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Strukturelle Untersuchung der amorph/kristallinen Grenzfläche mittels quantitativer hochauflösender Transmissionselektronenmikroskopie an den Systemen a-Si/c-Si und a-Ge/c-Si / Structural investigation of the amorphous/crystalline interface by means of quantitative high-resolution transmission electron microscopy on the systems a-Si/c-Si and a-Ge/c-Si

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1. http://hdl.handle.net/11858/00-1735-0000-0006-B448-6
2. urn:nbn:de:gbv:7-webdoc-1363-5
3. webdoc-1363
4. 525690212

Identifer	oai:union.ndltd.org:uni-goettingen.de/oai:ediss.uni-goettingen.de:11858/00-1735-0000-0006-B448-6
Date	02 November 2006
Creators	Thiel, Karsten
Contributors	Seibt, Michael PD Dr.
Source Sets	Georg-August-Universität Göttingen
Language	German
Detected Language	English
Type	doctoralThesis
Format	application/pdf
Rights	http://webdoc.sub.gwdg.de/diss/copyr_diss.html