The aluminum oxide growth rate for aluminum protected with 2.4 nm of aluminum fluoride has been determined. We show that a 2.4 nm aluminum fluoride layer does not prevent aluminum from oxidation but does significantly retard the oxide growth – decreasing the oxide layer thickness from 1 nm in less than an hour to 0.9 nm over 116 hours. Additionally, the optical constants for aluminum oxide growing under an aluminum fluoride barrier layer have been determined – showing an increase in absorption at high energies for Al2O3 forming at room temperature as compared to highly ordered Al2O3 formed at high temperatures.
Identifer | oai:union.ndltd.org:BGMYU2/oai:scholarsarchive.byu.edu:etd-7630 |
Date | 01 December 2017 |
Creators | Miles, Margaret |
Publisher | BYU ScholarsArchive |
Source Sets | Brigham Young University |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | All Theses and Dissertations |
Rights | http://lib.byu.edu/about/copyright/ |
Page generated in 0.0014 seconds