L'environnement spatial constitue une contrainte radiative susceptible d'altérer le bon fonctionnement des dispositifs électroniques embarqués à bord des engins spatiaux, engendrant ainsi des défaillances. Dans le cadre de ces travaux, deux types de dysfonctionnements sont répertoriés : les effets cumulatifs dus à une accumulation continue d'énergie déposée tout au long d'une mission et les effets transitoires dus au passage d'une particule unique dans une zone sensible d'un composant ou à un dépôt d'énergie en un temps très court dans le cadre spécifique d'une explosion nucléaire exoatmosphérique. Lors des procédures de qualification des composants électroniques, ces deux effets sont traités séparément et ce, malgré une probabilité non négligeable qu'ils se produisent simultanément en vol. Ces travaux sont dédiés à l'étude de la synergie entre effets cumulatifs et effets transitoires sur différentes technologies bipolaires intégrées. Les résultats obtenus permettent de fournir des éléments de réponse sur l'éventualité d'une évolution des normes de test pour prendre en compte la menace que pourrait représenter ce phénomène. Ces travaux s'attachent également à étendre une méthodologie de simulation, basée sur une analyse circuit approfondie, dans l'optique de reproduire les perturbations transitoires « pire-cas » sur un amplificateur opérationnel à trois étages de plusieurs fabricants, survenues lors des tests sous faisceau laser, ions lourds et flash X. L'influence des effets cumulatifs sur la sensibilité des perturbations transitoires est prise en compte en faisant varier les paramètres internes du modèle en fonction de la dégradation de certains paramètres électriques issue des essais radiatifs des équipementiers. / The space environment is a radiative concern that affects on board electronic systems, leading to failures. It is possible to distinguish two types of effects: the cumulative effects due to continuous deposition of energy throughout the space mission and the transient effects due to the single energetic particle crossing a sensitive area of the component or deposition of energy in a very short time in the specific context of an exo-atmospheric nuclear explosion. During qualification procedures for space mission, these effects are studied separately. However, the probability that they occur simultaneously in flight is significant. As a consequence, this work is about the study of the synergy between both cumulative and transient effects on various integrated bipolar technologies. The present results are used to provide some answers about potential changes of test methods. This work also evaluates the predictive capability of the previously developed model to reproduce accurately both the fast and the long lasting components of transients in circuitry and so to model transients' effects. This simulation methodology is extended to an operational amplifier from different manufacturers and for three different synergistic effects. The comparison between transients obtained experimentally during heavy ions, pulse laser and flash X experiments and the predicted transients validates the investigated methodology. The cumulative effects are taken into account by injecting the internal electrical parameters variations using irradiation exposure.

State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a wide variety of high performance and highly-integrated applications (e.g., system-on-chip (SOC), system-in-package (SiP)). Due to their bandgap-engineered base, SiGe HBTs are also naturally suited for cryogenic electronics and have the potential to replace the costly de facto technologies of choice (e.g., Gallium-Arsenide (GaAs) and Indium-Phosphide (InP)) in many cryogenic applications such as radio astronomy. This work investigates the response of mixed-signal circuits (both RF and analog circuits) when operating in extreme environments, in particular, at cryogenic temperatures and in radiation-rich environments. The ultimate goal of this work is to attempt to fill the existing gap in knowledge on the cryogenic and radiation response (both single event transients (SETs) and total ionization dose (TID)) of specific RF and analog circuit blocks (i.e., RF switches and voltage references). The design approach for different RF switch topologies and voltage references circuits are presented. Standalone Field Effect Transistors (FET) and SiGe HBTs test structures were also characterized and the results are provided to aid in the analysis and understanding of the underlying mechanisms that impact the circuits' response. Radiation mitigation strategies to counterbalance the damaging effects are investigated. A comprehensive study on the impact of cryogenic temperatures on the RF linearity of SiGe HBTs fabricated in a new 4th-generation, 90 nm SiGe BiCMOS technology is also presented.