The aim of this work was to find a correlation between the electrical, optical and microstructural properties of thin SiO2 layers containing group IV nanostructures produced by ion beam synthesis. The investigations were focused on two main topics: The electrical properties of Ge- and Si-rich oxide layers were studied in order to check their suitability for non-volatile memory applications. Secondly, photo- and electroluminescence (PL and EL) results of Ge-, Si/C- and Sn-rich SiO2 layers were compared to electrical properties to get a better understanding of the luminescence mechanism.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa.de:bsz:d120-qucosa-29449 |
| Date | 31 March 2010 |
| Creators | Gebel, Thoralf |
| Contributors | Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung |
| Publisher | Forschungszentrum Dresden |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:report |
| Format | application/pdf |
| Source | Wissenschaftlich-Technische Berichte / Forschungszentrum Rossendorf; FZR-350 Juli 2002 |
| Relation | dcterms:isPartOf:Wissenschaftlich-technische Berichte ; FZR-350 |
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