Return to search

Characterization and Modeling of Chemical-Mechanical Polishing for Polysilicon Microstructures

Long the dominant method of wafer planarization in the integrated circuit (IC) industry, chemical-mechanical polishing is starting to play an important role in microelectromechnical systems (MEMS). We present an experiment to characterize a polysilicon CMP process with the specific goal of examining MEMS sized test structures. We utilize previously discussed models and examine whether the same assumptions from IC CMP can be made for MEMS CMP. We find that CMP at the MEMS scale is not just pattern density dependent, but also partly dependent on feature size. Also, we find that new layout designs relevant to MEMS can negatively impact how well existing CMP models simulate polishing, motivating the need for further model development. / Singapore-MIT Alliance (SMA)

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3901
Date01 1900
CreatorsTang, Brian D., Boning, Duane S.
Source SetsM.I.T. Theses and Dissertation
Languageen_US
Detected LanguageEnglish
TypeArticle
Format247912 bytes, application/pdf
RelationInnovation in Manufacturing Systems and Technology (IMST);

Page generated in 0.0017 seconds