<p>In this thesis, three different types of low-noise amplifiers (LNA’s) have been designed using a 0.25 mm SiGe BiCMOS process. Firstly, a single-stage amplifier has been designed with 11 dB gain and 3.7 dB noise figure at 8 GHz. Secondly, a cascode two-stage LNA with 16 dB gain and 3.8 dB noise figure at 8 GHz is also described. Finally, a cascade two-stage LNA with a wide-band RF performance (a gain larger than unity between 2-17 GHz and a noise figure below 5 dB between 1.7 GHz and 12 GHz) is presented. </p><p>These SiGe BiCMOS LNA’s could for example be used in the microwave receivers modules of advanced phased array antennas, potentially making those more cost- effective and also more compact in size in the future. </p><p>All LNA designs presented in this report have been implemented with circuit layouts and validated through simulations using Cadence RF Spectre.</p>
| Identifer | oai:union.ndltd.org:UPSALLA/oai:DiVA.org:liu-1530 |
| Date | January 2003 |
| Creators | Hansson, Martin |
| Publisher | Linköping University, Department of Electrical Engineering, Institutionen för systemteknik |
| Source Sets | DiVA Archive at Upsalla University |
| Language | English |
| Detected Language | English |
| Type | Student thesis, text |
| Relation | LiTH-ISY-Ex, ; 3347 |
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