The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance. Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters.

Integration of high-K Metal-Insulator-Metal (MIM) capacitors in the Back-end-of-line (BEOL) is a topic of interest for the further development of the process at KTH Royal Institute of Technology. MIM-capacitors benefit from having constant capacitance values over a range of voltages and/or frequencies. One significant limitation in the development of better MIM-capacitors is the temperature consideration for BEOL processes. For the process at KTH Institute of Technology the temperature should not exceed 600 °C, as this would damage underlying devices. This work aims to fabricate aluminium oxide MIM-capacitors as a standard BEOL process performed at low temperature, which has been achieved via atomic layer deposition (ALD). The fabricated aluminium oxide MIM-capacitors had a good quality factor, series resistance and low dissipation. The capacitance for a 10 nm thick aluminium oxide insulator layer was 1 µF/cm2, which exceeds the set requirement. This work also aimed to make ferroelectric aluminium doped hafnium oxide MIM-capacitors using ALD. The doping ratio was varied in ALD as this had been found to affect formation of the ferroelectric crystal phase after a rapid thermal annealing step. Three wafers of 20 nm thick hafnium oxide and differing ratios were found to not be ferroelectric. The intermediate doping ratio was found to appear slightly anti-ferroelectric. A 10 nm thick doped hafnium oxide of intermediate doping was also fabricated and was found to be ferroelectric with a remnant polarisation of 1 µC/cm2. Though this polarisation is relatively small, it shows that top electrode induced strain due to lattice mismatch could be responsible for the ferroelectric properties of the capacitor. The quality of the hafnium based capacitors seemed worse in comparison to the aluminium oxide capacitors, which is suspected to be due to oxygen vacancies, resulting in a high loss tangent. While this first experiment showed promising results, the ferroelectric remnant polarisation should be increased by an order of magnitude and the electrical benchmark values should be improved before these hafnium oxide MIM-capacitors can be used in the BEOL process. / Integratie van high-K MIM-condensatoren in de Back-end-of-line (BEOL) is een onderwerp van belang voor de ontwikkeling van het proces bij de KTH. MIM-condensatoren profiteren van een constante capaciteitswaarde over een reeks spanningen en/of frequenties. Een belangrijke beperking bij de ontwikkeling van betere MIM-condensatoren is het temperatuur limiet voor BEOL-processen. Bij de KTH moet de temperatuur niet hoger zijn dan 600 °C, omdat dit de onderliggende apparaten zou beschadigen. Dit werk heeft tot doel aluminiumoxide MIM-condensatoren te fabriceren als een standaard BEOL-proces met lage temperatuur, en heeft dit inderdaad bereikt via atomaire laagafzetting (ALD). De gefabriceerde aluminiumoxide MIM-condensatoren hadden een goede kwaliteitsfactor, serieweerstand en lage dissipatie. De capaciteit voor een 10 nm dikke aluminiumoxide-isolatorlaag was 1µF/cm2, hoger dan de gestelde eisen. Dit werk was ook gericht op het maken van ferro-elektrische aluminium gedoteerde hafniumoxide MIM-condensatoren met behulp van ALD. De doteringsverhouding werd gevarieerd in ALD, aangezien bleek dat dit de vorming van de ferro-elektrische kristalfase faciliteerde na een snelle thermische gloeistap. Drie wafers van 20 nm dik hafniumoxide en verschillende verhoudingen bleken niet ferro-elektrisch te zijn. De tussenliggende doteringsverhouding bleek enigszins anti-ferro-elektrisch te zijn. Een 10 nm dik gedoteerd hafniumoxide met intermediaire dotering werd ook gefabriceerd en bleek ferro-elektrisch te zijn met een restpolarisatie van 1 µC/cm2. Hoewel deze polarisatie relatief klein is, toont het aan dat de door de topelektrode geïnduceerde spanning als gevolg van roostermismatch verantwoordelijk zou kunnen zijn voor de ferro-elektrische eigenschappen van de condensator. De kwaliteit van de op hafnium gebaseerde isolator leek slechter in vergelijking met die van aluminiumoxide, hetgeen kan worden toegeschreven aan gebrek van zuurstof in het rooster, wat in een groot verlies resulteert. De ferro-elektriciteit moet met een orde van grootte worden verhoogd en de elektrische benchmarks moeten ook verhoogd worden voordat deze hafniumoxide MIM-condensatoren kunnen worden gebruikt in het BEOLproces. Sleutelwoorden: atomaire laagafzetting (ALD), Ferro-elektrisch, Metaal-Isolator- Metaal (MIM) condensator, lage temperatuur, snelle thermische gloeiing.

Phase Shifters are one of the most important building cells of the applications in microwave and millimeter-wave range, especially for communications and radar applications / to steer the main beam for electronic scanning. This thesis includes all of the stages starting from the theoretical design stage to the measurements of the phase shifters. In detail, all-pass network phase shifter configuration is used to achieve broadband and ultra wide-band differential phase characteristics. For these reasons, 1 to 2 GHz, 2 to 4 GHz, and 3 to 6 GHz 4-bit, 22.5&deg / phase resolution phase shifter realization with surface micromachined lumped components are designed, simulated, fabricated and measured. Basic building blocks of the phase shifters, i.e., surface micromachined lumped components, square planar spiral inductors and Metal-Insulator-Metal capacitors are designed with EM simulation and lumped equivalent model extractions. The validation of the designed square planar spiral inductors is done with fabrication and measurement steps, very low error, below 1%, between the designs and fabricated samples are observed. Using this knowledge on lumped elements finally phase shifters are designed with surface micromachined lumped components, fabricated using an in house technology provided by METU-MEMS facilities, RF MEMS group. Low phase rms error, good return and insertion loss considerations are aimed, and achieved. In addition to the main work of this thesis, a generalized theoretical calculation method for 2n-1 number of stages all-pass network phase shifters is presented for the first time in literature. A different, new, broadband, and combined phase shifter topology using two-stage all-pass filters is presented. Moreover, the implementation of this idea is proved to be practical to 3 to 6 GHz 5.625&deg / and 11.25&deg / combined phase shifter. A new approach for stage numbers other than power of 2 is indicated, which is different from what is already presented in the literature. An example practical implementation results are provided for the three-stage 4-bit 1 to 6 GHz phase shifter. Also, a small improvement in SRF of the high inductance valued inductors is achieved with the mitering of the corners of square planar spiral inductors. Comparison of the measured data between the normal inductors and mitered versions shows that the first SRF of the inductors are increased about 80 MHz, and second SRF of the inductors are increased about 200 MHz.

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L'augmentation de l'interaction lumière-matière aux échelles micro et nanométriques est un des fers de lance de la nanophotonique. En effet, le contrôle de la répartition spatiale de la lumière grâce à l'interaction résonante entre nanostructures et ondes électromagnétiques a conduit aux développements de nombreuses applications dans des domaines variés tels que les télécommunications,la spectroscopie et la détection d'objets. Le ralentissement de la lumière, sujet de la thèse, obtenue grâces à l'interférence d'ondes contre-propageantes dans des milieux périodiques ou le confinement sub-longueur d'onde dans des guides d'ondes plasmoniques, est associé à une compression des pulses lumineux et une forte augmentation du champ électrique, deux phénomènes clés pour la miniaturisation de composées optiques et l'augmentation de l'interaction lumière matière. / Enhancing light-matter interactions at micro and nanoscales is one of the spearheads of nanophotonics. Indeed, the control of the field distribution due to the resonant interaction of nanostructures with electromagnetic waves has prompted the development of numerous optical components for many applications in telecommunication, spectroscopy or sensing. A promising approach lies in the control of light speed in nanostructures. Light slowdown, obtained by wave interferences in periodic structures or subwavelength confinement in plasmonic waveguides, is associated to pulse compressions and large field enhancements,which are envisioned as key processes for the miniaturization of optical devices and the enhancement of light-matter interactions.The thesis studies both fundamental aspects and possible applications related to slow light in photonic and plasmonic nanostructures. In particular, we study the impact of periodic system sizes on the group velocity reduction and propose a novelfamily of resonators that implement slow light on very small spatial scales. We then investigate the role of fabrication disorder in slow periodic waveguides on light localization and demonstrate how modal properties influence the confinement of localized modes. Also we propose a new hollow-core photonic crystal waveguide that provides efficient and remote couplings between the waveguide and atoms thatare trapped away from it. Finally we demonstrate the important role played by slow plasmons on the emission of quantum emitters placed in nanogap plasmonic antennas and explain how large radiation efficiency can be achieved by overcoming quenching in the metal. Additionally, one part of the thesis is devoted to thederivation of a novel modal method to accurately describe the dynamics of plasmonic resonators under short pulse illumination.

Plasmonic properties and the related novel applications are studied on various types of metallic nano-structures in one, two, or three dimensions. For 1D nanostructure, the motion of free electrons in a metal-film with nanoscale thickness is confined in its normal dimension and free in the other two. Describing the free-electron motion at metal-dielectric surfaces, surface plasmon polariton (SPP) is an elementary excitation of such motions and is well known. When further perforated with periodic array of holes, periodicity will introduce degeneracy, incur energy-level splitting, and facilitate the coupling between free-space photon and SPP. We applied this concept to achieve a plasmonic perfect absorber. The experimentally observed reflection dip splitting is qualitatively explained by a perturbation theory based on the above concept. If confined in 2D, the nanostructures become nanowires that intrigue a broad range of research interests. We performed various studies on the resonance and propagation of metal nanowires with different materials, cross-sectional shapes and form factors, in passive or active medium, in support of corresponding experimental works. Finite- Difference Time-Domain (FDTD) simulations show that simulated results agrees well with experiments and makes fundamental mode analysis possible. Confined in 3D, the electron motions in a single metal nanoparticle (NP) leads to localized surface plasmon resonance (LSPR) that enables another novel and important application: plasmon-heating. By exciting the LSPR of a gold particle embedded in liquid, the excited plasmon will decay into heat in the particle and will heat up the surrounding liquid eventually. With sufficient exciting optical intensity, the heat transfer from NP to liquid will undergo an explosive process and make a vapor envelop: nanobubble. We characterized the size, pressure and temperature of the nanobubble by a simple model relying on Mie calculations and continuous medium assumption. A novel effective medium method is also developed to replace the role of Mie calculations. The characterized temperature is in excellent agreement with that by Raman scattering. If fabricated in an ordered cluster, NPs exhibit double-resonance features and the double Fano-resonant structure is demonstrated to most enhance the four-wave mixing efficiency.

In dieser Arbeit setzen wir ab-initio-Methoden zur Untersuchung einiger Oberflächensysteme und eines Bulksystems ein. Im Wesentlichen greifen wir hierbei auf die Dichtefunktionaltheorie (DFT) und die GW-Approximation (GWA) im Rahmen der Vielteilchenstörungstheorie zurück. Wir nutzen diese Methoden um die Adsorption von TMA auf der Rutil TiO2-Oberfläche zu untersuchen, optische Spektren von TiO2 zu berechnen und um die Adsorption von [7]-HCA auf der Calcit(10-14)-Oberfläche zu verstehen. Weiterhin beschäftigen wir uns intensiv mit PTCDA auf Ag(111), welches mit einer chemisch kontaktierten STM-Spitze manipuliert wird.