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A metal-insulator-metal (MIM) device is used to rectify high frequency radiation received through an antenna coupled to it. In this study, a Ta-SiO2-Ta MIM device was fabricated and characterized. SiO2 layers with different thicknesses of 2nm, 5nm and 8nm were deposited and evaluated both electrically and optically. Tantalum was deposited using a sputtering system, while the oxide was evaporated using an E-beam evaporator. A Keithley 4200-SCS system combined with a four-probe station was adopted to measure both current-voltage and capacitance-voltage (C-V) characteristics. The I-V curves for all MIM devices were almost linear except the one with 8nm of SiO2 exhibited some nonlinearity. The C-V measurement that was carried out at AC frequency showed changing resistance for all samples and the resistance decreased as the thickness decreased. However, the E-beam SiO2 was found not to be a desirable oxide for MIM application due to the existence of many defects. / Materials Engineering

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The focus of this thesis is on radio frequency magnetron sputtered aluminum oxide thin films developed for use as the gate dielectric for organic thin film transistors. The effect of top metal electrodes on the electrical characteristics of aluminum oxide metal-insulator-metal capacitors has been studied to determine an optimum material combination for minimizing the leakage current, while maximizing the breakdown field. The leakage current and breakdown characteristics were observed to have a strong dependence on the top electrode material. Devices with Al top electrodes exhibited significantly higher breakdown voltages compared to devices with Au, Ni, Cu and Ag electrodes. Introducing an Al diffusion barrier dramatically increased the breakdown field and reduced the leakage current for capacitors with Ag, Au and Cu top electrodes. The electrical characteristics were found to relate well to material properties, of the contacting metals, such as ionization potential and diffusion coefficient.

The focus of this thesis is on radio frequency magnetron sputtered aluminum oxide thin films developed for use as the gate dielectric for organic thin film transistors. The effect of top metal electrodes on the electrical characteristics of aluminum oxide metal-insulator-metal capacitors has been studied to determine an optimum material combination for minimizing the leakage current, while maximizing the breakdown field. The leakage current and breakdown characteristics were observed to have a strong dependence on the top electrode material. Devices with Al top electrodes exhibited significantly higher breakdown voltages compared to devices with Au, Ni, Cu and Ag electrodes. Introducing an Al diffusion barrier dramatically increased the breakdown field and reduced the leakage current for capacitors with Ag, Au and Cu top electrodes. The electrical characteristics were found to relate well to material properties, of the contacting metals, such as ionization potential and diffusion coefficient.

Orientador: Iakov Veniaminovitch Kopelecith / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-11T19:04:32Z (GMT). No. of bitstreams: 1 Baring_LuisAugustoGomes_M.pdf: 14567195 bytes, checksum: 7a1e5edce6c8f77169b6643a7a7f0e21 (MD5) Previous issue date: 2008 / Resumo: No presente trabalho, estudamos as propriedades físicas de amostras de bismuto, material que, quando na forma romboédrica, não é supercondutor, mas que pode apresentar supercondutividade quando na forma de filmes ou quando se apresenta em outra estrutura (cúbica, por exemplo), obtida sob pressão, ou, ainda, em sua forma amorfa. Observamos supercondutividade em um pó virgem de bismuto e em amostras preparadas a partir desse pó, mediante tratamento térmico. Dada a pequena fração volumétrica a que corresponde a fase supercondutora acreditamos que a supercondutividade ocorra em uma fração das amostras possivelmente relacionada à sua superfície. Mais interessante é que a supercondutividade é fortemente dependente das condições de tratamento térmico (as amostras preparadas a partir do pó de bismuto virgem podem apresentar supercondutividade ou não). Também realizamos medidas de magnetotransporte em uma amostra monocristalina de bismuto, confirmando certas observações já a feitas anteriormente, como a ocorrência de uma transição metal-isolante induzida por campo magnético / Abstract: In this work we study the physical properties of bismuth samples. Crystalline bulk bismuth, in the rhombohedral phase, is not superconducting, but, in the cubic phase, for example (obtained under pressure), in films and in the amorphous phase, may present superconducting transition. We observed superconductivity in a bismuth virgin powder and in samples prepared upon annealing this powder. Due to the small volumetric superconducting fraction we suspect that the superconductivity is related to the sample's surface. Moreover, the superconducting properties are strongly dependent upon the annealing conditions (these samples may be either superconducting or not). We also performed magnetotransport measurements in a single-crystalline bismuth sample and observed a characteristic feature of this material, namely, metal-insulator transition driven by applied magnetic field / Mestrado / Física da Matéria Condensada / Mestre em Física

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This thesis presents the design and fabrication of coplanar waveguide to microstrip transitions and planar spiral inductors, and the design of metal-insulator-metal capacitors, a planar band-pass, and a low-pass filter structures as an application for the inductors and capacitors using the RF MEMS technology. This thesis also includes a packaging method for RF MEMS devices with the use of benzocyclobutene as bonding material. The transition structures are formed by four different methods between coplanar waveguide end and microstrip end, and they are analyzed in 1-20 GHz. Very low loss transitions are obtained by maintaining constant characteristic impedance which is the same as the port impedance through the transition structures. The planar inductors are formed by square microstrip spirals on a glass substrate. Using the self-inductance propery of a conductive strip and the mutual inductance between two conductor strips in a proper arrangement, the inductance value of each structure is defined. Inductors from 0.7 nH up to 20 nH have been designed and fabricated. The metal-insulator-metal capacitors are formed by two coplanar waveguide structures. In the intersection, one end of a coplanar waveguide is placed on top of the end of the other coplanar waveguide with a dielectric layer in between. Using the theory of parallel plate capacitors, the capacitance of each structure is adjusted by the dimensions of the coplanar waveguides, which obviously adjust the area of intersection. Capacitors from 0.3 pF up to 9.8 pF have been designed. A low-pass filter and a band-pass filter are designed using the capacitors and inductors developed in this thesis. In addition to lumped elements, the interconnecting transmission lines, junctions and input-output lines are added to filter topologies. The RF MEMS packaging is realized on a coplanar waveguide structure which stands on a silicon wafer and encapsulated by a silicon wafer. The capping chip stands on the BCB outer ring which promotes adhesion and provides semi hermeticity. Keywords: Transition between transmission lines, planar spiral inductor, metal-insulator-metal capacitor, RF MEMS packaging, surface micromachining.

Detectors and sensors are an integral part of modern electronics and are crucial to highly sensitive applications. Metal-Insulator-Metal (MIM) tunnel junctions have been explored for the past five decades and are still being investigated due to its wide use of applications such as mixers, capacitors, detectors, rectifiers and energy conversion devices. In this research, various designs of thin film based tunnel junctions have been investigated and the optimum one picked for the purpose of a wide band detector up to 10GHz based on their sensitivities. A modified design with an isolation layer incorporating a self-aligning method to increase fabrication throughput was developed. A mask for the reliability testing of multiple devices with different areas was also developed. Nickel Oxide based insulators with different stoichiometries have been incorporated in the fabrication of the device to identify which stoichiometry gives the best performance for high frequency applications. Nickel Oxide (NiO), Zinc Oxide (ZnO) and the combination of the two have been deposited using reactive sputtering and investigated as insulator materials. The bilayer devices showed increased sensitivities at lower turn on voltages and very good efficiencies at 100MHz and 1GHz. Although, the MIM device provides a simple structure, some of the critical parameters required to quantify the device functionality are still being explored. Based on the parameters, a criterion was developed to help engineer a tunnel device for a desired detectivity.

Metal-insulator-metal (MIM) capacitors are used for analog, RF, and DRAM applications in ICs. The International Technology Roadmap for Semiconductors (ITRS) specifies continuing increase in capacitance density (> 7 fF/ m2), lower leakage current density (< 10 8 A/cm2), very low effective oxide thickness (EOT < 1 nm, for DRAM applications), and better capacitance density-voltage (C-V) linearity ( < 100 ppm/V2, for analog/RF applications). In addition, the maximum fabrication/processing temper-ature should not be greater than 400 0C, in order to be compatible with the thermal budget of back-end fabrication steps. Low dielectric constants of conventional SiO2 and Si3N4 capacitors limit the capacitance densities of these devices. Although scaling down of dielectric thickness increases the capacitance density, it results in large leakage current density and poor C-V linearity. In this work, the effects of high-k materials (Eu2O3, Gd2O3, TiO2) on the device performance of MIM capacitors are studied. The performance of multi-dielectric stack, and doped-dielectric stack devices are also investigated. The effects of anneal temperature, anneal ambient, anneal mode, and dielectric thickness on device performance are evaluated. C-V, current density-voltage (J-V), and reliability measurements are performed to benchmark the electrical performance, and this is correlated to the structural and material properties of the films through ellipsometry, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) measurements. High-performance MIM capacitors are fabricated by using (RF sputtered) Eu2O3 dielectric. The fabricated devices are subjected to different anneal conditions, to study their device performance. Forming gas (FG) and argon (Ar) annealed devices are shown to have higher capacitance densities (7 fF/ m2jF G), lower leakage current densities (3.2 10 8 A/cm2jAr at -1 V), and higher , compared to oxygen (O2) annealed de-vices ( 100kHz = 193 ppm/V2jO2). The electrical characterization results are correlated with the surface chemical states of the films through XPS measurements. The annealing ambient is shown to alter the surface chemical states, which, in turn, modulate the electrical characteristics. High-density MIM capacitors are fabricated by using (RF sputtered) Gd2O3, and Gd2O3-Eu2O3 stacked dielectrics. The fabricated Gd2O3 capacitors are also subjected to different anneal conditions, to study their device performance. Although Gd2O3 capacitors provide high capacitance density (15 fF/ m2), they suffer from high leakage current density, high , and poor reliability. Therefore, stacked dielectrics of Gd2O3 and Eu2O3 (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) are fabricated to reduce leakage current density, improve , and improve reliability, with only a marginal reduction in capacitance density, compared to Gd2O3 capacitors. Density of defects and barrier/trap heights are extracted for the fabricated capacitors, and correlated with the device characteristics. High-performance MIM capacitors with bilayer dielectric stacks of (ALD-deposited) TiO2-ZrO2, and Si-doped ZrO2 are characterized. Devices with (ALD-deposited) TiO2/ ZrO2/TiO2 (TZT) and AlO-doped TZT stacks are also characterized. The influence of doping on the device performance is studied. The surface chemical states of the deposited films are analyzed by high-resolution XPS. The structural analysis of the samples is performed by XRD measurements, and this is correlated to the electrical characteristics of the devices. Reliability measurements are performed to study the effects of constant voltage and current stress on device performance. High capacitance density (> 45 fF/ m2), low leakage current density (< 5 10 8 A/cm2 at -1 V, for most devices), and sub-nm EOT are achieved. These parameters exceed the ITRS specifications for DRAM storage capacitors.