme environments Mixed-signal circuits Silicon-germanium Single-pole single-throw(SPST) Single-pole four-throw(SP4T) Single-pole double-throw(SPDT) Voltage references Cryogenic temperatures Large-signal linearity Non-linearities Small-signal linearity Large-signal linearity Radiation Single event transient (SET) Total ionizing dose (TID) Radiation Precision voltage reference Bandgap reference (BGR) Bulk FET

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Design of high-isolation and wideband RF switches in SiGe BiCMOS technology for radar applications

Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications