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1	Interface circuit designs for extreme environments using SiGe BiCMOS technology Finn, Steven Ernest 31 March 2008 (has links) SiGe BiCMOS technology has many advantageous properties that, when leveraged, enable circuit design for extreme environments. This work will focus on designs targeted for space system avioinics platforms under the NASA ETDP program. The program specifications include operation under temperatures ranging from -180 C to +125 C and with radiation tolerance up to total ionizing dose of 100 krad with built-in single-event latch-up tolerance. To the author's knowledge, this work presents the first design and measurement of a wide temperature range enabled, radiation tolerant as built, RS-485 wireline transceiver in SiGe BiCMOS technology. This work also includes design and testing of a charge amplification channel front-end intended to act as the interface between a piezoelectric sensor and an ADC. An additional feature is the design and testing of a 50 Ohm output buffer utilized for testing of components in a lab setting. Extreme environment electronics SiGe BiCMOS circuits Wireline transceiver Space electronics Space environment Radio--Transmitter-receivers
2	Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications Cardoso, Adilson Silva 12 January 2015 (has links) State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a wide variety of high performance and highly-integrated applications (e.g., system-on-chip (SOC), system-in-package (SiP)). Due to their bandgap-engineered base, SiGe HBTs are also naturally suited for cryogenic electronics and have the potential to replace the costly de facto technologies of choice (e.g., Gallium-Arsenide (GaAs) and Indium-Phosphide (InP)) in many cryogenic applications such as radio astronomy. This work investigates the response of mixed-signal circuits (both RF and analog circuits) when operating in extreme environments, in particular, at cryogenic temperatures and in radiation-rich environments. The ultimate goal of this work is to attempt to fill the existing gap in knowledge on the cryogenic and radiation response (both single event transients (SETs) and total ionization dose (TID)) of specific RF and analog circuit blocks (i.e., RF switches and voltage references). The design approach for different RF switch topologies and voltage references circuits are presented. Standalone Field Effect Transistors (FET) and SiGe HBTs test structures were also characterized and the results are provided to aid in the analysis and understanding of the underlying mechanisms that impact the circuits' response. Radiation mitigation strategies to counterbalance the damaging effects are investigated. A comprehensive study on the impact of cryogenic temperatures on the RF linearity of SiGe HBTs fabricated in a new 4th-generation, 90 nm SiGe BiCMOS technology is also presented. SiGe RF switches BiCMOS FET-based SOI PIN diode BiCMOS circuits Radiation hardening by design Transient response Transient radiation effects Extreme environments Mixed-signal circuits Silicon-germanium Single-pole single-throw(SPST) Single-pole four-throw(SP4T) Single-pole double-throw(SPDT) Voltage references Cryogenic temperatures Large-signal linearity Non-linearities Small-signal linearity Large-signal linearity Radiation Single event transient (SET) Total ionizing dose (TID) Radiation Precision voltage reference Bandgap reference (BGR) Bulk FET

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Interface circuit designs for extreme environments using SiGe BiCMOS technology

Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications