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The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements

High efficiency components are key elements of solid-state amplifiers for wireless application. We used HEMT (high-electron-mobility transistor) to obtain high mobility 2DEGs. AlGaN makes itself an attractive material for high frequency devices, and the system is particularly good for the investigation of quantum Hall effect. We studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov-de Haas (SdH) measurement. The T-dependent Hall measurement (from 4.2 K to 300K) was performed at the magnetic field 0.3T and the B-dependent Hall measurement (from 0.02T to 0.8 T) at constant temperature. From the field-dependent Hall measurements, we are able to calculate the individual mobility and carrier concentration for the two-subband-populated AlxGa1-xN/GaN heterostructures. Then, we can use T-dependent Hall effect measurement to calculate the binding energy of the deep-level trap Ed,which is a measure of the energy constant for the ionization of deep-level trap in thermal equilibrium.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0629104-152644
Date29 June 2004
CreatorsWang, Huei-Yu
ContributorsLi-wei Tu, Yan-Ten Lu, Ikai Lo
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-152644
Rightsunrestricted, Copyright information available at source archive

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