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Fabrication and characterisation of a novel MOSFET gas sensor / Tillverkning och karaktärisering av en ny MOSFET-gassensor

A novel MOSFET gas sensor for the investigation has been developed. Its configuration resembles a"normally on"n-type thin-film transistor (TFT) with a gas sensitive metal oxide as a channel. The device used in the experiments only differs from common TFTs in the gate configuration. In order to allow gas reactions with the SnO2-surface, the gate is buried under the semiconducting layer. Without any gate voltage, the device works as a conventional metal oxide gas sensor. Applied gate voltages affect the channel carrier concentration and surface potential of the metal oxide, thus causing a change in sensitivity. The results of the gas measurements are in accordance with the electric adsorption effect, which was postulated by Fedor Wolkenstein 1957, and arises the possibility to operate a semiconductor gas sensor at relatively low temperatures and, thereby, be able to integrate CMOS electronics for processing of measurements at the same chip.

Identiferoai:union.ndltd.org:UPSALLA1/oai:DiVA.org:liu-1292
Date January 2002
CreatorsDalin, Johan
PublisherLinköpings universitet, Institutionen för systemteknik, Institutionen för systemteknik
Source SetsDiVA Archive at Upsalla University
LanguageEnglish
Detected LanguageEnglish
TypeStudent thesis, info:eu-repo/semantics/bachelorThesis, text
Formatapplication/pdf
Rightsinfo:eu-repo/semantics/openAccess
RelationLiTH-ISY-Ex, ; 3184

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