The design, simulation, and measurement of two bulk-driven down-conversion mixers with on-chip
transformer baluns in 0.18 μm CMOS is presented. Applying either the RF signal or the
local oscillator (LO) signal to the bulk connection of the transistors allows the amplification and
switching stages of a conventional mixer to be combined into a single stage, thus improving the
voltage headroom of the mixer. The addition of a transformer balun to the mixers improves the
input impedance match, provides passive voltage gain, and performs single-ended to balanced
conversion. A semi-analytical power-series analysis of the mixers is also presented. The mixer in
which the RF signal is applied to the gates of the mixing transistors achieves a measured input-referred
1-dB compression point (P1dB) of −14 dBm, an input-referred third-order intercept
point (IIP3) of −5.2 dBm, a gain of 13.6 dB, a noise figure (NF) of 26 dB, and an LO-to-RF
isolation of 50 dB. The overall performance of both mixers is found to be comparable with
other CMOS mixers, but with a higher noise figure (which can be mitigated with a high gain
low-noise amplifier (LNA)).
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:BVAU.2429/1015 |
| Date | 11 1900 |
| Creators | Van Vorst, Daryl |
| Publisher | University of British Columbia |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | English |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
Page generated in 0.0016 seconds