ABSTRACT
As MOSFET getting smaller, its silicon dioxide reaches physical limit. To continue its insulation and reasonable interface defects density, now, SiOxNy is the replace material to fill the transition term between SiO2 to high-k material. SiOxNy is made from silicon dioxide and silicon nitride in different scale. Due to the uncompleted of bonding, the device¡¦s reliability is dependent on defects. The discussion about defects will help us to change the growth conditions in process and avoid to produce these defects.
We use PL and Raman spectrum to study the defects in SiOxNy and compare them under different process conditions especially on the change of defects.
PL result on 6.2 nm film have a peak at 390 nm, and 40 nm film have peak at 535 nm. This mean that under these two process conditions the defect correspond to 3.18 eV is . The defect correspond to 2.37 eV is .
In this thesis, we report formulations of how to calculate the parameters of MOS structure, using SiON/p-Si MOS structure as calculated sample.
The carrier concentration were calculated and compared with the Hall results. The flat band voltage and threshold voltage were calculated and compared with measured C-V curves.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0616103-234345 |
| Date | 16 June 2003 |
| Creators | Chou, Shu-Ting |
| Contributors | D. J. Jang, I-Kail Lo, Li-Wei Tu, K. Y. Hsieh, Jih-Chen Chiang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616103-234345 |
| Rights | unrestricted, Copyright information available at source archive |
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