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Evaluation of e-beam SiO2 for MIM application

A metal-insulator-metal (MIM) device is used to rectify high frequency radiation received through an antenna coupled to it. In this study, a Ta-SiO2-Ta MIM device was fabricated and characterized. SiO2 layers with different thicknesses of 2nm, 5nm and 8nm were deposited and evaluated both electrically and optically. Tantalum was deposited using a sputtering system, while the oxide was evaporated using an E-beam evaporator. A Keithley 4200-SCS system combined with a four-probe station was adopted to measure both current-voltage and capacitance-voltage (C-V) characteristics. The I-V curves for all MIM devices were almost linear except the one with 8nm of SiO2 exhibited some nonlinearity. The C-V measurement that was carried out at AC frequency showed changing resistance for all samples and the resistance decreased as the thickness decreased. However, the E-beam SiO2 was found not to be a desirable oxide for MIM application due to the existence of many defects. / Materials Engineering

Identiferoai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:AEU.10048/1098
Date06 1900
CreatorsGuo, Wei
ContributorsKen Cadien (Chemical and Materials Engineering), David Mitlin (Chemical and Materials Engineering), Mani Vaidyanathan (Electrical and Computer Engineering)
Source SetsLibrary and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada
Languageen_US
Detected LanguageEnglish
TypeThesis
Format1662000 bytes, application/pdf

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